Patents by Inventor Noriyuki Homma

Noriyuki Homma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200374510
    Abstract: A method, apparatus and system for enhanced welding visualization include splitting incoming light from the welding environment into at least a first optical path and a second optical path having different light levels using at least one beam splitter. Images of the split light having different light levels are captured using a respective imaging sensor. The images from the respective imaging sensors are fused to create a left-eye fused image and a right-eye fused image. The left-eye fused image is displayed on a display at a location of a left eye of a user and the right-eye fused image is displayed on a display at a location of a right eye of the user to provide a parallax-free, high dynamic range, representation of the welding environment.
    Type: Application
    Filed: May 23, 2019
    Publication date: November 26, 2020
    Inventors: David Berends, Naohiko Fuse, Atsushi Homma, Noriyuki Kanehira, Tadahisa Tsuyama, Michael Piacentino, Gooitzen van der Wal, Chiharu Yamaoka, David Zhang
  • Patent number: 7123534
    Abstract: A semiconductor memory device in which memory cells are arranged at intersections between the word lines and the bit lines includes a control unit for selecting, in a second half of a cycle in which a first word line is selected from the word lines to conduct a read or write operation for a first memory cell coupled with the first word line, a second word line other than the first word line and refreshing memory cells corresponding to the second word line. The memory cell includes an amplifier section including two driver transistors of which gate and drain electrodes are respectively cross-coupled with each other and a switch section including selector transistors coupling the amplifier section with the bit lines according to a selection signal on the bit line. Either one of each transistor and each selector transistor is an n-channel transistor or a p-type transistor.
    Type: Grant
    Filed: September 20, 2004
    Date of Patent: October 17, 2006
    Assignee: Renesas Technology Corp.
    Inventors: Hiroaki Nambu, Noriyuki Homma
  • Publication number: 20050063238
    Abstract: A semiconductor memory device in which memory cells are arranged at intersections between the word lines and the bit lines includes a control unit for selecting, in a second half of a cycle in which a first word line is selected from the word lines to conduct a read or write operation for a first memory cell coupled with the first word line, a second word line other than the first word line and refreshing memory cells corresponding to the second word line. The memory cell includes an amplifier section including two driver transistors of which gate and drain electrodes are respectively cross-coupled with each other and a switch section including selector transistors coupling the amplifier section with the bit lines according to a selection signal on the bit line. Either one of each transistor and each selector transistor is an n-channel transistor or a p-type transistor.
    Type: Application
    Filed: September 20, 2004
    Publication date: March 24, 2005
    Inventors: Hiroaki Nambu, Noriyuki Homma
  • Patent number: 6864559
    Abstract: Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements.
    Type: Grant
    Filed: March 4, 2003
    Date of Patent: March 8, 2005
    Assignee: Renesas Technology Corp.
    Inventors: Shinji Nakazato, Hideaki Uchida, Yoshikazu Saito, Masahiro Yamamura, Yutaka Kobayashi, Takahide Ikeda, Ryoichi Hori, Goro Kitsukawa, Kiyoo Itoh, Nobuo Tanba, Takao Watanabe, Katsuhiro Shimohigashi, Noriyuki Homma
  • Patent number: 6740958
    Abstract: Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements.
    Type: Grant
    Filed: April 4, 2002
    Date of Patent: May 25, 2004
    Assignee: Renesas Technology Corp.
    Inventors: Shinji Nakazato, Hideaki Uchida, Yoshikazu Saito, Masahiro Yamamura, Yutaka Kobayashi, Takahide Ikeda, Ryoichi Hori, Goro Kitsukawa, Kiyoo Itoh, Nobuo Tanba, Takao Watanabe, Katsuhiro Shimohigashi, Noriyuki Homma
  • Publication number: 20030178699
    Abstract: Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements.
    Type: Application
    Filed: March 4, 2003
    Publication date: September 25, 2003
    Inventors: Shinji Nakazato, Hideaki Uchida, Yoshikazu Saito, Masahiro Yamamura, Yutaka Kobayashi, Takahide Ikeda, Ryoichi Hori, Goro Kitsukawa, Kiyoo Itoh, Nobuo Tanba, Takao Watanabe, Katsuhiro Shimohigashi, Noriyuki Homma
  • Publication number: 20020153591
    Abstract: Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements.
    Type: Application
    Filed: April 4, 2002
    Publication date: October 24, 2002
    Inventors: Shinji Nakazato, Hideaki Uchida, Yoshikazu Saito, Masahiro Yamamura, Yutaka Kobayashi, Takahide Ikeda, Ryoichi Hori, Goro Kitsukawa, Kiyoo Itoh, Nobuo Tanba, Takao Watanabe, Katsuhiro Shimohigashi, Noriyuki Homma
  • Patent number: 6208010
    Abstract: Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements.
    Type: Grant
    Filed: December 18, 1995
    Date of Patent: March 27, 2001
    Assignee: Hitachi, Ltd.
