Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy.

Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy.

Abstract: The present invention comprehends a compact and economical apparatus for producing high intensities of a wide variety of wanted positive and negative molecular and atomic ion beams that have been previously impossible to previously produce at useful intensities. In addition, the invention provides a substantial rejection of companion background ions that are frequently simultaneously emitted with the wanted ions. The principle underlying the present invention is resonance ionization-transfer where energy differences between resonant and non-resonant processes are exploited to enhance or attenuate particular charge-changing processes. This new source technique is relevant to the fields of Accelerator Mass Spectroscopy; Molecular Ion Implantation; Generation of Directed Neutral Beams; and Production of Electrons required for Ion Beam Neutralization within magnetic fields.

Abstract: The fabrication of modern semiconducting integrated circuits often requires implantation steps that involve high currents of low-energy charged dopant atoms. When employing such beams, the addition of electrons or negative ions for neutralizing the effects of space charge is often crucial for achieving success. Without this supplement, ion beams can ‘blow-up’ causing loss of intensity and disruption of beam focusing. In the present disclosure, methods are presented for introducing and constraining neutralizing low-energy electrons and negative ions within the boundaries of ribbon beams within regions of magnetic field deflection. Apparatus is described for maintaining neutralization based upon a reduction of electron losses, plasma bridge connections and secondary electron production. As part of plasma introduction to the deflection region a novel cryogenic pumping apparatus selectively removes neutral atoms from a plasma stream.

Abstract: A method and apparatus satisfying growing demands for improving the intensity of implanting ions that impact a semiconductor wafer as it passes under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes for combating the disruptive effects of ion-beam induced space-charge forces. The design of the novel optical elements makes possible: (1) Focusing of a ribbon ion beam as the beam passes through uniform or non-uniform magnetic fields; (2) Reduction of the losses of ions comprising a d.c. ribbon beam to the magnetic poles when a ribbon beam is deflected by a magnetic field.

Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy.

Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy.

Abstract: The invention is directed to method for processing substrates and chamber for the same. In one embodiment, a method for processing substrates includes transferring a substrate to a substrate support disposed in a processing chamber, controlling a temperature of a liner lining a sidewall of the processing chamber, and processing the substrate in the processing chamber.

Abstract: A collapsible carton for containing articles such as prepared food and the like, including a plurality of side panels hingedly connected to one another by substantially parallel fold lines is disclosed. A bottom panel formed of a plurality of cooperating end panels hingedly connected to respective side panels and a closure for closing a top opening of the hexagonal carton with the closure being telescopically received within the top opening of the hexagonal carton and frictionally engaged with an inside surface of at least one of the side panels. Additionally, the closure may include a supplemental compartment formed therein for containing articles of a type different than that placed in the main body of the carton. In this case, a supplemental closure is provided which cooperates with the first closure for closing off the supplemental compartment.

Abstract: A rectangular substrate is cooled while it is processed under vacuum in a reaction chamber on a rectangular cooling pedestal having a cooling surface that has a downwardly curving convex shape. The substrate is clamped to the pedestal such that it conforms with a pedestal cooling surface profile. As a result the number of voids between the substrate surface and the pedestal cooling surface are minimized. This promotes consistent cooling of the substrate across the entire substrate surface when the substrate is processed at high RF power levels, by allowing the substrate to be subjected to high levels of backside cooling medium pressure which efficiently propagates heat across such gap from the substrate to the pedestal.

Abstract: An ion beam implanter includes a high energy accelerator having N electrodes equally spaced along the path of an ion beam, where N is an integer greater than 2. A resistor voltage divider has N terminals respectively connected to the N electrodes. Resistances of the divider between adjacent ones of the electrodes have the same value. A variable DC voltage source applies a high positive voltage to terminal N of the divider, while the first terminal of the divider is grounded. Terminal N is connected to an electrode that is upstream of the electrode connected to the first terminal. A shorting bar is dimensioned and positioned to selectively engage terminals N, (N-1 . . . 1. Drive means stepwise moves the shorting bar so an end portion of the bar sequentially engages terminals N, (N-1) . . . 1 in order. The remainder of the bar engages terminals N, (N-1) . . . (a+1) while the bar end portion engages terminal a, where a is selectively every integer from 1 to N.

Abstract: Post harvest treatment of bananas with gibberellins A.sub.4 /A.sub.7 optionally mixed with a fungicide, in amounts sufficient to delay ripening.