Abstract: In an embodiment an optoelectronic component includes a carrier, a first semiconductor layer sequence with a first layer having a doped semiconductor material, and a second layer, and a second semiconductor layer sequence disposed atop the second layer and having an active zone configured to generate light, wherein the first layer includes at least a first region having a porosity level which is at least 20% greater than a porosity level of a second region, and a trench separating the first region from the second region, and wherein the carrier is bonded either to the first layer or to a side of the second semiconductor layer sequence remote from the first semiconductor layer sequence.

Abstract: In an embodiment a method for producing a semiconductor body includes providing an auxiliary carrier, depositing a layer sequence on the auxiliary carrier having a first layer including a doped semiconductor material and a second layer including an undoped semiconductor material on the first layer, performing an electrochemical porosification of the first layer, wherein a degree of porosity is at least 20% by volume, forming a functional semiconductor body on the second layer and detaching the semiconductor body from the auxiliary carrier.

Abstract: In an embodiment a method for manufacturing a semiconductor body includes providing an subcarrier, generating a layer sequence with a first layer having a doped semiconductor material and a second layer deposited thereon, the second layer having an undoped semiconductor material, providing an electrochemical porosification of the first layer, wherein a degree of porosity is at least 20% by volume, forming mesa structures in the second layer and at least partially in the porous first layer and epitaxially producing a functional layer sequence having at least one planar third layer which is applied to the second layer comprising the mesa structures, wherein the at least one planar third layer has a specific lattice constant which is different from a lattice constant of the second layer.

Abstract: The invention relates to a method for producing a plurality of optoelectronic semiconductor components, comprising the steps: a) providing a carrier composite having a plurality of component regions; b) forming a filter layer on the carrier composite; c) forming a radiation conversion layer on the filter layer; d) arranging a plurality of semiconductor bodies on the radiation conversion layer, wherein the semiconductor bodies each have a semiconductor layer sequence having an active region provided for radiation generation and are free of a substrate stabilizing the semiconductor body; e) forming a contact layer for producing an electrical connection between the semiconductor bodies; f) forming an insulation layer on the contact layer; g) forming electrical contact surfaces, each of which are electrically conductively connected to the contact layer; and h) separating the carrier composite into the optoelectronic semiconductor components.

Abstract: In an embodiment a method for manufacturing an optoelectronic semiconductor device includes providing a semiconductor body having an active region configured to generate electromagnetic radiation and a coupling-out surface along a main radiation direction, forming a mask layer having a plurality of recesses on the coupling-out surface on the semiconductor body, depositing metallic separators in the recesses and applying a wavelength conversion element to the coupling-out surface of the semiconductor body such that the metallic separators are at least partially embedded therein.

Abstract: An optoelectronic semiconductor component and a 3D printer are disclosed. In an embodiment the component includes a carrier and a plurality of individually controllable pixels, wherein the pixels are mounted on the carrier and are formed from at least one semiconductor material, and wherein the pixels are configured to emit radiation having a wavelength of maximum intensity of 470 nm or less.

Abstract: An optoelectronic semiconductor component includes a primary light source including a carrier and a semiconductor layer sequence mounted thereon and configured to generate primary light, and at least one conversion unit of at least one semiconductor material adapted to convert the primary light into at least one secondary light, wherein the semiconductor layer sequence and the converter unit are separate elements, the semiconductor layer sequence includes a plurality of pixels, the pixels are configured to be controlled electrically independently of each other, the carrier includes a plurality of control units configured to drive the pixels, all pixels of a first group are free of a conversion unit and are configured to emit the primary light, all pixels of a second group of pixels include exactly one conversion unit each and are configured to emit the at least one secondary light.

Abstract: An optoelectronic device may include an arrangement having a plurality of emitter elements configured to sequentially emit light of different wavelength ranges. The arrangement may include a plurality of time-of-flight detector elements configured to detect the light emitted by the emitter elements and reflected at a sample and to carry out a measurement for determining the distance of the reflection point of the light at the sample from the respective time-of-flight detector element. The device further includes an evaluation unit configured to generate a three-dimensional image of the sample for each wavelength range emitted by the emitter elements on the basis of the light detected by the time-of-flight detector elements and the distance of the reflection point of the light from the respective time-of-flight detector element and to determine the distribution of a substance in the sample from the images.

Abstract: In an embodiment an optical component includes an optical body at least partially translucent to visible light and a coating directly arranged at the optical body, wherein the coating has a reflection coefficient of at least 0.8 for at least one wavelength range in a range from 380 nm to 1500 nm and an average thickness between 10 ?m and 200 ?m inclusive, wherein the coating has a polysiloxane as base material, and wherein the polysiloxane comprises —SiO3/2 units.

