Patents by Inventor Norman S. Chen

Norman S. Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multiple patterning process for forming trenches or holes using stitched assist features
    Patent number: 8993224
    Abstract: One illustrative method disclosed herein involves identifying an overall target pattern comprised of at least one hole-type feature, decomposing the overall target pattern into at least a first sub-target pattern and a second sub-target pattern, wherein the first sub-target pattern and the second sub-target pattern each comprise at least one common hole-type feature, generating a first set of mask data information corresponding to the first sub-target pattern, and generating a second set of mask data information corresponding to the second sub-target pattern.
    Type: Grant
    Filed: May 23, 2014
    Date of Patent: March 31, 2015
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Yuyang Sun, Norman S. Chen, Jian Liu
  • MULTIPLE PATTERNING PROCESS FOR FORMING TRENCHES OR HOLES USING STITCHED ASSIST FEATURES
    Publication number: 20140253902
    Abstract: One illustrative method disclosed herein involves identifying an overall target pattern comprised of at least one hole-type feature, decomposing the overall target pattern into at least a first sub-target pattern and a second sub-target pattern, wherein the first sub-target pattern and the second sub-target pattern each comprise at least one common hole-type feature, generating a first set of mask data information corresponding to the first sub-target pattern, and generating a second set of mask data information corresponding to the second sub-target pattern.
    Type: Application
    Filed: May 23, 2014
    Publication date: September 11, 2014
    Applicant: GLOBALFOUNDRIES Inc.
    Inventors: Yuyang Sun, Norman S. Chen, Jian Liu
  • Multiple patterning process for forming trenches or holes using stitched assist features
    Patent number: 8782571
    Abstract: One illustrative method disclosed herein involves identifying an overall target pattern comprised of at least one hole-type feature, decomposing the overall target pattern into at least a first sub-target pattern and a second sub-target pattern, wherein the first sub-target pattern and the second sub-target pattern each comprise at least one common hole-type feature, generating a first set of mask data information corresponding to the first sub-target pattern, and generating a second set of mask data information corresponding to the second sub-target pattern.
    Type: Grant
    Filed: March 8, 2012
    Date of Patent: July 15, 2014
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Yuyang Sun, Norman S. Chen, Jian Liu
  • MULTIPLE PATTERNING PROCESS FOR FORMING TRENCHES OR HOLES USING STITCHED ASSIST FEATURES
    Publication number: 20130236836
    Abstract: One illustrative method disclosed herein involves identifying an overall target pattern comprised of at least one hole-type feature, decomposing the overall target pattern into at least a first sub-target pattern and a second sub-target pattern, wherein the first sub-target pattern and the second sub-target pattern each comprise at least one common hole-type feature, generating a first set of mask data information corresponding to the first sub-target pattern, and generating a second set of mask data information corresponding to the second sub-target pattern.
    Type: Application
    Filed: March 8, 2012
    Publication date: September 12, 2013
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Yuyang Sun, Norman S. Chen, Jian Liu
  • OPTICAL PROXIMITY CORRECTION METHODS FOR MASKS TO BE USED IN MULTIPLE PATTERNING PROCESSES
    Publication number: 20130232456
    Abstract: Disclosed herein are various OPC methods as it relates to the formation of masks to be used in multiple patterning processes, such as double patterning processes, and to the use of such masks during the manufacture of semiconductor devices. One illustrative method disclosed herein includes the steps of decomposing an initial overall target pattern into at least a first sub-target pattern and a second sub-target pattern, wherein each of the first and second sub-target patterns comprise at least one feature, and performing a first optical proximity correction process on the first sub-target pattern, wherein a position of at least one feature of the second sub-target pattern in the initial overall target pattern is considered when performing the first optical proximity correction process.
    Type: Application
    Filed: March 2, 2012
    Publication date: September 5, 2013
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Chidambaram G. Kallingal, Norman S. Chen, Jian Liu