Abstract: An electro-optical device is arranged as a Fabry Perot etalon comprising two mirrors and a central region. The mirrors are multilayer heterostructures of Al.sub.x Ga.sub.1-x As semiconductor materials where x alternates between 1.0 and 0.3. The central region may be a multiple quantum well structure of Al.sub.x Ga.sub.1-x As where x alternates between 0 and 0.3. The etalon material doping is non-uniform so that it is electrically a semiconductor device with a biasable central region. The optical path length in the central region is electric field dependent, and the etalon transmission or reflection is accordingly modulatable by varying the central region bias. The mirrors may be heavily doped and of opposite conductivity type with the central region undoped. This provides a PIN diode. Light incident on the etalon executes multiple transits of the central region.

Abstract: An antenna device comprises a dielectric sheet substrate having an antenna patch on one surface and a ground plane on the other surface. A hemispherical dielectric lens is arranged over the antenna patch in intimate contact with it. The substrate and the lens are of low and high permittivity material respectively. The lens couples the antenna patch radiation away from the substrate. This avoids the inefficiency arising from power trapping in the substrate of a prior art microstrip patch antenna. The antenna device radiates into a comparatively narrow cone axially perpendicular to the antenna patch, and coupling of radiation from a power source to free space can theoretically be 100%. The antenna impedance is a function of its structural geometry, and is easily designed for impedance matching to a power source.