Abstract: In one embodiment, the disclosed apparatus is at least one gas-primitive substrate for use in a gas-delivery box. Each of the at least one gas-primitive substrates has at least one location on which a gas-delivery component is to be mounted. The at least one location has at least a gas-delivery component inlet port and a gas-delivery component outlet port formed within a body of the gas-primitive substrate. At least one first pair of bore holes comprising a gas-flow path is formed on an upstream side and a downstream side, respectively, of the location of the gas-delivery component. Other apparatuses and systems are disclosed.

Abstract: Apparatus and method for forming thin layers on a substrate are provided. A processing chamber has a gas delivery assembly that comprises a lid with a cap portion and a covering member that together define an expanding channel at a central portion of the lid, the covering member having a tapered bottom surface extending from the expanding channel to a peripheral portion of the covering member. Gas conduits are coupled to the expanding channel and positioned at an angle from a center of the expanding channel to form a circular gas flow through the expanding channel. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

Abstract: Embodiments described herein provide ampoule assemblies to contain, store, or dispense chemical precursors. In one embodiment, an ampoule assembly is provided which includes an ampoule containing a first material layer disposed on the outside of the ampoule and a second material layer disposed over the first material layer, wherein the first material layer is thermally more conductive than the second material layer, an inlet line in fluid communication with the ampoule and containing a first manual shut-off valve disposed therein, an outlet line in fluid communication with the ampoule and containing a second manual shut-off valve disposed therein, and a first bypass line connected between the inlet line and the outlet line. In some embodiments, the ampoule assembly may contain disconnect fittings. In other embodiments, the first bypass line has a shut-off valve disposed therein to fluidly couple or decouple the inlet line and the outlet line.

Abstract: Apparatus and method for forming thin layers on a substrate are provided. A processing chamber has a gas delivery assembly that comprises a lid with a cap portion and a covering member that together define an expanding channel at a central portion of the lid, the covering member having a tapered bottom surface extending from the expanding channel to a peripheral portion of the covering member. Gas conduits are coupled to the expanding channel and positioned at an angle from a center of the expanding channel to form a circular gas flow through the expanding channel. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

Abstract: An apparatus and method for performing a cyclical layer deposition process, such as atomic layer deposition is provided. In one aspect, the apparatus includes a substrate support having a substrate receiving surface, and a chamber lid comprising a tapered passageway extending from a central portion of the chamber lid and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The apparatus also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve.

Abstract: Apparatus and method for forming thin layers on a substrate are provided. A processing chamber has a gas delivery assembly that comprises a lid with a cap portion and a covering member that together define an expanding channel at a central portion of the lid, the covering member having a tapered bottom surface extending from the expanding channel to a peripheral portion of the covering member. Gas conduits are coupled to the expanding channel and positioned at an angle from a center of the expanding channel to form a circular gas flow through the expanding channel, The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

Abstract: Embodiments are related to ampoule assemblies containing bypass lines and valves. In one embodiment, ampoule assembly is provided which includes inlet and outlet lines coupled with and in fluid communication to an ampoule body, a bypass line connected between the inlet and outlet lines and containing a bypass valve disposed therein. The ampoule assembly further contains a shut-off valve disposed in the inlet line between the ampoule body and a connection point of the bypass line and the inlet line, a shut-off valve disposed in the outlet line between the ampoule body and a connection point of the bypass line and the outlet line, another shut-off valve disposed in the inlet line between the ampoule body and a disconnect fitting disposed on the inlet line, and another shut-off valve disposed in the outlet line between the ampoule body and a disconnect fitting disposed on the outlet line.

Abstract: Embodiments as described herein provide an apparatus and a method for performing an atomic layer deposition process. In one embodiment, a deposition chamber assembly contains a substrate support having a substrate receiving surface, and a chamber lid containing a tapered passageway extending from a central portion of the chamber lid, and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The system also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve. In one example, the gas source is a gas box assembly which is attached to the deposition chamber by at least one disconnect fitting and contains an inlet tube directed away from the gas outlet.

Abstract: Embodiments described herein provide ampoule assemblies to contain, store, or dispense chemical precursors. In one embodiment, an ampoule assembly is provided which includes an ampoule containing a first material layer disposed on the outside of the ampoule and a second material layer disposed over the first material layer, wherein the first material layer is thermally more conductive than the second material layer, an inlet line in fluid communication with the ampoule and containing a first manual shut-off valve disposed therein, an outlet line in fluid communication with the ampoule and containing a second manual shut-off valve disposed therein, and a first bypass line connected between the inlet line and the outlet line. In some embodiments, the ampoule assembly may contain disconnect fittings. In other embodiments, the first bypass line has a shut-off valve disposed therein to fluidly couple or decouple the inlet line and the outlet line.

Abstract: Embodiments are related to ampoule assemblies containing bypass lines and valves. In one embodiment, ampoule assembly is provided which includes inlet and outlet lines coupled with and in fluid communication to an ampoule body, a bypass line connected between the inlet and outlet lines and containing a bypass valve disposed therein. The ampoule assembly further contains a shut-off valve disposed in the inlet line between the ampoule body and a connection point of the bypass line and the inlet line, a shut-off valve disposed in the outlet line between the ampoule body and a connection point of the bypass line and the outlet line, another shut-off valve disposed in the inlet line between the ampoule body and a disconnect fitting disposed on the inlet line, and another shut-off valve disposed in the outlet line between the ampoule body and a disconnect fitting disposed on the outlet line.

