Patents by Inventor Noriyuki Kinjo

Noriyuki Kinjo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5821606
    Abstract: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.
    Type: Grant
    Filed: January 29, 1997
    Date of Patent: October 13, 1998
    Assignee: Hitachi, Ltd.
    Inventors: Gen Murakami, Kunihiro Tsubosaki, Masahiro Ichitani, Kunihiko Nishi, Ichiro Anjo, Asao Nishimura, Makoto Kitano, Akihiro Yaguchi, Sueo Kawai, Masatsugu Ogata, Syuuji Eguchi, Hiroyoshi Kokaku, Masanori Segawa, Hiroshi Hozoji, Takashi Yokoyama, Noriyuki Kinjo, Aizo Kaneda, Junichi Saeki, Shozo Nakamura, Akio Hasebe, Hiroshi Kikuchi, Isamu Yoshida, Takashi Yamazaki, Kazuyoshi Oshima, Tetsurou Matsumoto
  • Patent number: 5793099
    Abstract: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.
    Type: Grant
    Filed: May 7, 1996
    Date of Patent: August 11, 1998
    Assignee: Hitachi, Ltd.
    Inventors: Gen Murakami, Kunihiro Tsubosaki, Masahiro Ichitani, Kunihiko Nishi, Ichiro Anjoh, Asao Nishimura, Makoto Kitano, Akihiro Yaguchi, Sueo Kawai, Masatsugu Ogata, Syuuji Eguchi, Hiroyoshi Kokaku, Masanori Segawa, Hiroshi Hozoji, Takashi Yokoyama, Noriyuki Kinjo, Aizo Kaneda, Junichi Saeki, Shozo Nakamura, Akio Hasebe, Hiroshi Kikuchi, Isamu Yoshida, Takashi Yamazaki, Kazuyoshi Oshima, Tetsurou Matsumoto
  • Patent number: 5612569
    Abstract: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.
    Type: Grant
    Filed: June 5, 1995
    Date of Patent: March 18, 1997
    Assignee: Hitachi, Ltd.
    Inventors: Gen Murakami, Kunihiro Tsubosaki, Masahiro Ichitani, Kunihiko Nishi, Ichiro Anjoh, Asao Nishimura, Makoto Kitano, Akihiro Yaguchi, Sueo Kawai, Masatsugu Ogata, Syuuji Eguchi, Hiroyoshi Kokaku, Masanori Segawa, Hiroshi Hozoji, Takashi Yokoyama, Noriyuki Kinjo, Aizo Kaneda, Junichi Saeki, Shozo Nakamura, Akio Hasebe, Hiroshi Kikuchi, Isamu Yoshida, Takashi Yamazaki, Kazuyoshi Oshima, Tetsurou Matsumoto
  • Patent number: 5530286
    Abstract: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.
    Type: Grant
    Filed: August 22, 1994
    Date of Patent: June 25, 1996
    Assignee: Hitachi, Ltd.
    Inventors: Gen Murakami, Kunihiro Tsubosaki, Masahiro Ichitani, Kunihiko Nishi, Ichiro Anjoh, Asao Nishimura, Makoto Kitano, Akihiro Yaguchi, Sueo Kawai, Masatsugu Ogata, Syuuji Eguchi, Hiroyoshi Kokaku, Masanori Segawa, Hiroshi Hozoji, Takashi Yokoyama, Noriyuki Kinjo, Aizo Kaneda, Junichi Saeki, Shozo Nakamura, Akio Hasebe, Hiroshi Kikuchi, Isamu Yoshida, Takashi Yamazaki, Kazuyoshi Oshima, Tetsurou Matsumoto
  • Patent number: 5358904
    Abstract: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.
    Type: Grant
    Filed: December 14, 1992
    Date of Patent: October 25, 1994
    Assignee: Hitachi, Ltd.
