Abstract: An optoelectronic semiconductor component has a carrier and at least one semiconductor chip for emitting electromagnetic radiation. The semiconductor chip has two or more individually controllable elements. The semiconductor component additionally has a wavelength conversion element for at least partial conversion of the primary radiation emitted by the semiconductor chip into a secondary electromagnetic radiation. Each of the elements is suitable for generating primary radiation. The wavelength conversion element is structured into subregions. At least one individually controllable element of the semiconductor chip is associated with each subregion of the wavelength conversion element.

Abstract: A light-emitting diode chip includes a semiconductor body including a radiation-generating active region, at least two contact locations electrically contacting the active region, a carrier and a connecting medium arranged between the carrier and the semiconductor body, wherein the semiconductor body includes roughening on outer surfaces facing the carrier, the semiconductor body mechanically connects to the carrier by the connecting medium, the connecting medium locally directly contacts the semiconductor body and the carrier, and the at least two contact locations are arranged on the upper side of the semiconductor body facing away from the carrier.

Abstract: The invention relates to a semiconductor component (1) comprising: a plurality of semiconductor chips (2), each having a semiconductor layer sequence (200) with an active region (20) for generating radiation; a radiation output side (10) that runs parallel to the active regions (20); a mounting side surface (11) which is provided for securing the semiconductor component, and which runs in a transverse or perpendicular direction to the radiation output side; a moulded body (4) which is shaped in places on the semiconductor chips, and which at least partially forms the mounting side surface; and a contact structure (50) which is arranged on the moulded body, and which connects at least two semiconductor chips of the plurality of semiconductor chips in an electrically conductive manner. The invention also relates to a lighting device (9) and to a method for producing a semiconductor component.

Abstract: A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation and is arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region facing away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer, in the emission region, electrically conductively connects to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; the second semiconductor layer, in the emission region, electrically conductively connects to a second connection layer.

Abstract: An optoelectronic semiconductor chip includes an interconnection layer with a first electrically conductive contact layer, a second electrically conductive contact layer and an insulation layer, which is formed of an electrically insulating material. Further, the optoelectronic semiconductor chip includes two optoelectronic semiconductor bodies, each of which include an active region that is intended to generate radiation. The insulation layer is arranged on a top of the second electrically conductive contact layer facing the optoelectronic semiconductor bodies. The first electrically conductive contact layer is arranged on a top of the insulation layer remote from the second electrically conductive contact layer. The optoelectronic semiconductor bodies are interconnected electrically in parallel by the interconnection layer.

Abstract: A method for producing a plurality of semiconductor components (1) is provided, comprising the following steps: a) providing a semiconductor layer sequence (2) having a first semiconductor layer (21), a second semiconductor layer (22) and an active region (25), said active region being arranged between the first semiconductor layer and the second semiconductor layer for generating and/or receiving radiation; b) forming a first connection layer (31) on the side of the second connection layer facing away from the first semiconductor layer; c) forming a plurality of cut-outs (29) through the semiconductor layer sequence; d) forming a conducting layer (4) in the cut-outs for establishing an electrically conductive connection between the first semiconductor layer and the first connection layer; and e) separating into the plurality of semiconductor components, wherein a semiconductor body (20) having at least one of the plurality of cut-outs arises from the semiconductor layer sequence for each semiconductor compon

Abstract: A method for manufacturing an opto-electronic component (100) is given, comprising a provision of a carrier (1) with at least one mounting surface (11), a generation of at least two vias (4) in the carrier (1) with electrically conducting contacts (12, 13) running through the vias (4), a provision of at least one light-emitting semiconductor chip (2), wherein the semiconductor chip (2) comprises a growth substrate (10) and a layer sequence (7) epitaxially grown thereon, a mounting of the at least one semiconductor chip (2) onto the at least one mounting surface (11) of the carrier (1), wherein the semiconductor chip (2) is connected in an electrically conducting manner to the contacts (12, 13) in the same method step during the mounting onto the mounting surface (11), an isolation of the carrier (1) along isolation lines (V), wherein an isolation line (V) runs through at least one of the vias (4), so that, after the isolation, the contacts (12, 13) form contact surfaces (5) at at least one side surface (1a) o

Abstract: A light-emitting diode chip includes at least two semiconductor bodies, each semiconductor body including at least one active area that generates radiation, a carrier having a top side and an underside facing away from the top side, and an electrically insulating connector arranged at the top side of the carrier, wherein the electrically insulating connector is arranged between the semiconductor bodies and the top side of the carrier, the electrically insulating connector imparts a mechanical contact between the semiconductor bodies and the carrier, and at least some of the semiconductor bodies electrically connect in series with one another.

Abstract: A light-emitting device includes a conversion element including a light-emitting surface provided with a conversion layer, wherein the conversion layer contains a matrix material and a converter material, both the matrix material and the converter material are materials that can be vaporized under high vacuum, the matrix material and the converter material are applied to the light-emitting surface by vaporization under a high vacuum, and the matrix material has the structural formula where R1, R2, R3, R4 and X may be mutually independently selected from the group comprising F, Cl and H, and n>=2.

Abstract: Disclosed is a method for producing a wavelength conversion element (10) wherein a wavelength conversion layer (100) is provided, the surface thereof is treated with a plasma (50), and the wavelength conversion layer is punched. Also disclosed are a wavelength conversion layer and an optoelectronic component comprising a wavelength conversion layer.

