Abstract: An AUV includes: an underwater vehicle main body configured to sail along an inspection object located in water or on the bottom of the water; an arm extending from the underwater vehicle main body; an inspection tool portion including a contact portion configured to contact the inspection object and an inspection device configured to inspect the inspection object; and a passive joint provided between the arm and the inspection tool portion and configured to allow passive rotation of the inspection tool portion relative to the arm about at least one axis.

Abstract: [PROBLEM] An object of the present invention is to provide a nonvolatile memory device having an excellent information retention characteristic, exhibiting high performance, and achieving practical mass-production, and a manufacturing method therefor. [SOLUTION] A nonvolatile memory device 1 has a laminated structure part including a plurality of Al2O3 layers 4 and a plurality of SiO2 layers 6 formed as two types of insulating layers formed with different compositions and disposed alternately, and an O-M1-O layer 5 of a 0.5 molecular layer to a 2.0 molecular layer, formed by a chemical bond between a metal element M1 and oxygen, and disposed on each joining interface between the insulating layers, the metal element M1 being an element other than elements constituting the insulating layers, and the nonvolatile memory device stores information by modulating an interface dipole induced in the vicinity of the O-M1-O layer 5 by external electrical stimulation.

Abstract: [Problem]: The problem of the present invention is to provide a stacked structure excellent in stability of atomic arrangement, a method of manufacturing same, and a semiconductor device using the stacked structure. [Solution]: The stacked structure of the present invention is characterized in that it has an alloy layer A having germanium and tellurium as a main component and an alloy layer B having tellurium and either of antimony or bismuth as a main component, and at least either of the alloy layer A or the alloy layer B contains at least either of sulfur or selenium as a chalcogen atom.

Abstract: A nonvolatile memory device can be manufactured without adding any major modification to a structure and component elements of a conventional MOS type silicon device, and is realized without deteriorating an electrical characteristic of an insulating-film/semiconductor interface and on the basis of a new operational principle. The nonvolatile memory device 10 is a capacitor configured by a metal electrode 16, two kinds of insulating films 13 and 15, and an interface structure of an insulating film 12/semiconductor 11, and has a MIS structure of providing a monolayer-level O-M1-O layer 14 to an insulating-film 13/semiconductor 15 interface. The nonvolatile memory device 10 realizes a nonvolatile information storage operation by changing strength or polarities of interface dipoles induced near the O-M1-O layer 14 through electrical stimulation applied from a gate electrode.

Abstract: A nonvolatile memory device can be manufactured without adding any major modification to a structure and component elements of a conventional MOS type silicon device, and is realized without deteriorating an electrical characteristic of an insulating-film/semiconductor interface and on the basis of a new operational principle. The nonvolatile memory device 10 is a capacitor configured by a metal electrode 16, two kinds of insulating films 13 and 15, and an interface structure of an insulating film 12/semiconductor 11, and has a MIS structure of providing a monolayer-level O-M1-O layer 14 to an insulating-film 13/semiconductor 15 interface. The nonvolatile memory device 10 realizes a nonvolatile information storage operation by changing strength or polarities of interface dipoles induced near the O-M1-O layer 14 through electrical stimulation applied from a gate electrode.

Abstract: Medicaments that depend on a combination of SGLT 2 inhibitors and antihypertensive drugs and which are useful in the treatment of diseases involving at least hypertension or diabetes mellitus as a risk factor of cardiovascular events, as well as methods of treating the diseases are provided. Since the present invention exhibits a superior hypotensive action that cannot be attained by any single antihypertensive drugs, the conventional problems associated with the use of two or more antihypertensive drugs in order to lower the blood pressure to the desired level can be solved. In addition, the present invention shows a marked therapeutic efficacy in diabetes mellitus, a disease associated with diabetes mellitus, or complications of diabetes mellitus, in particular, diabetic nephropathy. As a further advantage, the present invention is also useful for the treatment of diseases involving lowered renal function.

Abstract: Medicaments that depend on a combination of SGLT 2 inhibitors and antihypertensive drugs and which are useful in the treatment of diseases involving at least hypertension or diabetes mellitus as a risk factor of cardiovascular events, as well as methods of treating the diseases are provided. Since the present invention exhibits a superior hypotensive action that cannot be attained by any single antihypertensive drugs, the conventional problems associated with the use of two or more antihypertensive drugs in order to lower the blood pressure to the desired level can be solved. In addition, the present invention shows a marked therapeutic efficacy in diabetes mellitus, a disease associated with diabetes mellitus, or complications of diabetes mellitus, in particular, diabetic nephropathy. As a further advantage, the present invention is also useful for the treatment of diseases involving lowered renal function.

Abstract: There is provided a method of producing a semiconductor wafer, including: forming a compound semiconductor layer on a base wafer by epitaxial growth; cleansing a surface of the compound semiconductor layer by means of a cleansing agent containing a selenium compound; and forming an insulating layer on the surface of the compound semiconductor layer. Examples of the selenium compound include a selenium oxide. Examples of the selenium oxide include H2SeO3. The cleansing agent may further contain one or more substances selected from the group consisting of water, ammonium, and ethanol. When the surface of the compound semiconductor layer is made of InxGa1-xAs (0?x?1), the insulating layer is preferably made of Al2O3, and Al2O3 is preferably formed by ALD.

