Abstract: An optical system, for example in a microlithographic projection exposure apparatus, comprises a mirror and a temperature-regulating device. The mirror has an optical effective surface and a mirror substrate. A plurality of temperature-regulating zones are arranged in the mirror substrate. The temperature-regulating device is used to adjust the temperatures present in each of the temperature-regulating zones independently of one another. The temperature-regulating zones are arranged in at least two planes at different distances from the optical effective surface. The temperature-regulating zones in the at least two planes are configured as cooling channels through which, independently of one another, a cooling fluid at a variably adjustable cooling fluid temperature is able to flow. A method for operating such an optical system is provided.

Abstract: Disclosed are an optical system, in particular for microlithography, and a method for operating an optical system. According to one disclosed aspect, the optical system includes at least one mirror (100, 500, 600) having an optical effective surface (101, 501, 601) and a mirror substrate (110, 510, 610), wherein at least one cooling channel (115, 515, 615) in which a cooling fluid is configured to flow is arranged in the mirror substrate, for dissipating heat that is generated in the mirror substrate due to absorption of electromagnetic radiation incident from a light source on the optical effective surface, and a unit (135, 535, 635) to adjust the temperature and/or the flow rate of the cooling fluid either dependent on a measured quantity that characterizes the thermal load in the mirror substrate or dependent on an estimated/expected thermal load in the mirror substrate for a given power of the light source.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: The invention relates to an optical arrangement comprising: at least one optical element comprising an optical surface and a substrate, wherein the substrate is formed from a material whose temperature-dependent coefficient of thermal expansion at a zero crossing temperature ?TZC=TZC?Tref related to a reference temperature Tref is equal to zero, wherein the optical surface has, during the operation of the optical arrangement, a location-dependent temperature distribution ?T(x, y) that is dependent on a local irradiance (5a), is related to the reference temperature Tref and has an average temperature ?Tav, a minimum temperature ?Tmin and a maximum temperature ?Tmax, wherein the average temperature ?Tav is less than the average value 1/2 (?Tmax+?Tmin) formed from the minimum temperature ?Tmin and the maximum temperature ?Tmax, and wherein the zero crossing temperature ?TZC is greater than the average temperature ?Tav.

Abstract: A mirror (1a; 1a?; 1b; 1b; 1c; 1c?) with a substrate (S) and a layer arrangement configured such that light (32) having a wavelength below 250 nm and incident on the mirror at at least an angle of incidence of between 0° and 30° is reflected with more than 20% of its intensity. The layer arrangement has at least one surface layer system (P??) having a periodic sequence of at least two periods (P3) of individual layers, wherein the periods (P3) include a high refractive index layer (H??) and a low refractive index layer (L??). The layer arrangement has at least one graphene layer. Use of graphene (G, SPL, B) on optical elements reduces surface roughness to below 0.1 nm rms HSFR and/or protects the EUV element against a radiation-induced volume change of more than 1%. Graphene is also employed as a barrier layer to prevent layer interdiffusion.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: The disclosure concerns an arrangement for mirror temperature measurement and/or thermal actuation of a mirror in a microlithographic projection exposure apparatus. The mirror has an optical effective surface and at least one access passage extending from a surface of the mirror, that does not correspond to the optical effective surface, in the direction of the effective surface. The arrangement is designed for mirror temperature measurement and/or thermal actuation of the mirror via electromagnetic radiation which is propagated along the access passage. The electromagnetic radiation is reflected a plurality of times within the access passage.

Abstract: An imaging optics includes a plurality of mirrors which reflect imaging light to image an object field in an object plane into an image field in an image plane. A mirror body of at least one of the mirrors has a through-opening for the imaging light to pass through. The through-opening has an internal region of a smallest opening width in the mirror body. The through-opening expands from the internal region towards both edge regions of the mirror body. A disturbing influence of unused light portions is reduced or eliminated completely.

Abstract: The invention relates to an optical arrangement comprising: at least one optical element comprising an optical surface and a substrate, wherein the substrate is formed from a material whose temperature-dependent coefficient of thermal expansion at a zero crossing temperature ?TZC=TZC?Tref related to a reference temperature Tref is equal to zero, wherein the optical surface has, during the operation of the optical arrangement, a location-dependent temperature distribution ?T(x, y) that is dependent on a local irradiance (5a), is related to the reference temperature Tref and has an average temperature ?Tav, a minimum temperature ?Tmin and a maximum temperature ?Tmax, wherein the average temperature ?Tav is less than the average value 1/2 (?Tmax+?Tmin) formed from the minimum temperature ?Tmin and the maximum temperature ?Tmax, and wherein the zero crossing temperature ?TZC is greater than the average temperature ?Tav.

Abstract: A mirror (1a; 1a?; 1b; 1b?; 1c; 1c?) with a substrate (S) and a layer arrangement configured such that light (32) having a wavelength below 250 nm and incident on the mirror at at least an angle of incidence of between 0° and 30° is reflected with more than 20% of its intensity. The layer arrangement has at least one surface layer system (P??) having a periodic sequence of at least two periods (P3) of individual layers, wherein the periods (P3) include a high refractive index layer (H??) and a low refractive index layer (L??). The layer arrangement has at least one graphine layer. Use of graphene (G, SPL, B) on optical elements reduces surface roughness to below 0.1 nm rms HSFR and/or protects the EUV element against a radiation-induced volume change of more than 1%. Graphene is also employed as a barrier layer to prevent layer interdiffusion.

Abstract: The disclosure concerns an arrangement for mirror temperature measurement and/or thermal actuation of a mirror in a microlithographic projection exposure apparatus. The mirror has an optical effective surface and at least one access passage extending from a surface of the mirror, that does not correspond to the optical effective surface, in the direction of the effective surface. The arrangement is designed for mirror temperature measurement and/or thermal actuation of the mirror via electromagnetic radiation which is propagated along the access passage. The electromagnetic radiation is reflected a plurality of times within the access passage.

Abstract: An imaging optics includes a plurality of mirrors which reflect imaging light to image an object field in an object plane into an image field in an image plane. A mirror body of at least one of the mirrors has a through-opening for the imaging light to pass through. The through-opening has an internal region of a smallest opening width in the mirror body. The through-opening expands from the internal region towards both edge regions of the mirror body. A disturbing influence of unused light portions is reduced or eliminated completely.

Abstract: An optical element embodied as a front surface mirror or as a lens wherein the optical element has at least one partial region composed of a material which has the property that the material is cooled upon irradiation with suitable excitation light.