    Inventors: Shinji Nakazato, Hideaki Uchida, Yoshikazu Saito, Masahiro Yamamura, Yutaka Kobayashi, Takahide Ikeda, Ryoichi Hori, Goro Kitsukawa, Kiyoo Itoh, Nobuo Tanba, Takao Watanabe, Katsuhiro Shimohigashi, Noriyuki Homma
  • Patent number: 5497023
    Abstract: Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements.
    Type: Grant
    Filed: December 8, 1994
    Date of Patent: March 5, 1996
    Assignee: Hitachi, Ltd.
    Inventors: Shinji Nakazato, Hideaki Uchida, Yoshikasu Saito, Masahiro Yamamura, Yutaka Kobayashi, Takahide Ikeda, Ryoichi Hori, Goro Kitsukawa, Kiyoo Itoh, Nobuo Tanba, Takao Watanabe, Katsuhiro Shimohigashi, Noriyuki Homma
  • Patent number: 5448527
    Abstract: A decoder formed of multiple circuit blocks each including bipolar transistors Q1 and Q2 having their collectors connected to resistors R1 and R2, respectively, a bipolar transistor Q3 having its collector supplied with a power voltage, and a current source I1 connected commonly to the emitters of Q1-Q3. This circuit configuration permits the decoder and BiCMOS memories using it to operate with a low supply voltage.
    Type: Grant
    Filed: November 10, 1993
    Date of Patent: September 5, 1995
    Assignees: Hitachi, Ltd., Hitachi Device Engineering Co., Ltd.
    Inventors: Hiroaki Nambu, Noriyuki Homma, Kazuo Kanetani, Youji Idei, Kenichi Ohhata, Takesi Kusunoki
  • Patent number: 5398201
    Abstract: A circuit technique suitable to attain a high speed of a memory which is constructed in a manner such that memory cells include a field effect transistor and peripheral circuits include a bipolar transistor and a field effect transistor. According to the invention, a bipolar transistor whose collector is connected to a differential amplifier and which supplies a current to the differential amplifier in accordance with a signal which is inputted to a base or an emitter is added, and a bipolar transistor to supply a current only when writing to bit lines is connected. According to the invention, a high speed of the access time when information is read out by switching the selection bit line is accomplished. Further, the charge/discharge time of the bit line when information is written is reduced and a high speed of the writing time can be also accomplished.
    Type: Grant
    Filed: April 28, 1993
    Date of Patent: March 14, 1995
    Assignees: Hitachi, Ltd., Hitachi Device Engineering Co., Ltd.
    Inventors: Hiroaki Nambu, Noriyuki Homma, Kunihiko Yamaguchi, Hisayuki Higuchi, Kazuo Kanetani, Youji Idei, Ken'ichi Ohata, Yoshiaki Sakurai, Masanori Odaka, Goro Kitsukawa
  • Patent number: 5386135
    Abstract: Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements.
    Type: Grant
    Filed: April 12, 1994
    Date of Patent: January 31, 1995
    Assignee: Hitachi, Ltd.
    Inventors: Shinji Nakazato, Hideaki Uchida, Yoshikazu Saito, Masahiro Yamamura, Yutaka Kobayashi, Takahide Ikeda, Ryoichi Hori, Goro Kitsukawa, Kiyoo Itoh, Nobuo Tanba, Takao Watanabe, Katsuhiro Shimohigashi, Noriyuki Homma
  • Patent number: 5324982
    Abstract: Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements.
    Type: Grant
    Filed: October 2, 1991
    Date of Patent: June 28, 1994
    Assignee: Hitachi, Ltd.
    Inventors: Shinji Nakazato, Hideaki Uchida, Yoshikazu Saito, Masahiro Yamamura, Yutaka Kobayashi, Takahide Ikeda, Ryoichi Hori, Goro Kitsukawa, Kiyoo Itoh, Nobuo Tanba, Takao Watanabe, Katsuhiro Shimohigashi, Noriyuki Homma
  • Patent number: 5255225
    Abstract: A semiconductor integrated circuit device including a level conversion circuit in which the simplifying of the circuit and the increasing of the speed of operation have been attained is provided.A pair of complementary output signals amplified to a required signal level by a current switch circuit including differential transistors which receive an input signal and a reference voltage are inputted into a pair of emitter follower circuits. An emitter follower output transistor is driven by an output signal from one emitter follower circuit, while an N-channel MOSFET provided between the output transistor and a current source used as a load is driven by an output signal from the other emitter follower circuit, to obtain a level-amplified output signal from an emitter of the output transistor.
    Type: Grant
    Filed: March 4, 1992
    Date of Patent: October 19, 1993
    Assignees: Hitachi, Ltd., Hitachi Device Engineering Co., Ltd.
