Patents by Inventor Nozomu Hattori

Nozomu Hattori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10669630
    Abstract: A layer-forming device includes a feeding mechanism that feeds a substrate during layer formation, an injector unit having a plurality of injectors that supplies a layer-forming gas to the substrate, along a feeding passage of the substrate, and a reactant supply unit which generates a reactant. The injector unit supplies the reactant through gaps between the injectors to a layer of the layer-forming component. A substrate opposing surface of the injector includes a layer-forming gas supply slot through which the layer-forming gas is output, first gas exhaust slots that suck an excess gas such as the layer-forming gas, the first gas exhaust slots being provided on both sides of the layer-forming gas supply slot in a feeding direction of the substrate, and inert gas supply slots that supply an inert gas provided on far sides of the respective first gas exhaust slots away from the layer-forming gas supply slot.
    Type: Grant
    Filed: February 21, 2014
    Date of Patent: June 2, 2020
    Assignee: MITSUI E&S MACHINERY CO., LTD.
    Inventors: Nozomu Hattori, Naomasa Miyatake, Yasunari Mori
  • Publication number: 20190366402
    Abstract: A composite roll for rolling having a structure comprising centrifugally cast outer and intermediate layers of an Fe-based alloy integrally fused to an inner layer of ductile cast iron; the outer layer having a composition comprising by mass 1-3% of C, 0.3-3% of Si, 0.1-3% of Mn, 0.5-5% of Ni, 1-7% of Cr, 2.2-8% of Mo, 4-7% of V, 0.005-0.15% of N, and 0.05-0.2% of B, the balance being Fe and inevitable impurities; the intermediate layer containing 0.025-0.15% by mass of B; the B content in the intermediate layer being 40-80% of that in the outer layer; and the total amount of Cr, Mo, V, Nb and W in the intermediate layer being 40-90% of that in the outer layer.
    Type: Application
    Filed: February 8, 2018
    Publication date: December 5, 2019
    Applicant: HITACHI METALS, LTD.
    Inventors: Yasunori NOZAKI, Nozomu ODA, Toshiyuki HATTORI
  • Patent number: 10246776
    Abstract: A layer-forming device that enables highly efficient layer formation and has a simplified configuration includes: a substrate feeding mechanism; a plasma-generating electrode; a space-partitioning wall; and a plurality of injectors. The plasma-generating electrode faces towards a feeding pathway of the substrate, and generates plasma using a reactive gas upon a supply of electric power. The space-partitioning wall is disposed between the feeding pathway and the plasma-generating electrode. A plurality of slit-shaped through-holes, through which radicals, ions generated from the plasma, or a portion of the plasma can pass, are formed at predetermined intervals in the space-partitioning wall.
    Type: Grant
    Filed: February 21, 2014
    Date of Patent: April 2, 2019
    Assignee: MITSUI E&S MACHINERY CO., LTD
    Inventors: Yasunari Mori, Naomasa Miyatake, Nozomu Hattori
  • Publication number: 20160237566
    Abstract: When a film is formed atomic layer by atomic layer with a use of a raw material gas and a reaction gas, a raw material gas is supplied into a film-forming space in which a substrate is placed to adsorb a component of the raw material gas onto the substrate. Then, a reaction gas is supplied into the film-forming space. Plasma is produced in the film-forming space using the reaction gas supplied so that part of a component of the raw material gas adsorbed on the substrate reacts with the reaction gas. At this moment, a duration of production of the plasma is set within a range of 0.5 millisecond to 100 milliseconds according to a degree of at least one property of a film to be formed, and a density of power input to the plasma source is in a range of 0.05 W/cm2 to 10 W/cm2.
    Type: Application
    Filed: March 13, 2014
    Publication date: August 18, 2016
    Inventors: Nozomu HATTORI, Naomasa MIYATAKE, Yasunari MORI, Yoshiharu NAKASHIMA
  • Publication number: 20160010209
    Abstract: A layer-forming device includes a feeding mechanism that feeds a substrate during layer formation, an injector unit having a plurality of injectors that supplies a layer-forming gas to the substrate, along a feeding passage of the substrate, and a reactant supply unit which generates a reactant. The injector unit supplies the reactant through gaps between the injectors to a layer of the layer-forming component. A substrate opposing surface of the injector includes a layer-forming gas supply slot through which the layer-forming gas is output, first gas exhaust slots that suck an excess gas such as the layer-forming gas, the first gas exhaust slots being provided on both sides of the layer-forming gas supply slot in a feeding direction of the substrate, and inert gas supply slots that supply an inert gas provided on far sides of the respective first gas exhaust slots away from the layer-forming gas supply slot.
