Abstract: Examples described herein generally relate to apparatus and methods for rapid thermal processing (RTP) of a substrate. In one example, a process chamber includes chamber body, a window disposed on a first portion of the chamber body, a chamber bottom, and a shield disposed on a second portion of the chamber body. The shield has a flat surface facing the window to reduce reflected radiant energy to a back side of a substrate disposed in the process chamber during operation. The process chamber further includes an edge support for supporting the substrate and a cooling member disposed on the chamber bottom. The cooling member is disposed in proximity of the edge support to cool the edge support during low temperature operation in order to improve the temperature uniformity of the substrate.

Abstract: Embodiments of the disclosure generally relate to a semiconductor processing chamber. In one embodiment, semiconductor processing chamber is disclosed and includes a chamber body having a bottom and a sidewall defining an interior volume, the sidewall having a substrate transfer port formed therein, and one or more absorber bodies positioned in the interior volume in a position opposite of the substrate transfer port.

Abstract: A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for visual lamp failure detection in a processing chamber, such as an RTP chamber. Visual feedback is facilitated through the use of a wide-angle lens positioned to view lamps within the process chamber. The wide-angle lens is positioned within a probe and secured using a spring in order to withstand high temperature processing. A camera coupled to the lens is adapted to capture an image of the lamps within the process chamber. The captured image of the lamps is then compared to a reference image to determine if the lamps are functioning as desired.

Abstract: A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

Abstract: A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

Abstract: A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for visual lamp failure detection in a processing chamber, such as an RTP chamber. Visual feedback is facilitated through the use of a wide-angle lens positioned to view lamps within the process chamber. The wide-angle lens is positioned within a probe and secured using a spring in order to withstand high temperature processing. A camera coupled to the lens is adapted to capture an image of the lamps within the process chamber. The captured image of the lamps is then compared to a reference image to determine if the lamps are functioning as desired.

Abstract: Implementations described herein provide for thermal substrate processing apparatus including two thermal process chambers, each defining a process volume, and a substrate support disposed within each process volume. One or more remote plasma sources may be in fluid communication with the process volumes and the remote plasma sources may be configured to deliver a plasma to the process volumes. Various arrangements of remote plasma sources and chambers are described.

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for visual lamp failure detection in a processing chamber, such as an RTP chamber. Visual feedback is facilitated through the use of a wide-angle lens positioned to view lamps within the process chamber. The wide-angle lens is positioned within a probe and secured using a spring in order to withstand high temperature processing. A camera coupled to the lens is adapted to capture an image of the lamps within the process chamber. The captured image of the lamps is then compared to a reference image to determine if the lamps are functioning as desired.

Abstract: Methods and apparatus for processing substrates and controlling the heating and cooling of substrates are described. A radiation source providing radiation in a first range of wavelengths heats the substrate within a predetermined temperature range, the substrate being absorptive of radiation in a second range of wavelengths within the first range of wavelengths and within the predetermined temperature rang. A filter prevents at least a portion of radiation within the second wavelength range from reaching the substrate.

Abstract: Embodiments of the present disclosure provide a cover assembly that includes a cover having a plurality of ports, and each port has a diameter of less than 1 mm, such as between about 0.1 mm to about 0.9 mm. The cover may be disposed between a device side surface of a substrate and a reflector plate, which are all disposed within a thermal processing chamber. The presence of the cover having the plurality of small ports within the thermal processing chamber will improve thermal uniformity over time after processing doped substrates.

Abstract: Embodiments of the present disclosure provide a cover assembly that includes a cover disposed between a device side surface of a substrate and a reflector plate, which are disposed within a thermal processing chamber. The presence of the cover between the device side surface of a substrate and a reflector plate has many advantages over conventional thermal processing chamber designs, which include an improved temperature uniformity during processing, a reduced chamber down time and an improved cost-of-ownership of the processes performed in the thermal processing chamber. In some configurations, the cover includes two or more ports that are formed therein and are positioned to deliver a gas, from a space formed between the reflector plate and the cover, to desired regions of the substrate during processing to reduce the temperature variation across the substrate.

Abstract: A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

Abstract: A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

Abstract: A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.

Abstract: A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

Abstract: Embodiments of the present disclosure provide a cover assembly that includes a cover disposed between a device side surface of a substrate and a reflector plate, which are disposed within a thermal processing chamber. The presence of the cover between the device side surface of a substrate and a reflector plate has many advantages over conventional thermal processing chamber designs, which include an improved temperature uniformity during processing, a reduced chamber down time and an improved cost-of-ownership of the processes performed in the thermal processing chamber. In some configurations, the cover includes two or more ports that are formed therein and are positioned to deliver a gas, from a space formed between the reflector plate and the cover, to desired regions of the substrate during processing to reduce the temperature variation across the substrate.

Abstract: Embodiments of the present invention generally relate to methods and apparatus for monitoring substrate temperature uniformity in a processing chamber, such as an RTP chamber. Substrate temperature is monitored using an infrared camera coupled to a probe having a wide-angle lens. The wide-angle lens is positioned within the probe and secured using a spring, and is capable of withstanding high temperature processing. The wide angle lens facilities viewing of substantially the entire surface of the substrate in a single image. The image of the substrate can be compared to a reference image to facilitate lamp adjustments, if necessary, to effect uniform heating of the substrate.

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for visual lamp failure detection in a processing chamber, such as an RTP chamber. Visual feedback is facilitated through the use of a wide-angle lens positioned to view lamps within the process chamber. The wide-angle lens is positioned within a probe and secured using a spring in order to withstand high temperature processing. A camera coupled to the lens is adapted to capture an image of the lamps within the process chamber. The captured image of the lamps is then compared to a reference image to determine if the lamps are functioning as desired.