    Inventors: Gen Murakami, Kunihiro Tsubosaki, Masahiro Ichitani, Kunihiko Nishi, Ichiro Anjoh, Asao Nishimura, Makoto Kitano, Akihiro Yaguchi, Sueo Kawai, Masatsugu Ogata, Syuuji Eguchi, Hiroyoshi Kokaku, Masanori Segawa, Hiroshi Hozoji, Takashi Yokoyama, Noriyuki Kinjo, Aizo Kaneda, Junichi Saeki, Shozo Nakamura, Akio Hasebe, Hiroshi Kikuchi, Isamu Yoshida, Takashi Yamazaki, Kazuyoshi Oshima, Tetsurou Matsumoto
  • Patent number: 5219706
    Abstract: There are disclosed a novel naphthalocyanine derivative represented by the general formula [I] or [II] shown below, a process for preparing said derivative, an optical information recording medium using said derivative, and a process for preparing thereof: ##STR1## wherein M is a metal, metal oxide, metal hydroxide and the like, R.sup.1 is an alkyl group of 1-22 carbon atoms, n is an integer of 1 to 4, and Y.sub.1 and Y.sub.2 aryloxy group and the like.
    Type: Grant
    Filed: January 21, 1992
    Date of Patent: June 15, 1993
    Assignee: Hitachi, Ltd.
    Inventors: Seiji Tai, Shigeru Hayashida, Nobuyuki Hayashi, Yasushi Iwakabe, Shunichi Numata, Noriyuki Kinjo, Susumu Era, Setsuo Kobayashi, Akio Mukoh, Yoshio Sato
  • Patent number: 5215842
    Abstract: A photosensitive element for electrophotography has an electrically conductive substrate and a layer structure thereon comprising a charge generating substance and a charge transport substance. An improved charge transport substance is a derivative of triphenylamine in which at least 80% of the electrons in the highest occupied molecular orbital are located on the triphenylamine skeleton. Examples of such compounds have the following formula: ##STR1## wherein X is a an optionally substituted heterocyclic radical containing at least one ring nitrogen, Q is a single bond or --C.dbd.C--, and Z.sub.1, Z.sub.2 and Z.sub.3 are H, lower alkyl or alkoxy, aryl, NO.sub.2, CF.sub.3, --N(R').sub.2, --S--C.sub.6 H.sub.5 or --S(R').sub.2.
    Type: Grant
    Filed: January 8, 1991
    Date of Patent: June 1, 1993
    Assignees: Hitachi, Ltd., Hitachi Chemical Co., Ltd.
    Inventors: Sukekazu Aratani, Shigeo Suzuki, Akira Hosoya, Katuo Sugawara, Toshiro Saito, Tsuneaki Kawanishi, Noriyuki Kinjo, Yasuo Katsuya, Akira Kageyama
  • Patent number: 5194579
    Abstract: Polyimides represented by general formula (I), (wherein Ar.sub.1 and Ar.sub.2 each represents an aromatic ring-containing group, Cf represents a fluorinated alkyl group directly bonded to Ar.sub.1, and m.gtoreq.1), and polyamide acids as their percursors. The polyimides have excellent humidity resistance and heat resistance, thus being useful as coating materials for semiconductor chips and insulating films for multi-layered wiring.
    Type: Grant
    Filed: November 5, 1990
    Date of Patent: March 16, 1993
    Assignees: Hitachi, Ltd., Hitachi Chemical Co., Ltd.
    Inventors: Shunichi Numata, Kooji Fujisaki, Noriyuki Kinjo
  • Patent number: 5075159
    Abstract: An electrically insulated coil manufactured with a composition comprising a poly-functional epoxy resin having at least three of p-(2,3-epoxy propoxy) phenyl groups and a bi-functional epoxy resin as a binding resin for a reinforced insulating base sheet and as an impregnation resin has no peeling off in its insulating layers and is capable to be used continuously under the temperature at 200.degree. C. or above.
    Type: Grant
    Filed: August 2, 1990
    Date of Patent: December 24, 1991
    Inventors: Tohru Koyama, Chikashi Kanno, Koo Honjyo, Noriyuki Kinjo, Ikushi Kano, Syoichi Maruyama
  • Patent number: 5068712
    Abstract: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.
    Type: Grant
    Filed: September 19, 1989
    Date of Patent: November 26, 1991
    Assignee: Hitachi, Ltd.
