Abstract: A method for atomic layer deposition for the deposition of silicon oxide on a substrate, performed at room temperature, involving at least three precursors, being silicon tetrachloride, water and one Lewis base agent, being in various instances ammonia. The process comprises the steps of exposing on the substrate during an exposure time (a) the one Lewis base agent, (b) the silicon tetrachloride, and (c) the water. The process is remarkable in that at least one step of purge with nitrogen gas is performed after each of the steps (a), (b) and (c) during a purge time. Additionally, a film of silicon oxide which is remarkable in that it comprises a low level of chlorine contaminant and a significant degree of porosity with pores, the pores being in various instances micropores, mesopores or nanopores.

Abstract: A method for atomic layer deposition for the deposition of silicon oxide on a substrate, performed at room temperature, involving at least three precursors, being silicon tetrachloride, water and one Lewis base agent, being in various instances ammonia. The process comprises the steps of exposing on the substrate during an exposure time (a) the one Lewis base agent, (b) the silicon tetrachloride, and (c) the water. The process is remarkable in that at least one step of purge with nitrogen gas is performed after each of the steps (a), (b) and (c) during a purge time. Additionally, a film of silicon oxide which is remarkable in that it comprises a low level of chlorine contaminant and a significant degree of porosity with pores, the pores being in various instances micropores, mesopores or nanopores.

Abstract: A fluidized bed reactor designed for in situ gas phase impregnation. The reactor comprises a tube with an upstream zone and a downstream zone, the upstream zone and the downstream zone being separated by a separation filter. A method for a controlled-deposition of a sublimated precursor onto a fluidized solid support. The method is remarkable in that it is carried out in situ within the tube of the fluidized bed reactor in accordance with the fluidized bed reactor.

Abstract: A process of atomic layer deposition for the deposition of silicon oxide on a substrate, performed at room temperature, involving at least three precursors, being silicon tetrachloride, water and one Lewis base agent, being in various instances ammonia. The process comprises the steps of exposing on the substrate during an exposure time (a) the one Lewis base agent, (b) the silicon tetrachloride, and (c) the water. The process is remarkable in that at least one step of purge with nitrogen gas is performed after each of the steps (a), (b) and (c) during a purge time. Additionally, a film of silicon oxide which is remarkable in that it comprises a low level of chlorine contaminant and a significant degree of porosity with pores, the pores being in various instances micropores, mesopores or nanopores.

Abstract: A process for synthesizing a biphasic material, the biphasic material comprising at least one mesoporous substrate surrounded with carbon nanotubes, the process comprising step (a) of providing a catalyst on the at least one mesoporous substrate, the catalyst being configured to favour the growth of the carbon nanotubes, and the process comprising step (b) of performing the growth of the carbon nanotubes. The synthesis process is remarkable in that the two steps (a) and (b) are performed in a one-pot synthesis.

Abstract: A fluidized bed reactor designed for in situ gas phase impregnation. The reactor comprises a tube with an upstream zone and a downstream zone, the upstream zone and the downstream zone being separated by a separation filter. A method for a controlled-deposition of a sublimated precursor onto a fluidized solid support. The method is remarkable in that it is carried out in situ within the tube of the fluidized bed reactor in accordance with the fluidized bed reactor.

Abstract: A process of atomic layer deposition for the deposition of silicon oxide on a substrate, performed at room temperature, involving at least three precursors, being silicon tetrachloride, water and one Lewis base agent, being in various instances ammonia. The process comprises the steps of exposing on the substrate during an exposure time (a) the one Lewis base agent, (b) the silicon tetrachloride, and (c) the water. The process is remarkable in that at least one step of purge with nitrogen gas is performed after each of the steps (a), (b) and (c) during a purge time. Additionally, a film of silicon oxide which is remarkable in that it comprises a low level of chlorine contaminant and a significant degree of porosity with pores, the pores being in various instances micropores, mesopores or nanopores.

Abstract: A process for synthesizing a biphasic material, the biphasic material comprising at least one mesoporous substrate surrounded with carbon nanotubes, the process comprising step (a) of providing a catalyst on the at least one mesoporous substrate, the catalyst being configured to favour the growth of the carbon nanotubes, and the process comprising step (b) of performing the growth of the carbon nanotubes. The synthesis process is remarkable in that the two steps (a) and (b) are performed in a one-pot synthesis.

Abstract: Method of depositing a film having a substantially uniform thickness by means of chemical vapor deposition, comprising: providing a reaction chamber; providing a substrate in said reaction chamber; subjecting the substrate to a series of deposition cycles, wherein each deposition cycle includes the steps of: (a) during a first time interval, supplying a first reactant to the reaction chamber; (b) during a second time interval, supplying a second reactant to the reaction chamber; and (c) during a third time interval, supplying neither the first nor the second reactant to the reaction chamber; wherein a start of the second time interval lies within the first time interval, such that a pre-exposure interval exists between a start of the first time interval and the start of the second time interval, during which pre-exposure interval the first reactant is supplied to the reaction chamber while the second reactant is not.

Abstract: A thermal processing furnace, comprising: a generally bell jar-shaped outer reaction tube having a central axis; and an open-ended inner reaction tube for accommodating a wafer boat holding a plurality of substrates, which inner reaction tube is substantially coaxially disposed within the outer reaction tube, thereby defining a gas passage between an outer wall of the inner reaction tube and an inner wall of the outer reaction tube, wherein at least one of the outer wall of the inner reaction tube and the inner wall of the outer reaction tube is provided with a flow deflector that protrudes radially from the respective wall into the gas passage.

Abstract: A thermal processing furnace, comprising: a generally bell jar-shaped outer reaction tube having a central axis; and an open-ended inner reaction tube for accommodating a wafer boat holding a plurality of substrates, which inner reaction tube is substantially coaxially disposed within the outer reaction tube, thereby defining a gas passage between an outer wall of the inner reaction tube and an inner wall of the outer reaction tube, wherein at least one of the outer wall of the inner reaction tube and the inner wall of the outer reaction tube is provided with a flow deflector that protrudes radially from the respective wall into the gas passage.

Abstract: Method of depositing a film having a substantially uniform thickness by means of chemical vapor deposition, comprising: providing a reaction chamber; providing a substrate in said reaction chamber; subjecting the substrate to a series of deposition cycles, wherein each deposition cycle includes the steps of: (a) during a first time interval, supplying a first reactant to the reaction chamber; (b) during a second time interval, supplying a second reactant to the reaction chamber; and (c) during a third time interval, supplying neither the first nor the second reactant to the reaction chamber; wherein a start of the second time interval lies within the first time interval, such that a pre-exposure interval exists between a start of the first time interval and the start of the second time interval, during which pre-exposure interval the first reactant is supplied to the reaction chamber while the second reactant is not.