Abstract: Embodiments described herein provide ampoule assemblies to contain, store, or dispense chemical precursors. In one embodiment, an ampoule assembly is provided which includes an ampoule containing a first material layer disposed on the outside of the ampoule and a second material layer disposed over the first material layer, wherein the first material layer is thermally more conductive than the second material layer, an inlet line in fluid communication with the ampoule and containing a first manual shut-off valve disposed therein, an outlet line in fluid communication with the ampoule and containing a second manual shut-off valve disposed therein, and a first bypass line connected between the inlet line and the outlet line. In some embodiments, the ampoule assembly may contain disconnect fittings. In other embodiments, the first bypass line has a shut-off valve disposed therein to fluidly couple or decouple the input line and the outlet line.

Abstract: An ampoule assembly is configured with a bypass line and valve to allow the purging of the lines and valves connected to the ampoule. The ampoule assembly, in one embodiment, includes an ampoule, an inlet line, an outlet line, and a bypass line connected between the inlet line and the outlet line, the bypass line having a shut-off valve disposed therein to fluidly couple or decouple the inlet line and the outlet line. The shut-off valve disposed in the bypass line may be remotely controllable. Also, additional remotely controllable shut-off valves may be provided in the inlet and the outlet lines.

Abstract: Embodiments described herein provide ampoule assemblies to contain, store, or dispense chemical precursors. In one embodiment, an ampoule assembly is provided which includes an ampoule containing a first material layer disposed on the outside of the ampoule and a second material layer disposed over the first material layer, wherein the first material layer is thermally more conductive than the second material layer, an inlet line in fluid communication with the ampoule and containing a first manual shut-off valve disposed therein, an outlet line in fluid communication with the ampoule and containing a second manual shut-off valve disposed therein, and a first bypass line connected between the inlet line and the outlet line. In some embodiments, the ampoule assembly may contain disconnect fittings. In other embodiments, the first bypass line has a shut-off valve disposed therein to fluidly couple or decouple the input line and the outlet line.

Abstract: Embodiments as described here provide an apparatus and a method for performing an atomic layer deposition process. In one embodiment, a deposition chamber assembly contains a substrate support having a substrate receiving surface, and a chamber lid containing a tapered passageway extending from a central portion of the chamber lid and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The system also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve. In one example, the gas source is an ampoule assembly which is attached to the deposition chamber by at least one disconnect fitting and contains an inlet tube directed away from the gas outlet.

Abstract: In one embodiment, a method for depositing a material on a substrate during an atomic layer deposition (ALD) process is provided which includes positioning the substrate on a substrate support within a process chamber, flowing a carrier gas into an expanding channel to form a circular flow of the carrier gas, exposing the substrate to the circular flow, pulsing a first reactant gas into the circular flow, and depositing a material onto the substrate. The method further provides that the process chamber has a chamber lid containing a centrally positioned expanding channel, a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid, at least two gas inlets in fluid communication with the expanding channel, and at least two conduits positioned to provide a gas flow having a circular pattern within the expanded channel.

Abstract: An ampoule assembly is configured with a bypass line and valve to allow the purging of the lines and valves connected to the ampoule. The ampoule assembly, in one embodiment, includes an ampoule, an inlet line, an outlet line, and a bypass line connected between the inlet line and the outlet line, the bypass line having a shut-off valve disposed therein to fluidly couple or decouple the inlet line and the outlet line. The shut-off valve disposed in the bypass line may be remotely controllable. Also, additional remotely controllable shut-off valves may be provided in the inlet and the outlet lines.

Abstract: In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate having an underlying tungsten layer within a process chamber and depositing a tungsten-containing barrier layer on the underlying tungsten layer during a cyclical layer deposition process. The tungsten-containing barrier layer contains a refractory metal nitride material. The method further provides depositing a seed layer on the tungsten-containing barrier layer during a vapor deposition process and depositing a bulk tungsten layer on the seed layer during a chemical vapor deposition process.

Abstract: One embodiment of the gas delivery assembly comprises a covering member having an expanding channel at a central portion of the covering member and having a bottom surface extending from the expanding channel to a peripheral portion of the covering member. One or more gas conduits are coupled to the expanding channel in which the one or more gas conduits are positioned at an angle from a center of the expanding channel. One embodiment of a chamber comprises a substrate support having a substrate receiving surface. The chamber further includes a chamber lid having a passageway at a central portion of the chamber lid and a tapered bottom surface extending from the passageway to a peripheral portion of the chamber lid. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. In one aspect, the bottom surface of the chamber lid may be tapered.

Abstract: One embodiment of the gas delivery assembly comprises a covering member having an expanding channel at a central portion of the covering member and having a bottom surface extending from the expanding channel to a peripheral portion of the covering member. One or more gas conduits are coupled to the expanding channel in which the one or more gas conduits are positioned at an angle from a center of the expanding channel. One embodiment of a chamber comprises a substrate support having a substrate receiving surface. The chamber further includes a chamber lid having a passageway at a central portion of the chamber lid and a tapered bottom surface extending from the passageway to a peripheral portion of the chamber lid. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. In one aspect, the bottom surface of the chamber lid may be tapered.

Abstract: An apparatus and method for performing a cyclical layer deposition process, such as atomic layer deposition is provided. In one aspect, the apparatus includes a substrate support having a substrate receiving surface, and a chamber lid comprising a tapered passageway extending from a central portion of the chamber lid and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The apparatus also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve.