Abstract: A semiconductor device is optically phase-locked by utilizing (1) the Burstein shift in differently doped semiconductor layers and injecting light having an energy level lower than the absorption edge of the heavily doped layer in which optical absorption is not desired and higher than the more lightly doped region where it is desired; and (2) the internal photoemission and injecting light having an energy level lower than the band gap of the semiconductor.

Abstract: Pyroelectric thermal detector with decreased susceptibility to vibrational noise is formed of a wafer of pyroelectric material having a thin central region supported and surrounded by a thicker rim. On the central region deposited electrodes define active detecting regions that are mirror images of each other across a line separating them. The active regions may be oppositely polarized domains electrically connected in parallel, or a continuous domain with the active regions electrically connected in series opposition. The deposited electrodes are brought out to the rim for external connection. The rim is everywhere spaced at least one thermal diffusion length from either active region. Mechanical support for the wafer is connected to the rim, is symmetrically disposed with respect to the line separating the active detecting regions, and is in contact with the rim over at least 75 percent of its linear extent.