Abstract: The invention relates to an optoelectronic semiconductor component (1) comprising:—an optoelectronic semiconductor chip (2), comprising—a growth substrate (21) having a growth surface (21a),—a layer sequence (22) with a semiconductor layer sequence (221, 222, 223) with an active zone (222) grown on the growth surface (21a),—contact points (29) for electrically contacting the semiconductor layer sequence (221, 222, 223) and—and insulation layer (26), which is formed in an electrically insulting manner—a connection carrier (4), which is mounted to the cover surface (2a) of the optoelectronic semiconductor chip facing away from the growth surface (21a), wherein—the semiconductor layer sequence (221, 222, 223) is connected to the connection carrier (4) in an electrically conducting manner and—a conversion layer (5) is applied to a bottom surface (21c) of the growth substrate (21) facing away from the growth surface (21a) and to all side surfaces (21b) of the growth substrate (21).

Abstract: A light-emitting diode arrangement includes a piezoelectric transformer having at least one output connection position, and a high-voltage light-emitting diode including a high-voltage light-emitting diode chip including at least two active regions connected in series with one another, wherein the high-voltage light-emitting diode is electrically connected to the output connection position of the piezo transformer.

Abstract: In at least one embodiment, a surface light source includes one or a more optoelectronic semiconductor chips having a radiation main side for generating a primary radiation. A scattering body is disposed downstream of the radiation main side along a main emission direction of the semiconductor chips. The scatting body is designed for scattering the primary radiation. A main emission direction of the scattering body is oriented obliquely with respect to the main emission direction of the semiconductor chip.

Abstract: An optoelectronic component device includes a first group of optoelectronic components including at least one first optoelectronic component, wherein the at least one first optoelectronic component provides electromagnetic radiation of a first color valence, a second group of optoelectronic components including at least one second optoelectronic component, wherein the at least one second optoelectronic component provides electromagnetic radiation of a second color valence, and a phase dimmer, wherein the phase dimmer is designed in such a way that a first operating mode and a second operating mode are provided, wherein the phase dimmer actuates the first and the second group of optoelectronic components in such a way that, in the first operating mode, a first array of optoelectronic components of the optoelectronic component device is energized and, in the second operating mode, a second array of optoelectronic components of the optoelectronic component device is energized.

Abstract: A display device with a semiconductor layer sequence includes an active region provided for generating radiation and a plurality of pixels. The display device also includes a carrier. The active region is arranged between a first semiconductor layer and a second semiconductor layer. The semiconductor layer sequence includes at least one recess, which extends from a major face of the semiconductor layer sequence facing the carrier through the active region into the first semiconductor layer and is provided for electrical contacting of the first semiconductor layer. The carrier includes a number of switches, which are each provided for controlling at least one pixel.

Abstract: A method of producing a contact element for an optoelectronic component includes providing an auxiliary carrier with a sacrificial layer arranged on a top side of the auxiliary carrier; providing a carrier structure having a top side and a rear side situated opposite the top side, wherein an insulation layer is arranged at the rear side of the carrier structure; connecting the sacrificial layer to the insulation layer by an electrically conductive connection layer; creating at least one blind hole extending from the top side of the carrier structure as far as the insulation layer; opening the insulation layer in a region of the at least one blind hole; arranging an electrically conductive material in the at least one blind hole; detaching the auxiliary carrier by separating the sacrificial layer; and patterning the electrically conductive connection layer.

Abstract: A method for producing an optoelectronic semiconductor chip is specified, comprising the following steps: providing an n-conducting layer (2), arranging a p-conducting layer (4) on the n-conducting layer (2), arranging a metal layer sequence (5) on the p-conducting layer (4),arranging a mask (6) at that side of the metal layer sequence (5) which is remote from the p-conducting layer (4),in places removing the metal layer sequence (5) and uncovering the p-conducting layer (4) using the mask (6), and in places neutralizing or removing the uncovered regions (4a) of the p-conducting layer (4) as far as the n-conducting layer (2) using the mask (6), wherein the metal layer sequence (5) comprises at least one mirror layer (51) and a barrier layer (52), and the mirror layer (51) of the metal layer sequence (5) faces the p-conducting layer (4).

Abstract: A method for producing an optoelectronic semiconductor chip is disclosed. A semiconductor body has a pixel area, which has at least two different subpixel areas. An electrically conductive layer is applied to the radiation outlet surface of at least one subpixel area. The electrically conductive layer is designed to at least partially salify with a protic reaction partner. A conversion layer is deposited onto the electrically conductive layer by means of a electrophoresis process.

Abstract: There is herein described a patterned thin-film wavelength converter which comprises a substrate having a first patterned surface with a first pattern, and a thin film deposited on the first patterned surface. The thin film consists of a wavelength converting material and has a second patterned surface that is distal from the substrate. The second patterned surface has a second pattern that is substantially the same as the first pattern of the substrate. An advantage of the patterned thin-film wavelength converter is that post-deposition processing is not required to produce a textured surface on the wavelength converting material. A method of making the patterned thin-film wavelength converter is also described.

Abstract: A surface-mountable optoelectronic semiconductor component is specified. The surface-mountable optoelectronic semiconductor component includes an optoelectronic semiconductor chip, a radiation-transmissive growth substrate, a housing body and an electrically conductive connection. The housing body is arranged at least in places between a side surface of the growth substrate and the electrically conductive connection. The housing body completely covers all of the side surfaces of the growth substrate, and the housing body has, on a surface facing away from the side surface of the growth substrate, traces of material removal or traces of a form tool.