    Inventors: Gen Murakami, Kunihiro Tsubosaki, Masahiro Ichitani, Kunihiko Nishi, Ichiro Anjo, Asao Nishimura, Makoto Kitano, Akihiro Yaguchi, Sueo Kawai, Masatsugu Ogata, Syuuji Eguchi, Hiroyoshi Kokaku, Masanori Segawa, Hiroshi Hozoji, Takashi Yokoyama, Noriyuki Kinjo, Aizo Kaneda, Junichi Saeki, Shozo Nakamura, Akio Hasebe, Hiroshi Kikuchi, Isamu Yoshida, Takashi Yamazaki, Kazuyoshi Oshima, Tetsuro Matsumoto
  • Patent number: 5021563
    Abstract: A metal naphthalocyanine derivative and process for producing said derivative which is represented by the following formula (I): ##STR1## wherein M represents germanium or tin; L and L' each independently represent a halogen, a hydroxyl group, an alkyl group, an alkoxy group or a siloxy group of the formula R.sub.1 R.sub.2 R.sub.3 SiO-- (wherein R.sub.1, R.sub.2 and R.sub.3 each independently represent a hydrogen atom, an alkyl group, an alkoxy group or an aryl group).
    Type: Grant
    Filed: October 6, 1989
    Date of Patent: June 4, 1991
    Assignees: Hitachi Chemical Company, Ltd., Hitachi, Ltd.
    Inventors: Shigeru Hayashida, Seiji Tai, Nobuyuki Hayashi, Yasushi Iwakabe, Noriyuki Kinjo, Shunichi Numata
  • Patent number: 4886721
    Abstract: Disclosed are an electrophotographic plate comprising a photoconductive layer containing an organic photoconductive substance on an electroconductive support, characterized in that said photoconductive layer has a film containing as the organic photoconductive substance a metal naphthalocyanine derivative represented by the formula (I): ##STR1## wherein M represents germanium or tin; L and L' each independently represent a halogen, a hydroxyl group, an alkyl group, an alkoxy group or a siloxy group of the formula R.sub.1 R.sub.2 R.sub.3 SiO-- (wherein R.sub.1, R.sub.2 and R.sub.3 each independently represent a hydrogen atom, an alkyl group, an alkoxy group or an aryl group),a metal naphthalocyanine derivative defined above and a process for producing the same.
    Type: Grant
    Filed: January 25, 1988
    Date of Patent: December 12, 1989
    Assignees: Hitachi Chemical Company, Ltd., Hitachi, Ltd.
    Inventors: Shigeru Hayashida, Seiji Tai, Nobuyuki Hayashi, Yasushi Iwakabe, Noriyuki Kinjo, Shunichi Numata
  • Patent number: 4792476
    Abstract: A resin material comprising a polyamide having as chemical structural unit at least one aromatic ring which can rotate around its molecular axis but has no flexibility at another direction, said polyimide being oriented at least at a uniaxial direction, has a low thermal expansion coefficient and can be shaped together with an inorganic material into one body to give a composite shaped article.
    Type: Grant
    Filed: July 24, 1987
    Date of Patent: December 20, 1988
    Assignees: Hitachi, Ltd., Hitachi Chemical Co.
    Inventors: Shun-ichi Numata, Koji Fujisaki, Noriyuki Kinjo, Junichi Imaizumi, Yoshikatsu Mikami
  • Patent number: 4759958
    Abstract: A method for forming a polyimide film on a substrate surface by chemical vapor deposition comprises evaporating an aromatic monomer compound having one amino group and two adjacent carboxyl groups or its derivative group, such as esters of 4-amino phthalic acid, and 4-(p-anilino) phthalic acid, thus a high strength polyimide is obtained represented by the general formula having its imide groups being unidirectionally arranged in its backbone chain: ##STR1## wherein R is nil or divalent aliphatic or aromatic group and n is an integer.
    Type: Grant
    Filed: July 23, 1987
    Date of Patent: July 26, 1988
    Assignee: Hitachi, Ltd.
    Inventors: Shunichi Numata, Ikeda Takayoshi, Koji Fujisaki, Takao Miwa, Noriyuki Kinjo
  • Patent number: 4760126
    Abstract: A polyimide or polyamic acid synthesized from a diamine, which may be fluorinated, and a dianhydride of the following formula: ##STR1## where R.sub.f =perfluoroalkylene and Y.sub.1 and Y.sub.2 are independently oxy-carbonyl or thiocarbonyl.
    Type: Grant
    Filed: September 8, 1986
    Date of Patent: July 26, 1988
    Assignees: Hitachi, Ltd., Hitachi Chemical Co. Ltd.
