Abstract: An operation motion is accurately determined in an operational information management system. The system includes a motion verification portion that combines and verifies plurality of pieces of sensor information and recognizes a specific body motion, a signal determination portion that determines whether an operation content of an operator is correctly performed based on the body motion recognized by the motion verification portion, and a report portion that reports a determine result of the signal determination portion.

Abstract: An output system includes a terminal device, an image-forming apparatus, and a server device. The terminal device includes an acquirer that acquires content from the server device, a generator that generates job data including a setting for outputting the content based on the acquired content, a transmitter that transmits the job data to the image-forming apparatus, and a reception slip outputter that outputs a reception slip including a reception number corresponding to the generated job data. The image-forming apparatus includes a receiver that receives the job data from the terminal device, and an outputter that outputs the content after executing a job based on the job data corresponding to the reception number when the reception number is input.

Abstract: Exemplary embodiments of the inventive concept provide a substrate for forming a single crystal layer with a lyophilic area having a high affinity to a single crystal material to maintain a position of the solution of the single crystal material, and a crystal growth inducing rail part formed in a shape of a line in the lyophilic area and having a higher affinity to the solution of the single crystal material than the lyophilic area.

Abstract: A method for manufacturing a semiconductor element in which a characteristic control layer for controlling a threshold voltage of the semiconductor element interposed in between an organic-semiconductor layer facing to a gate electrode across an insulating layer, and the insulating layer, the method comprising: selecting a density of the characteristic control layer depending on a threshold voltage of the semiconductor element; and forming the characteristic control layer of the density selected in the selection step.