Abstract: A method of preparing a stepped structure in a multi-layer film stack on a substrate is described. The multi-layer film stack includes alternating layers of differing composition, wherein the alternating layers of differing composition include one or more layers of a first composition and one or more layers of a second composition. The method includes transferring a mask pattern to the one or more layers of the first composition to form a first layer pattern in the one or more layers of the first composition using a first etch process, trimming the mask pattern to expose another portion of the one or more layers of the first composition using a mask trim process, and following the trimming, transferring the first layer pattern to the one or more layers of the second composition using a second etch process.

Abstract: A method of dry cleaning a plasma processing system is described, wherein the formation of particulate during dry cleaning is substantially minimized. In one embodiment, the dry cleaning process is adjusted in order to substantially reduce spatial variations of the dry cleaning rate within the plasma processing system. In another embodiment, endpoint detection is utilized to determine the completion of the dry cleaning process in order to avoid excessive ion sputtering of the underlying process chamber components.

Abstract: A plasma processing system and method for operating a windowless optical diagnostic system in conjunction with a plasma processing system. The plasma processing system comprises a windowless optical diagnostic system that is constructed and arranged to detect a plasma process condition. The method includes providing a first pressure within a chamber of the plasma processing system and providing a second pressure within a windowless optical diagnostic chamber in which the windowless optical diagnostic system is positioned. The method further includes controlling the second pressure within the windowless optical diagnostic chamber relative to the first pressure within the chamber and optically detecting a plasma process condition.