    Inventors: Shunichi Numata, Koji Fujisaki, Noriyuki Kinjo
  • Patent number: 4690999
    Abstract: A resin material comprising a polyimide having as chemical structural unit at least one aromatic ring which can rotate around its molecular axis but has no flexibility at another direction, said polyimide being oriented at least at a uniaxial direction, has a low thermal expansion coefficient and can be shaped together with an inorganic material into one body to give a composite shaped article.
    Type: Grant
    Filed: August 1, 1984
    Date of Patent: September 1, 1987
    Assignees: Hitachi, Ltd., Hitachi Chemical Co., Ltd.
    Inventors: Shun-ichi Numata, Koji Fujisaki, Noriyuki Kinjo, Junichi Imaizumi, Yoshikatsu Mikami
  • Patent number: 4642601
    Abstract: The humidity-sensitive element of this invention is composed of an insulating substrate (1), a pair of electrodes (2, 3) mounted thereon, and a humidity-sensitive material (8) covering the electrodes. The humidity-sensitive material (8) has a property to change its electric resistance depending on the moisture content in the atmosphere and is formed from fine particles each having a hydrophobic core and a hydrophilic group-containing surface layer covering the core. This humidity-sensitive element exhibits a nearly linear relationship between logarithum of electric resistance and relative humidity and small hysteresis, permitting a precise measurement of relative humidity. Insulating substrate (1) and electrodes (2,3) are preferred to form from an insulating layer of silicon semiconductor and conductive monosilicon formed on it, respectively. This permits size reduction of humidity-sensitive elements or devices.
    Type: Grant
    Filed: March 18, 1982
    Date of Patent: February 10, 1987
    Assignee: Hitachi, Ltd.
    Inventors: Tooru Sugawara, Shigeki Tsuchitani, Noriyuki Kinjo, Shuichi Ohara
  • Patent number: 4641924
    Abstract: A liquid crystal device comprising a thermal writing type liquid crystal, an electrode for generating heat necessary for said thermal writing, and a support for supporting said liquid crystal and said electrode, wherein a material having a coefficient of thermal expansion lying between the coefficient of thermal expansion of said electrode and that of said support is arranged between said electrode and said support, whereby said electrode for generating heat can be prevented from being degraded by failure or peeling from the support due to thermal stress.
    Type: Grant
    Filed: January 31, 1985
    Date of Patent: February 10, 1987
    Assignee: Hitachi, Ltd.
    Inventors: Yoshiharu Nagae, Shunichi Numata, Noriyuki Kinjo, Katuyuki Funahata
  • Patent number: 4473813
    Abstract: The invention relates to a humidity sensor of electric resistance type whose electric resistance changes in accordance with an ambient humidity, characterized by a protective film of silicone resin provided on the surface of a humidity-sensitive material, and to a method for preparing the same. The protective film of silicone resin is formed by applying a varnish of siloxanes to the humidity-sensitive material and subjecting the varnish to reaction. The varnish can be of one-part curing system or two-part curing system, and desirably the reaction of siloxanes is a cross-linking reaction. The formed protective film is not influenced by swelling or shrinking of the humidity-sensitive material, and is prevented from flowing off due to a temperature rise, or from deposition of dusts, etc.
    Type: Grant
    Filed: September 28, 1982
    Date of Patent: September 25, 1984
    Assignee: Hitachi, Ltd.
    Inventors: Noriyuki Kinjo, Shuichi Ohara, Toru Sugawara, Shigeki Tsuchitani
  • Patent number: 4211686
    Abstract: An unsaturated polyester resin composition for use in pressure molding, which comprises an unsaturated polyester resin and fillers consisting essentially of (a) calcium carbonate powder which passes a 325 mesh sieve, (b) an inorganic mineral particulate which passes a 12 mesh sieve and is retained on a 200 mesh sieve and (c) glass fibers having a length larger than 0.2 mm, wherein the ratio by weight of (a) to (b) is within a range of from 0.3 to 10, the ratio of (a)+(b) to the unsaturated polyester resin is within a range of from 1.5 to 7, and the ratio of (c) to the total weight of the resin, calcium carbonate, silica sand and glass fiber is within a range of from 0.01 to 0.25.
    Type: Grant
    Filed: February 10, 1977
    Date of Patent: July 8, 1980
    Assignee: Hitachi, Ltd.
    Inventors: Akio Nishikawa, Junichi Katagiri, Noriyuki Kinjo, Hitoshi Yokono, Tamotsu Ikeda, Tsuguo Kobayashi