Abstract: A highly reliable adhesive film that mitigates curving caused by the difference in linear expansion coefficients between the adherends, without adding large stress on the adherends. The adhesive film includes: (A) a curable resin with a structure containing an alicyclic hydrocarbon with 5 to 8 carbons, which is substituted by at least 4 alkyl groups of 4 to 12 carbons, which further contains at least one curable part; and (B) a polymerization initiator with a one-hour half-life temperature of 140° C. or higher. Further, an adhesive film with dicing tape, which includes such an adhesive film laminated on to a dicing tape, is provided.

Abstract: A maleimide film that utilizes maleimide resin, which shows high heat history resistance and is highly reliable, and an adhesive film with dicing tape including the maleimide film laminated on to a dicing tape. Specifically, it is a maleimide adhesive film, which includes a maleimide resin and a radical initiator with a one-hour half-life temperature of 140° C. or higher. Preferably, it is a maleimide adhesive film, wherein the maleimide resin is of a specific structure. Further, an adhesive film with dicing tape, which included such a maleimide adhesive film laminated on to a dicing tape, is provided.

Abstract: A highly heat conductive metal-clad laminate, which may be included in a highly heat conductive polyimide film, has a metal layer on one or both sides of an insulating layer which has a heat conductive filler-filled polyimide layer. The insulating layer of the highly heat conductive metal-clad laminate or the highly heat conductive polyimide film having the filler-filled polyimide layer is characterized in that the content of the heat conductive filler in the filler-filled polyimide layer is 20-80 wt %, the heat conductive filler contains a plate-like filler with an average length DL of 0.1-15 ?m and a spherical filler with an average particle diameter DR of 0.05-10 ?m, DL and DR satisfy the relationship DL>DR/2, no heat conductive filler of 30 ?m or more is contained, and the coefficient of thermal expansion is in the range of 10-30 ppm/K.

Abstract: Provided is a highly heat conductive metal-clad laminate which shows heat resistance, dimensional stability, workability, and adhesiveness and excellent thermal conductivity properties. Also provided is a highly heat conductive polyimide film. The highly heat conductive metal-clad laminate has a metal layer on one or both sides of an insulating layer which has a heat conductive filler-filled polyimide layer. The insulating layer of the highly heat conductive metal-clad laminate or the highly heat conductive polyimide film having the filler-filled polyimide layer is characterized in that the content of the heat conductive filler in the filler-filled polyimide layer is 20-80 wt %, the heat conductive filler contains a plate-like filler with an average length DL of 0.1-15 ?m and a spherical filler with an average particle diameter DR of 0.

Abstract: A semiconductor package production method containing a step in which a bond layer made of a single-layer film thermoset bond is provided on the back of a wafer on which many semiconductor devices are formed, a dicing tape is pasted onto its bond layer side, and the bond layer and the wafer are diced simultaneously in order to obtain semiconductor devices with the bond layer, and a step in which the semiconductor devices with the bond layer are detached from the dicing tape and die-attached to interposing substrates serving as bodies to which they are bonded; wherein, the aforementioned film thermoset bond contains an epoxy resin, an epoxy resin hardener, and a phenoxy resin as well as 50-80 wt % of spherical silica, and the bond layer is 100 ?m or thicker. A semiconductor device made by this method and a wafer for use with this method.

Abstract: A semiconductor package production method containing a step in which a bond layer made of a single-layer film thermoset bond is provided on the back of a wafer on which many semiconductor devices are formed, a dicing tape is pasted onto its bond layer side, and the bond layer and the wafer are diced simultaneously in order to obtain semiconductor devices with the bond layer, and a step in which the semiconductor devices with the bond layer are detached from the dicing tape and die-attached to interposing substrates serving as bodies to which they are bonded; wherein, the aforementioned film thermoset bond contains an epoxy resin, an epoxy resin hardener, and a phenoxy resin as well as 50-80 wt % of spherical silica, and the bond layer is 100 ?m or thicker. A semiconductor device made by this method and a wafer for use with this method.

Abstract: A semiconductor package production method containing a step in which a bond layer made of a single-layer film thermoset bond is provided on the back of a wafer on which many semiconductor devices are formed, a dicing tape is pasted onto its bond layer side, and the bond layer and the wafer are diced simultaneously in order to obtain semiconductor devices with the bond layer, and a step in which the semiconductor devices with the bond layer are detached from the dicing tape and die-attached to interposing substrates serving as bodies to which they are bonded; wherein, the aforementioned film thermoset bond contains an epoxy resin, an epoxy resin hardener, and a phenoxy resin as well as 50-80 wt % of spherical silica, and the bond layer is 100 &mgr;m or thicker. A semiconductor device made by this method and a wafer for use with this method.

Abstract: A semiconductor package production method containing a step in which a bond layer made of a single-layer film thermoset bond is provided on the back of a wafer on which many semiconductor devices are formed, a dicing tape is pasted onto its bond layer side, and the bond layer and the wafer are diced simultaneously in order to obtain semiconductor devices with the bond layer, and a step in which the semiconductor devices with the bond layer are detached from the dicing tape and die-attached to interposing substrates serving as bodies to which they are bonded; wherein, the aforementioned film thermoset bond contains an epoxy resin, an epoxy resin hardener, and a phenoxy resin as well as 50-80 wt % of spherical silica, and the bond layer is 100 &mgr;m or thicker. A semiconductor device made by this method and a wafer for use with this method.

Abstract: A semiconductor package production method containing a step in which a bond layer made of a single-layer film thermoset bond is provided on the back of a wafer on which many semiconductor devices are formed, a dicing tape is pasted onto its bond layer side, and the bond layer and the wafer are diced simultaneously in order to obtain semiconductor devices with the bond layer, and a step in which the semiconductor devices with the bond layer are detached from the dicing tape and die-attached to interposing substrates serving as bodies to which they are bonded; wherein, the aforementioned film thermoset bond contains an epoxy resin, an epoxy resin hardener, and a phenoxy resin as well as 50-80 wt % of spherical silica, and the bond layer is 100 &mgr;m or thicker. A semiconductor device made by this method and a wafer for use with this method.

Abstract: A semiconductor package production method containing a step in which a bond layer made of a single-layer film thermoset bond is provided on the back of a wafer on which many semiconductor devices are formed, a dicing tape is pasted onto its bond layer side, and the bond layer and the wafer are diced simultaneously in order to obtain semiconductor devices with the bond layer, and a step in which the semiconductor devices with the bond layer are detached from the dicing tape and die-attached to interposing substrates serving as bodies to which they are bonded; wherein, the aforementioned film thermoset bond contains an epoxy resin, an epoxy resin hardener, and a phenoxy resin as well as 50-80 wt % of spherical silica, and the bond layer is 100 &mgr;m or thicker. A semiconductor device made by this method and a wafer for use with this method.