Patents by Inventor Nosho Toyama

Nosho Toyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of producing a silicon carbide semiconductor device
    Patent number: 5597744
    Abstract: Electrodes 16a and 16b composed of metal nitride made of either one of TiN, ZrN, HfN, VN and TaN are formed on an N-type source region 12 and drain region 13 of a P-type SiC substrate 11, respectively, Nitrogen-rich layers 12a and 13a are formed in surface layer portions of the regions 12 and 13 which the electrodes composed of metal nitride 16a and 16b contact respectively. The nitrogen-rich layer allows the contact resistivity of the electrode to be made small, A metal nitride composed of either one of TiN, ZrN, HfN, VN and TaN is interposed between a gate electrode 15 of Mo and an interconnection of Al 17c to prevent the reaction of the gate electrode and the interconnection.
    Type: Grant
    Filed: August 17, 1995
    Date of Patent: January 28, 1997
    Assignees: Mitsubishi Materials Corporation, Research Institute of Innovative Technology for the Earth
    Inventors: Eiji Kamiyama, Kazuhiro Fusegawa, Nosho Toyama