Abstract: Dry etching of a metal oxide film exposed without being coated with a photoresist is carried out with plasma of a gas obtained by mixing hydrogen iodide with at least one gas selected from the group consisting of a group consisting of fluorine gas and fluorine-based compound gases and a group consisting of nitrogen gas and nitrogen-based compound gases, and then after the exposing of the above mentioned photoresist film to plasma of oxygen gas, the remaining photoresist film is removed by etching with plasma of a gas obtained by mixing oxygen gas with at least one gas selected from the group consisting of a group consisting of fluorine gas and fluorine-based compound gases and a group consisting of nitrogen gas and nitrogen-based compound gases.

Abstract: A process for preparing an organic silicon compound is here disclosed which comprises the step of reacting a halogenated hydrocarbon selected from the group consisting ##STR1## wherein each of X.sup.1 to X.sup.16 is selected from the group consisting of hydrogen, an alkyl group, alkenyl group, phenyl group, naphthyl group, alkoxy group, acyl group, alkylamino group and dialkylamino group having 1 to 20 carbon atoms which are unsubstituted or substituted and a halogen atom; and each of at least one of X.sup.1 to X.sup.4, at least one of X.sup.8 to X.sup.10 and at least one of X.sup.11 to X.sup.16 is a halogen atom,with a silane selected from the group consisting of SiH.sub.4, Si.sub.2 H.sub.6 and Si.sub.3 H.sub.8.

Abstract: An alkaline cell having a gelled zinc negative electrode solely or mainly using, as a gelling agent to hold a zinc powder in an alkaline electrolyte, a granular crosslinking type branched polyacrylic acid, polymethacrylic acid or salts thereof.This gelling agent, holding an alkaline electrolyte, swells and properly maintains the thickness of the electrolyte, whereby the electrolyte can be sufficiently fed to a cell reaction portion and the alkaline cell is imparted with excellent drop resistance and shelf stability.

Abstract: A process for disproportionating silanes, which comprises contacting a silane having at least one Si--H bond represented by the general formulaR.sub.l H.sub.m SiX.sub.4-(l+m)wherein R represents an alkyl or aryl group, X represents a halogen atom or an alkoxy group, l is 0, 1 or 2, and m is 1, 2 or 3 and l+m is 1, 2 or 3, and when l is 2, R's may be identical or different, and when l+m is 1 or 2, X's may be identical or different, with a reaction product of a strong acid-type cation exchange resin with an amine and disproportionating the silane.