Abstract: A heterojunction III-V photovoltaic (PV) cell includes a base layer comprising a III-V substrate, the base layer being less than about 20 microns thick; an intrinsic layer located on the base layer; an amorphous silicon layer located on the intrinsic layer; and a transparent conducting oxide layer located on the amorphous silicon layer.

Abstract: A heterojunction III-V photovoltaic (PV) cell includes a base layer comprising a III-V substrate, the base layer being less than about 20 microns thick; an intrinsic layer located on the base layer; an amorphous silicon layer located on the intrinsic layer; and a transparent conducting oxide layer located on the amorphous silicon layer.

Abstract: A multijunction photovoltaic (PV) cell includes a bottom flexible substrate and a bottom metal layer located on the bottom flexible substrate. The multijunction photovoltaic cell also includes a semiconductor layer located on the bottom metal layer and a stack having a plurality of junctions located on the semiconductor layer, each of the plurality of junctions having a respective bandgap. The pluralities of junctions are ordered from the junction having the smallest bandgap being located on the substrate to the junction having the largest bandgap being located on top of the stack.

Abstract: A method for forming a heterojunction III-V photovoltaic (PV) cell includes performing layer transfer of a base layer from a wafer of a III-V substrate, the base layer being less than about 20 microns thick; forming an intrinsic layer on the base layer; forming an amorphous silicon layer on the intrinsic layer; and forming a transparent conducting oxide layer on the amorphous silicon layer. A heterojunction III-V photovoltaic (PV) cell includes a base layer comprising a III-V substrate, the base layer being less than about 20 microns thick; an intrinsic layer located on the base layer; an amorphous silicon layer located on the intrinsic layer; and a transparent conducting oxide layer located on the amorphous silicon layer.

Abstract: A method for fabrication of a multijunction photovoltaic (PV) cell includes providing a stack comprising a plurality of junctions on a substrate, each of the plurality of junctions having a respective bandgap, wherein the plurality of junctions are ordered from the junction having the smallest bandgap being located on the substrate to the junction having the largest bandgap being located on top of the stack; forming a top metal layer, the top metal layer having a tensile stress, on top of the junction having the largest bandgap; adhering a top flexible substrate to the metal layer; and spalling a semiconductor layer from the substrate at a fracture in the substrate, wherein the fracture is formed in response to the tensile stress in the top metal layer.

Abstract: A method for fabrication of a multijunction photovoltaic (PV) cell includes forming a stack comprising a plurality of junctions on a substrate, each of the plurality of junctions having a respective bandgap, wherein the plurality of junctions are ordered from the junction having the largest bandgap being located on the substrate to the junction having the smallest bandgap being located on top of the stack; forming a metal layer, the metal layer having a tensile stress, on top of the junction having the smallest bandgap; adhering a flexible substrate to the metal layer; and spalling a semiconductor layer from the substrate at a fracture in the substrate, wherein the fracture is formed in response to the tensile stress in the metal layer.

Abstract: A multijunction photovoltaic (PV) cell includes a bottom flexible substrate and a bottom metal layer located on the bottom flexible substrate. The multijunction photovoltaic cell also includes a semiconductor layer located on the bottom metal layer and a stack having a plurality of junctions located on the semiconductor layer, each of the plurality of junctions having a respective bandgap. The pluralities of junctions are ordered from the junction having the smallest bandgap being located on the substrate to the junction having the largest bandgap being located on top of the stack.

Abstract: A method for fabrication of a multijunction photovoltaic (PV) cell includes forming a stack comprising a plurality of junctions on a substrate, each of the plurality of junctions having a respective bandgap, wherein the plurality of junctions are ordered from the junction having the largest bandgap being located on the substrate to the junction having the smallest bandgap being located on top of the stack; forming a metal layer, the metal layer having a tensile stress, on top of the junction having the smallest bandgap; adhering a flexible substrate to the metal layer; and spalling a semiconductor layer from the substrate at a fracture in the substrate, wherein the fracture is formed in response to the tensile stress in the metal layer.

Abstract: A method for fabrication of a multijunction photovoltaic (PV) cell includes providing a stack comprising a plurality of junctions on a substrate, each of the plurality of junctions having a respective bandgap, wherein the plurality of junctions are ordered from the junction having the smallest bandgap being located on the substrate to the junction having the largest bandgap being located on top of the stack; forming a top metal layer, the top metal layer having a tensile stress, on top of the junction having the largest bandgap; adhering a top flexible substrate to the metal layer; and spalling a semiconductor layer from the substrate at a fracture in the substrate, wherein the fracture is formed in response to the tensile stress in the top metal layer.

Abstract: A method for forming a heterojunction III-V photovoltaic (PV) cell includes performing layer transfer of a base layer from a wafer of a III-V substrate, the base layer being less than about 20 microns thick; forming an intrinsic layer on the base layer; forming an amorphous silicon layer on the intrinsic layer; and forming a transparent conducting oxide layer on the amorphous silicon layer. A heterojunction III-V photovoltaic (PV) cell includes a base layer comprising a III-V substrate, the base layer being less than about 20 microns thick; an intrinsic layer located on the base layer; an amorphous silicon layer located on the intrinsic layer; and a transparent conducting oxide layer located on the amorphous silicon layer.