Abstract: A memory device includes: a substrate having a memory region and an external region; a first conductor, in the memory region, being arranged apart from the substrate in a first direction; second and third conductors, in the external region, being arranged apart from the first conductor in a second direction; a first member between the first and second conductors; a second member between the second and third conductors; and an insulating member between the first and second members. The first and second members each includes a lower portion extending in the first direction and reaching below the second conductor and an upper portion having a side surface outside an extension of a side surface of the lower portion. The insulating member includes lower and upper ends located below and above each of the upper portions, respectively.

Abstract: According to one embodiment, a semiconductor storage device includes: first and second plate-shaped portions which extend in a stacking direction of each layer of a first stacked body and a first direction intersecting the stacking direction and are arranged between the first stacked body and a second stacked body on both sides of the second stacked body in a second direction intersecting the stacking direction and the first direction; and an isolation layer that penetrates at least the uppermost conductive layer among a plurality of conductive layers and isolates the uppermost conductive layer in the second direction. The isolation layer extends in a portion of the first stacked body in the first direction toward the second stacked body, and is connected to a side surface of the first plate-shaped portion from a first region on an inner side of the first and second plate-shaped portions.

Abstract: According to one embodiment, a semiconductor storage device includes: first and second plate-shaped portions which extend in a stacking direction of each layer of a first stacked body and a first direction intersecting the stacking direction and are arranged between the first stacked body and a second stacked body on both sides of the second stacked body in a second direction intersecting the stacking direction and the first direction; and an isolation layer that penetrates at least the uppermost conductive layer among a plurality of conductive layers and isolates the uppermost conductive layer in the second direction. The isolation layer extends in a portion of the first stacked body in the first direction toward the second stacked body, and is connected to a side surface of the first plate-shaped portion from a first region on an inner side of the first and second plate-shaped portions.