Patents by Inventor Norma E. S. Cortes

Norma E. S. Cortes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8236680
    Abstract: An article of manufacture comprising a nanowire and methods of making the same. In one embodiment, the nanowire includes a Ga-doped trace formed on a surface of an indium oxide layer having a thickness in nano-scale, and wherein the Ga-doped trace is formed with a dimension that has a depth is less than a quarter of the thickness of the indium oxide layer. In one embodiment, the indium oxide layer, which is optically transparent and electrically insulating, comprises an In2O3 film, and the thickness of the indium oxide layer is about 40 nm, and the depth of the nanowire is less than 10 nm.
    Type: Grant
    Filed: June 22, 2009
    Date of Patent: August 7, 2012
    Assignee: Northwestern University
    Inventors: Tobin J. Marks, Mark C. Hersam, Norma E. S. Cortes
  • Publication number: 20100230814
    Abstract: An article of manufacture comprising a nanowire and methods of making the same. In one embodiment, the nanowire includes a Ga-doped trace formed on a surface of an indium oxide layer having a thickness in nano-scale, and wherein the Ga-doped trace is formed with a dimension that has a depth is less than a quarter of the thickness of the indium oxide layer. In one embodiment, the indium oxide layer, which is optically transparent and electrically insulating, comprises an In2O3 film, and the thickness of the indium oxide layer is about 40 nm, and the depth of the nanowire is less than 10 nm.
    Type: Application
    Filed: June 22, 2009
    Publication date: September 16, 2010
    Applicant: NORTHWESTERN UNIVERSITY
    Inventors: Tobin J. Marks, Mark C. Hersam, Norma E. S. Cortes