Abstract: An optoelectronic semiconductor component includes a primary light source including a carrier and a semiconductor layer sequence mounted thereon and configured to generate primary light, and at least one conversion unit of at least one semiconductor material adapted to convert the primary light into at least one secondary light, wherein the semiconductor layer sequence and the converter unit are separate elements, the semiconductor layer sequence includes a plurality of pixels, the pixels are configured to be controlled electrically independently of each other, the carrier includes a plurality of control units configured to drive the pixels, all pixels of a first group are free of a conversion unit and are configured to emit the primary light, all pixels of a second group of pixels include exactly one conversion unit each and are configured to emit the at least one secondary light.

Abstract: A laser light source may include an arrangement of surface-emitting semiconductor lasers to which a voltage is applied such that an operating current is below the threshold current and an intrinsic emission of the surface-emitting semiconductor laser is prevented. The laser light source also comprises a first semiconductor laser which emits radiation that enters the surface-emitting semiconductor laser such that induced emission takes place via the injection locking mechanism and the individual surface-emitting semiconductor lasers emit laser light having the same wavelength and polarisation direction as the irradiated radiation. The emission frequency of the first semiconductor laser can be changed by changing the operating current.

Abstract: In an embodiment a method for manufacturing an optoelectronic semiconductor device includes providing a semiconductor body having an active region configured to generate electromagnetic radiation and a coupling-out surface along a main radiation direction, forming a mask layer having a plurality of recesses on the coupling-out surface on the semiconductor body, depositing metallic separators in the recesses and applying a wavelength conversion element to the coupling-out surface of the semiconductor body such that the metallic separators are at least partially embedded therein.

Abstract: A radiation-emitting device includes a semiconductor layer sequence having an active layer that emits a primary radiation during operation, a decoupling surface on a surface of the semiconductor layer sequence, a wavelength conversion layer on a side of the semiconductor layer sequence facing away from the decoupling surface, containing at least one conversion material that converts the primary radiation into secondary radiation, and a mirror layer on the side of the wavelength conversion layer facing away from the semiconductor layer sequence, wherein the at least one conversion material is electrically conductive and/or embedded in an electrically conductive matrix material.

Abstract: An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are disclosed. In an embodiment, an optoelectronic semiconductor device includes a semiconductor body having an active region configured to generate electromagnetic radiation and a coupling-out surface along a main radiation direction, and a wavelength conversion element having conversion regions, the conversion regions optically separated from one another by metallic separators, wherein the wavelength conversion element is arranged downstream of the semiconductor body in the main radiation direction of the active region, wherein the active region comprises a plurality of independently controllable emission regions, and wherein the emission regions are at least partially aligned with the conversion regions and explicitly assigned to the conversion regions.

Abstract: A radiation-emitting component is disclosed. In an embodiment a radiation-emitting component includes a radiation-emitting semiconductor chip and a transparent joining layer mechanically stably connecting the radiation-emitting semiconductor chip with a carrier, wherein the transparent joining layer comprises a matrix material in which a plurality of nanoparticles are located.

Abstract: A method of producing a semiconductor component includes applying an auxiliary carrier at a first side of a semiconductor body, the auxiliary carrier having a first lateral coefficient of thermal expansion, and applying a connection carrier at a second side of the semiconductor body facing away from the auxiliary carrier, the connection carrier having a second lateral coefficient of thermal expansion, wherein the semiconductor body is grown on a growth substrate different from the auxiliary carrier, the first and the second lateral coefficient of thermal expansion differ by at most 50%, and the growth substrate is removed prior to application of the auxiliary carrier.

Abstract: An optoelectronic semiconductor component includes a primary light source including a carrier and a semiconductor layer sequence mounted thereon and configured to generate primary light, and at least one conversion unit of at least one semiconductor material adapted to convert the primary light into at least one secondary light, wherein the semiconductor layer sequence and the converter unit are separate elements, the semiconductor layer sequence includes a plurality of pixels, the pixels are configured to be controlled electrically independently of each other, the carrier includes a plurality of control units configured to drive the pixels, all pixels of a first group are free of a conversion unit and are configured to emit the primary light, all pixels of a second group of pixels include exactly one conversion unit each and are configured to emit the at least one secondary light.

Abstract: An optoelectronic semiconductor component and a 3D printer are disclosed. In an embodiment the component includes a carrier and a plurality of individually controllable pixels, wherein the pixels are mounted on the carrier and are formed from at least one semiconductor material, and wherein the pixels are configured to emit radiation having a wavelength of maximum intensity of 470 nm or less.

Abstract: A method of producing optoelectronic semiconductor components including providing a primary light source having a carrier and a semiconductor layer sequence mounted thereon that generates primary light (B), wherein the semiconductor layer sequence is structured into a plurality of pixels that can be driven electrically independently of each other, and the carrier includes a plurality of control units that drive the pixels, providing at least one conversion unit adapted to convert the primary light (B) into at least one secondary light (G, R), wherein the conversion unit is grown continuously from at least one semiconductor material, structuring the conversion unit, wherein portions of the semiconductor material are removed in accordance with the pixels, and applying the conversion unit to the semiconductor layer sequence so that the remaining semiconductor material is uniquely assigned to a portion of the pixels.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed.