Patents by Inventor Norman Tam
Norman Tam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220298620Abstract: Enhanced oxidation with hydrogen radical pretreatment is described. In an example, a method of oxidizing a substrate includes positioning a substrate in a processing volume of a processing chamber, generating hydrogen radicals using a remote plasma source fluidly coupled to the processing chamber, exposing a surface of the substrate to the generated hydrogen radicals, and, subsequent to exposing the substrate to the generated hydrogen radicals, oxidizing the surface of the substrate to form an oxide layer on the surface of the substrate.Type: ApplicationFiled: February 7, 2022Publication date: September 22, 2022Inventors: Matthew Spuller, Pradeep Sampath Kumar, Shashank Sharma, Norman Tam
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Patent number: 10128144Abstract: Embodiments of the disclosure generally relate to a support cylinder used in a thermal process chamber. In one embodiment, the support cylinder includes a hollow cylindrical body comprising an inner peripheral surface, an outer peripheral surface parallel to the inner peripheral surface, wherein the inner peripheral surface and the outer peripheral surface extend along a direction parallel to a longitudinal axis of the support cylinder, and a lateral portion extending radially from the outer peripheral surface to the inner peripheral surface, wherein the lateral portion comprises a first end having a first beveled portion, a first rounded portion, and a first planar portion connecting the first beveled portion and the first rounded portion, and a second end opposing the first end, the second end having a second beveled portion, a second rounded portion, and a second planar portion connecting the second beveled portion and the second rounded portion.Type: GrantFiled: May 19, 2017Date of Patent: November 13, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Mehran Behdjat, Aaron Muir Hunter, Joseph M. Ranish, Norman Tam, Jeffrey Tobin, Jiping Li, Martin Tran
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Publication number: 20170263493Abstract: Embodiments of the disclosure generally relate to a support cylinder used in a thermal process chamber. In one embodiment, the support cylinder includes a hollow cylindrical body comprising an inner peripheral surface, an outer peripheral surface parallel to the inner peripheral surface, wherein the inner peripheral surface and the outer peripheral surface extend along a direction parallel to a longitudinal axis of the support cylinder, and a lateral portion extending radially from the outer peripheral surface to the inner peripheral surface, wherein the lateral portion comprises a first end having a first beveled portion, a first rounded portion, and a first planar portion connecting the first beveled portion and the first rounded portion, and a second end opposing the first end, the second end having a second beveled portion, a second rounded portion, and a second planar portion connecting the second beveled portion and the second rounded portion.Type: ApplicationFiled: May 19, 2017Publication date: September 14, 2017Inventors: Mehran BEHDJAT, Aaron Muir HUNTER, Joseph M. RANISH, Norman TAM, Jeffrey TOBIN, Jiping LI, Martin TRAN
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Patent number: 9659809Abstract: Embodiments of the disclosure generally relate to a support cylinder used in a thermal process chamber. In one embodiment, the support cylinder includes a hollow cylindrical body comprising an inner peripheral surface, an outer peripheral surface parallel to the inner peripheral surface, wherein the inner peripheral surface and the outer peripheral surface extend along a direction parallel to a longitudinal axis of the support cylinder, and a lateral portion extending radially from the outer peripheral surface to the inner peripheral surface, wherein the lateral portion comprises a first end having a first beveled portion, a first rounded portion, and a first planar portion connecting the first beveled portion and the first rounded portion, and a second end opposing the first end, the second end having a second beveled portion, a second rounded portion, and a second planar portion connecting the second beveled portion and the second rounded portion.Type: GrantFiled: June 21, 2016Date of Patent: May 23, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Mehran Behdjat, Aaron Muir Hunter, Joseph M. Ranish, Norman Tam, Jeffrey Tobin, Jiping Li, Martin Tran
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Publication number: 20160300752Abstract: Embodiments of the disclosure generally relate to a support cylinder used in a thermal process chamber. In one embodiment, the support cylinder includes a hollow cylindrical body comprising an inner peripheral surface, an outer peripheral surface parallel to the inner peripheral surface, wherein the inner peripheral surface and the outer peripheral surface extend along a direction parallel to a longitudinal axis of the support cylinder, and a lateral portion extending radially from the outer peripheral surface to the inner peripheral surface, wherein the lateral portion comprises a first end having a first beveled portion, a first rounded portion, and a first planar portion connecting the first beveled portion and the first rounded portion, and a second end opposing the first end, the second end having a second beveled portion, a second rounded portion, and a second planar portion connecting the second beveled portion and the second rounded portion.Type: ApplicationFiled: June 21, 2016Publication date: October 13, 2016Inventors: Mehran BEHDJAT, Aaron Muir HUNTER, Joseph M. RANISH, Norman TAM, Jeffrey TOBIN, Jiping LI, Martin TRAN
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Patent number: 9385004Abstract: Embodiments of the disclosure generally relate to a support cylinder used in a thermal process chamber. In one embodiment, the support cylinder comprises a ring body having an inner peripheral surface and an outer peripheral surface, wherein the ring body comprises an opaque quartz glass material and wherein the ring body is coated with an optical transparent layer. The optical transparent layer has a coefficient of thermal expansion that is substantially matched or similar to the opaque quartz glass material to reduce thermal expansion mismatch that may cause thermal stress under high thermal loads. In one example, the opaque quartz glass material is synthetic black quartz and the optical transparent layer comprises a clear fused quartz material.Type: GrantFiled: June 6, 2014Date of Patent: July 5, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Mehran Behdjat, Aaron Muir Hunter, Joseph M. Ranish, Norman Tam, Jeffrey Tobin, Jiping Li, Martin Tran
