Abstract: The invention concerns a method of electrodeposition onto a semiconductor. The surface lattice structure of the semiconductor is first disturbed, by an ion beam or otherwise, and then the semiconductor is immersed in an electroplating solution. When the semiconductor is irradiated with light of sufficiently short wavelength to generate free charge carriers therein, ions from the solution are deposited on the semiconductor surface. Metal ions are deposited by this technique only on the disturbed regions of the semiconductor surface, providing an excellent selective deposition process. Multiple layers may be deposited, and even different metals on different regions of the semiconductor surface. The method is particularly suited to the production of solid slate devices such as, for example, gallium arsenide field effect transistors.