Abstract: Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of Inx1Ga1-x1Asy1P1-y1 (0<x1?1, 0?y1?1), the second semiconductor crystal layer is made of Inx2Ga1-x2Asy2P1-y2 (0?x2?1, 0?y2?1, y2?y1), and the electron affinity Ea1 of the first semiconductor crystal layer is lower than the electron affinity Ea2 of the second semiconductor crystal layer.

Abstract: There is provided a method of producing a semiconductor wafer, including: forming a compound semiconductor layer on a base wafer by epitaxial growth; cleansing a surface of the compound semiconductor layer by means of a cleansing agent containing a selenium compound; and forming an insulating layer on the surface of the compound semiconductor layer. Examples of the selenium compound include a selenium oxide. Examples of the selenium oxide include H2SeO3. The cleansing agent may further contain one or more substances selected from the group consisting of water, ammonium, and ethanol. When the surface of the compound semiconductor layer is made of InxGa1-xAs (0?x?1), the insulating layer is preferably made of Al2O3, and Al2O3 is preferably formed by ALD.

Abstract: Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of Inx1Ga1-x1Asy1P1-y1 (0<x1?1, 0?y1?1), the second semiconductor crystal layer is made of Inx2Ga1-x2Asy2P1-y2 (0?x2?1, 0?y2?1, y2?y1), and the electron affinity Ea1 of the first semiconductor crystal layer is lower than the electron affinity Ea2 of the second semiconductor crystal layer.

Abstract: There is provided a semiconductor device that includes a III-V Group compound semiconductor having a zinc-blende-type crystal structure, an insulating material being in contact with the (111) plane of the III-V Group compound semiconductor, a plane of the III-V Group compound semiconductor equivalent to the (111) plane, or a plane that has an off angle with respect to the (111) plane or the plane equivalent to the (111) plane, and an MIS-type electrode being in contact with the insulating material and including a metal conductive material.

Abstract: A molding attaching clip 30 includes a fixed portion 31 to be fixed in a groove 15 of a roof panel 10, a pair of elastically deformable wall portions 32 which are erected from the fixed portion 31, a pair of engaging portions 33 which are provided on the pair of wall portions 32, and an elastically deformable guide portion 36 which is projected from the fixed portion 31. A roof molding 20 includes a head portion 21 for covering the groove 15, and a projected portion 27 which is protruded from a back face of the head portion 21. The projected portion has a pair of locking portions 24 which are provided on both side faces thereof, and a receiving groove 26 which is formed in the projected portion 27. On occasion of engaging the roof molding 20 with the molding attaching clip 30, the roof molding 20 is positioned so that the pair of locking portions 24 can be engaged with the pair of engaging portions 33, by butting the receiving groove 26 against the guide portion 36.

Abstract: A method for treating cerebral vascular diseases in a human or non-human animal is disclosed. The method involves inhibiting 20-HETE synthesizing enzyme activity sufficiently to increase or prevent a decrease in cerebral blood flow in the human or non-human animal.

Abstract: A molding attaching clip 30 includes a fixed portion 31 to be fixed in a groove 15 of a roof panel 10, a pair of elastically deformable wall portions 32 which are erected from the fixed portion 31, a pair of engaging portions 33 which are provided on the pair of wall portions 32, and an elastically deformable guide portion 36 which is projected from the fixed portion 31. A roof molding 20 includes a head portion 21 for covering the groove 15, and a projected portion 27 which is protruded from a back face of the head portion 21. The projected portion has a pair of locking portions 24 which are provided on both side faces thereof, and a receiving groove 26 which is formed in the projected portion 27. On occasion of engaging the roof molding 20 with the molding attaching clip 30, the roof molding 20 is positioned so that the pair of locking portions 24 can be engaged with the pair of engaging portions 33, by butting the receiving groove 26 against the guide portion 36.

Abstract: A hydroxyformamidine compound represented by the following formula or a pharmaceutically acceptable salt thereof [wherein R1 represents a substituted morpholino group, a substituted piperidino group, a piperazin-1-yl group, a substituted piperazin-1-yl group, a thiomorpholin-1-yl group, a perhydroazepin-1-yl group, a perhydroazocin-1-yl group, a tetrahydropyridin-1-yl group, a pyrrolin-1-yl group, etc.; X represents a nitrogen atom or a group represented by CR5; and R2 to R5 are the same or different and each represents a hydrogen atom, a C1-4 alkyl group, a C1-4 alkoxy group, a trifluoromethyl group or a halogen atom.] There is provided a drug which inhibits an enzyme producing 20-HETE participating in a contracting or dilating action for microvessels and an inducing action for cell proliferation in main organs such as kidney and cerebrovascular vessels.

Abstract: A therapeutic agent for hypertension, which comprises as an active ingredient a compound capable of inhibiting Na+/Ca2+ exchanger 1.

Abstract: The present invention relates to an inhibitor for production of 20-hydroxyeicosatetraenoic acid, comprising, as an effective ingredient, specific hydroxyformamidine derivatives or pharmaceutically-acceptable salts thereof. The inhibitors according to the present invention are useful as therapeutic agents for kidney diseases, cerebrovascular diseases, or circulatory diseases. In addition, the present invention also provides novel hydroxyformamidine derivatives or pharmaceutically-acceptable salts thereof.

Abstract: A therapeutic agent for hypertension, which comprises as an active ingredient a compound capable of inhibiting Na+/Ca2+ exchanger 1.

Abstract: A therapeutic agent for chronic kidney diseases, which comprises as an active ingredient a compound capable of inhibiting Na+/Ca2+ exchanger 1.