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Publication number: 20150050819Abstract: Embodiments of the disclosure generally relate to a support cylinder used in a thermal process chamber. In one embodiment, the support cylinder comprises a ring body having an inner peripheral surface and an outer peripheral surface, wherein the ring body comprises an opaque quartz glass material and wherein the ring body is coated with an optical transparent layer. The optical transparent layer has a coefficient of thermal expansion that is substantially matched or similar to the opaque quartz glass material to reduce thermal expansion mismatch that may cause thermal stress under high thermal loads. In one example, the opaque quartz glass material is synthetic black quartz and the optical transparent layer comprises a clear fused quartz material.Type: ApplicationFiled: June 6, 2014Publication date: February 19, 2015Inventors: Mehran BEHDJAT, Aaron Muir HUNTER, Joseph M. RANISH, Norman TAM, Jeffrey TOBIN, Jiping LI, Martin TRAN
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Patent number: 8608853Abstract: Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.Type: GrantFiled: November 15, 2011Date of Patent: December 17, 2013Assignee: Applied Materials, Inc.Inventors: Ming-Kuei (Michael) Tseng, Norman Tam, Yoshitaka Yokota, Agus Tjandra, Robert Navasca, Mehran Behdjat, Sundar Ramamurthy, Kedarnath Sangam, Alexander N. Lerner
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Patent number: 8546271Abstract: A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.Type: GrantFiled: May 27, 2011Date of Patent: October 1, 2013Assignee: Applied Materials, Inc.Inventors: Yoshitaka Yokota, Norman Tam, Balasubramanian Ramachandran, Martin John Ripley
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Patent number: 8207044Abstract: Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.Type: GrantFiled: May 18, 2011Date of Patent: June 26, 2012Assignee: Applied Materials, Inc.Inventors: Rajesh Mani, Norman Tam, Timothy W. Weidman, Yoshitaka Yokota
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Publication number: 20120058648Abstract: Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.Type: ApplicationFiled: November 15, 2011Publication date: March 8, 2012Inventors: Ming-Kuei (Michael) Tseng, Norman Tam, Yoshitaka Yokota, Agus Tjandra, Robert Navasca, Mehran Behdjat, Sundar Ramamurthy, Kedarnath Sangam, Alexander N. Lerner
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Patent number: 8056500Abstract: Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.Type: GrantFiled: December 19, 2008Date of Patent: November 15, 2011Assignee: Applied Materials, Inc.Inventors: Ming-Kuei (Michael) Tseng, Norman Tam, Yoshitaka Yokota, Agus Tjandra, Robert Navasca, Mehran Behdjat, Sundar Ramamurthy, Kedarnath Sangam, Alexander N. Lerner
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Publication number: 20110230060Abstract: A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.Type: ApplicationFiled: May 27, 2011Publication date: September 22, 2011Inventors: Yoshitaka Yokota, Norman Tam, Balasubramanian Ramachandran, Martin John Ripley
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Publication number: 20110217850Abstract: Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.Type: ApplicationFiled: May 18, 2011Publication date: September 8, 2011Applicant: APPLIED MATERIALS, INC.Inventors: RAJESH MANI, NORMAN TAM, TIMOTHY W. WEIDMAN, YOSHITAKA YOKOTA
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Patent number: 7951728Abstract: A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.Type: GrantFiled: September 24, 2007Date of Patent: May 31, 2011Assignee: Applied Materials, Inc.Inventors: Yoshitaka Yokota, Norman Tam, Balasubramanian Ramachandran, Martin John Ripley
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Patent number: 7947561Abstract: Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.Type: GrantFiled: March 11, 2009Date of Patent: May 24, 2011Assignee: Applied Materials, Inc.Inventors: Rajesh Mani, Norman Tam, Timothy W. Weidman, Yoshitaka Yokota
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Publication number: 20090233453Abstract: Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.Type: ApplicationFiled: March 11, 2009Publication date: September 17, 2009Applicant: APPLIED MATERIALS, INC.Inventors: RAJESH MANI, NORMAN TAM, TIMOTHY W. WEIDMAN, YOSHITAKA YOKOTA
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Publication number: 20090163042Abstract: Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.Type: ApplicationFiled: December 19, 2008Publication date: June 25, 2009Applicant: APPLIED MATERIALS, INC.Inventors: Ming-Kuei (Michael) Tseng, Norman Tam, Yoshitaka Yokota, Agus Tjandra, Robert Navasca, Medhran Behdjat, Sundar Ramamurthy, Kedarnath Sangam, Alexander N. Lerner
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Publication number: 20090081884Abstract: A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.Type: ApplicationFiled: September 24, 2007Publication date: March 26, 2009Inventors: YOSHITAKA YOKOTA, Norman Tam, Balasubramanian Ramachandran, Martin John Ripley
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Patent number: 7509035Abstract: A thermal processing chamber includes a substrate support rotating about a center axis and a lamphead of plural lamps in an array having a predetermined difference in radiance pattern between them. The radiance pattern includes a variation in diffuseness or collimation. In one embodiment, the center lines of all of the lamps are disposed away from the center axis. The array can be an hexagonal array, in which the center axis is located at a predetermined position between neighboring lamps.Type: GrantFiled: August 2, 2005Date of Patent: March 24, 2009Assignee: Applied Materials, Inc.Inventors: Joseph M. Ranish, Corina E. Tanasa, Sundar Ramamurthy, Claudia Lai, Ravi Jallepally, Ramachandran Balasubramanian, Aaron M. Hunter, Agus Tjandra, Norman Tam