Patents by Inventor Novy Sastrawati TJOKRO

Novy Sastrawati TJOKRO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Through silicon via metallization
    Patent number: 9029258
    Abstract: To achieve the foregoing and in accordance with the purpose of the present invention, a method for filling through silicon vias is provided. A dielectric layer is formed over the through silicon vias. A barrier layer, comprising tungsten, is deposited by CVD or ALD over the dielectric layer. The through silicon vias are filled with a conductive material.
    Type: Grant
    Filed: February 5, 2013
    Date of Patent: May 12, 2015
    Assignee: Lam Research Corporation
    Inventors: Praveen Reddy Nalla, Novy Sastrawati Tjokro, Artur Kolics, Seshasayee Varadarajan
  • THROUGH SILICON VIA METALLIZATION
    Publication number: 20140217590
    Abstract: To achieve the foregoing and in accordance with the purpose of the present invention, a method for filling through silicon vias is provided. A dielectric layer is formed over the through silicon vias. A barrier layer, comprising tungsten, is deposited by CVD or ALD over the dielectric layer. The through silicon vias are filled with a conductive material.
    Type: Application
    Filed: February 5, 2013
    Publication date: August 7, 2014
    Applicant: Lam Research Corporation
    Inventors: Praveen Reddy NALLA, Novy Sastrawati TJOKRO, Artur KOLICS, Seshasayee VARADARAJAN