    Inventors: Hiroaki Nambu, Noriyuki Homma, Kunihiko Yamaguchi, Kazuo Kanetani, Hisayuki Higuchi, Youji Idei, Kenichi Ohata, Yoshiaki Sakurai, Masanori Odaka, Goro Kitsukawa, Nobuo Tamba, Masayuki Ohayashi, Toshiro Hiramoto, Kayoko Saito
  • Patent number: 5163022
    Abstract: The disclosure includes feeding a current I.sub.R to only BIT lines selected, or feeding current I.sub.R transiently to only the BIT lines switched from unselected to selected states; and a sense amplifier for detecting the difference between the currents flowing in selected BIT lines to read out stored information, wherein current I.sub.R and cell current I.sub.cell have a relation of I.sub.R >I.sub.cell. The BiC MOS memory has high speed, low power and high integration density. Diodes are provided between the memory cell and the BIT lines.
    Type: Grant
    Filed: January 30, 1992
    Date of Patent: November 10, 1992
    Assignees: Hitachi, Ltd., Hitachi Device Engineering Co., Ltd.
    Inventors: Noriyuki Homma, Hiroaki Nambu, Kunihiko Yamaguchi, Tohru Nakamura, Youji Idei, Kazuo Kanetani, Kenichi Ohhata, Yoshiaki Sakurai, Hisayuki Higuchi
  • Patent number: 5148255
    Abstract: Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements.
    Type: Grant
    Filed: January 23, 1991
    Date of Patent: September 15, 1992
    Assignee: Hitachi, Ltd.
    Inventors: Shinji Nakazato, Hideaki Uchida, Yoshikazu Saito, Masahiro Yamamura, Yutaka Kobayashi, Takahide Ikeda, Ryoichi Hori, Goro Kitsukawa, Kiyoo Itoh, Nobuo Tanba, Takao Watanabe, Katsuhiro Shimohigashi, Noriyuki Homma
  • Patent number: 5086414
    Abstract: A semiconductor circuit having a plurality of circuit blocks, each having latch circuits each one thereof being controlled by an internally provided clock signal for preventing malfunction of the circuit. Each circuit is provided with the latch function so that the cycle time is made shorter than the access time. Moreover, the latch means are driven in such a manner that the adjoining ones are prevented from being put to through-state simultaneously, whereby malfunction is prevented.
    Type: Grant
    Filed: November 15, 1989
    Date of Patent: February 4, 1992
    Assignees: Hitachi, Ltd., Hitachi Device Engineering Co., Ltd.
    Inventors: Hiroaki Nambu, Noriyuki Homma, Kunihiko Yamaguchi, Kazuo Kanetani, Youji Idei, Kenichi Ohhata, Yoshiaki Sakurai, Jun Etoh
  • Patent number: 4986666
    Abstract: A semiconductor memory device capable of operating at high speeds, and a sense circuit and a decoder circuit that can be suitably used for the memory device. A latch function is imparted to at least either one of the decoder circuit or the sense circuit in the semiconductor memory device.
    Type: Grant
    Filed: November 29, 1988
    Date of Patent: January 22, 1991
    Assignees: Hitachi Device Engineering Co., Ltd., Hitachi Ltd.
    Inventors: Noriyuki Homma, Hisayuki Higuchi, Yoji Idei, Hiroaki Nambu, Yoshiaki Sakurai
  • Patent number: 4958320
    Abstract: A bipolar memory of a construction having high immunity to soft error attributable to alpha rays is provided. The transistors of a flip flop, i.e., the essential circuitry of the memory cell, are inverted and the load device thereof has shielding means for shielding the flip flop from the noise produced within the substrate. Bipolar transistors and Schottky barrier diodes are employed as the load devices. A buried layer (ordinarily, an n type layer) and a doped layer of the reverse conductivity type (ordinarily the p type) are formed in a region where the device is provided, and a reverse bias is applied across the buried layer and the doped layer to shut off the noise produced within the substrate.
    Type: Grant
    Filed: June 2, 1989
    Date of Patent: September 18, 1990
    Assignee: Hitachi, Ltd.
    Inventors: Noriyuki Homma, Tohru Nakamura, Kazuo Nakazato, Motoaki Matsumoto, Tetsuya Hayashida, Masaharu Kubo, Kazuhiko Sagara
  • Patent number: 4942555
    Abstract: A semiconductor memory is provided having high reliability, and which particularly prevents data destruction by rays, and the like. In a semiconductor memory for detecting memory data from the conduction ratio between a transistor of a flip-flop type memory cell connected to selected word line and data line pairs and a load device of the data line, an arrangement is provided for setting the word line voltage to a voltage lower than the sum of the data line voltage and the threshold voltage of a data transfer MOS transistor of the memory cell. The signal read out from the memory cell is then applied through the data line to a differential amplifier using the base or gate of a junction type transistor as its input. Particularly to set the word line voltage to a voltage lower than the sum of the data line voltage and the threshold voltage of the data transfer MOS transistor of the memory cell, a device having high driving capability such as a bipolar transistor is used as the load of the data line.
    Type: Grant
    Filed: July 7, 1989
    Date of Patent: July 17, 1990
    Assignee: Hitachi, Ltd.
    Inventors: Hisayuki Higuchi, Makoto Suzuki, Noriyuki Homma, Kiyoo Itoh