Patents by Inventor Noriyuki Yokonaga

Noriyuki Yokonaga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reduction of defects formed on the surface of a silicon oxynitride film
    Patent number: 8158534
    Abstract: Methods for reducing defects on the surface of a silicon oxynitride film are disclosed, in one embodiment, the methods include, forming a silicon oxynitride film on a semiconductor substrate and heating the silicon oxynitride film to increase a hydrophilicity of a surface of the silicon oxynitride film prior to treating the surface of the silicon oxynitride film with a hydrofluoric acid.
    Type: Grant
    Filed: February 22, 2011
    Date of Patent: April 17, 2012
    Assignee: Spansion LLC
    Inventor: Noriyuki Yokonaga
  • REDUCTION OF DEFECTS FORMED ON THE SURFACE OF A SILICON OXYNITRIDE FILM
    Publication number: 20110143554
    Abstract: Methods for reducing defects on the surface of a silicon oxynitride film are disclosed, in one embodiment, the methods include, forming a silicon oxynitride film on a semiconductor substrate and heating the silicon oxynitride film to increase a hydrophilicity of a surface of the silicon oxynitride film prior to treating the surface of the silicon oxynitride film with a hydrofluoric acid.
    Type: Application
    Filed: February 22, 2011
    Publication date: June 16, 2011
    Inventor: Noriyuki YOKONAGA
  • Reduction of defects formed on the surface of a silicon oxynitride film
    Patent number: 7892984
    Abstract: Methods for reducing defects on the surface of a silicon oxynitride film are disclosed. In one embodiment, the methods include forming a silicon oxynitride film on a semiconductor substrate and heating the silicon oxynitride film to increase a hydrophilicity of a surface of the silicon oxynitride film prior to treating the surface of the silicon oxynitride film with a hydrofluoric acid.
    Type: Grant
    Filed: December 20, 2007
    Date of Patent: February 22, 2011
    Assignee: Spansion LLC
    Inventor: Noriyuki Yokonaga
  • Reduction of defects formed on the surface of a silicon oxynitride film
    Publication number: 20090023299
    Abstract: Methods for reducing defects on the surface of a silicon oxynitride film are disclosed. In one embodiment, the methods include forming a silicon oxynitride film on a semiconductor substrate and heating the silicon oxynitride film to increase a hydrophilicity of a surface of the silicon oxynitride film prior to treating the surface of the silicon oxynitride film with a hydrofluoric acid.
    Type: Application
    Filed: December 20, 2007
    Publication date: January 22, 2009
    Inventor: Noriyuki Yokonaga