Abstract: Absolute electrical parameter values using reflected microwaves are achieved through measurement of a sample that completely fills the cross section of the waveguide. A test sample holder for a wafer shaped sample employs a choke flange type plate and a backing plate for the wafer. Semiconductor sheet resistivity and mobility values are measured.

Abstract: A semiconductor device of the ballistic type, wherein the carrier transport in the body of the device from one electrode to the other takes place essentially free of collisions, is fabricated with a semiconductor body having a long mean-free path, a body width between ohmic electrodes that is less than or equal to the product of the velocity of a carrier and the time to a collision, but more than the distance that will permit quantum mechanical tunnelling, an impressed voltage less than required for an intervalley carrier transition and having the ohmic external contact on each surface of the body free of any barrier to carrier flow. A ballistic type triode device is provided with a current modulating electrode included within the body of the device.