Abstract: An optical package for use with a laser diode in high speed applications. The package comprises a metallic housing with a multilayer ceramic (MLC) insert disposed through a sidewall thereof. The MLC insert is utilized to form a microstrip transmission line of a bandwidth sufficient to couple a high frequency signal source to the laser. A number of conductive vias are disposed through the thickness of the MLC insert at the package wall to serve as electric field shorts within the insert and improve the frequency response of the microstrip. A pair of such MLC inserts may be disposed through opposing sidewalls of the package and used to provide a conventional "butterfly" configuration, while preserving the integrity of the microstrip interconnection.

Abstract: A silicon-based laser mounting structure is disclosed which provides improved interconnection between a semiconductor optical device, such as a laser, and an external high frequency modulation current source, by reducing the presence of parasitic inductive elements in the interconnecting network. The structure includes a stripline transmission path formed by depositing metal conductive strips on the top and bottom surfaces of a silicon substrate. The conductive strips are coupled at one end to the external modulation current source. A thin film resistor is deposited between the second end of the top conductive strip and the semiconductor optical device. This thin film resistor is utilized to provide impedance matching between the optical device and the stripline. That is, for a laser with an impedance Z.sub.L, and a stripline designed to have an impedance Z.sub.S, the resistance R is chosen such that R+Z.sub.L =Z.sub.S.

Abstract: A silicon-based laser mounting structure is disclosed which provides improved interconnection between a semiconductor optical device, such as a laser, and an external high frequency modulation current source, by reducing the presence of parasitic inductive elements in the interconnecting network. The structure includes a stripline transmission path formed by depositing metal conductive strips on the top and bottom surfaces of a silicon substrate. The conductive strips are coupled at one end to the external modulation current source. A thin film resistor is deposited between the second end of the top conductive strip and the semiconductor optical device. This thin film resistor is utilized to provide impedance matching between the optical device and the stripline. That is, for a laser with an impedance Z.sub.L, and a stripline designed to have an impedance Z.sub.S, the resistance R is chosen such that R+Z.sub.L =Z.sub.S.

Abstract: A semiconductor laser mount is disclosed for use in high frequency (>500 Mb/s) applications. The mount comprises a stripline transmission path and resistive element formed in series with the optical device. Since the current sources used to modulate optical devices at these bit rates have a large impedance relative to that of the optical devices, the stripline is used as an impedance controlling network to provide frequency independent coupling from the signal source to the device and the resistive element is used to compensate the variation of the impedance of the device to essentially match that of the stripline. Since the impedance of individual optical devices may vary, the resistive element is sized to provide optimum matching. Both the stripline and resistive element are integrated with the mount material to form a monolithic structure.