    Type: Application
    Filed: February 21, 2014
    Publication date: January 14, 2016
    Inventors: Nozomu HATTORI, Naomasa MIYATAKE, Yasunari MORI
  • Publication number: 20160002785
    Abstract: A layer-forming device that enables highly efficient layer formation and has a simplified configuration includes: a substrate feeding mechanism; a plasma-generating electrode; a space-partitioning wall; and a plurality of injectors. The plasma-generating electrode faces towards a feeding pathway of the substrate, and generates plasma using a reactive gas upon a supply of electric power. The space-partitioning wall is disposed between the feeding pathway and the plasma-generating electrode. A plurality of slit-shaped through-holes, through which radicals, ions generated from the plasma, or a portion of the plasma can pass, are formed at predetermined intervals in the space-partitioning wall.
    Type: Application
    Filed: February 21, 2014
    Publication date: January 7, 2016
    Applicant: MITSUI ENGINEERING & SHIPBUILDING CO., LTD.
    Inventors: Yasunari MORI, Naomasa MIYATAKE, Nozomu HATTORI
  • Patent number: 8440268
    Abstract: Oxygen gas, for example, is introduced into a film forming chamber, and high-frequency power is supplied to a plurality of monopole antennas arranged above a silicon substrate (101) in the film forming chamber to generate a plasma of the introduced oxygen gas, thereby supplying atomic oxygen (123) onto the surface of an aminosilane molecular layer (102). This plasma generation is performed for about 1 sec. With this operation, the adsorption layer (102) adsorbed onto the surface of the silicon substrate (101) is oxidized, thereby forming a silicon oxide layer (112) corresponding to one atomic layer of silicon on the surface of the silicon substrate (101).
    Type: Grant
    Filed: March 28, 2007
    Date of Patent: May 14, 2013
    Assignee: Mitsui Engineering & Shipbuilding Co., Ltd.
    Inventors: Keisuki Washio, Kazutoshi Murata, Naomasa Miyatake, Hiroyuki Tachibana, Nozomu Hattori
  • Patent number: 8382071
    Abstract: A raw material supply device (105) includes an introduction pipe (152a) which introduces a carrier gas into a raw material vessel (151), a transport pipe (152b) which transports a source gas fed out from the raw material vessel, a supply pipe (155a) which is branched from the transport pipe and supplies the source gas to a film forming chamber (101), a circulation pipe (155b) which is branched from the transport pipe (152b) and returns the source gas to the introduction pipe (152a), an introduction valve (156a) which is attached to the introduction pipe, a supply valve (156b) which is attached to the supply pipe, a circulation valve (156c) which is attached to the circulation pipe, and a controller (157) which controls opening/closing of the valves. The controller controls the supply valve and the circulation valve to be in opposite open/closed states. The source gas can be supplied more stably while suppressing the waste of the raw material.
    Type: Grant
    Filed: February 26, 2009
    Date of Patent: February 26, 2013
    Assignee: Mitsui Engineering & Shipbuilding Co., Ltd.
    Inventor: Nozomu Hattori
  • Publication number: 20130008382
    Abstract: This thin-film forming device includes: a deposition vessel in which a reduced-pressure deposition space, to which a raw material gas and a reactant gas are alternately supplied on different timings, is formed in order to form a thin film on the substrate; and a gas supply unit configured to supply the raw material gas and the reactant gas to the deposition vessel. The gas supply unit is provided with at least one partition that bends a gas passage from an inlet port of each of the raw material gas and the reactant gas toward the deposition space.
    Type: Application
    Filed: March 17, 2011
    Publication date: January 10, 2013
    Applicant: MITSUI ENGINEERING & SHIPBUILDING CO., LTD.
    Inventors: Nozomu Hattori, Yasunari Mori
  • Patent number: 8202367
    Abstract: An atomic layer growing apparatus includes a film forming chamber (101) in which the vapor phase growth of a film is performed, a substrate table (102) having a heating mechanism accommodated in the film forming chamber (101), and an exhaust mechanism (104). The atomic layer growing apparatus also includes a material supply unit (105) including a material vaporizer (151), two buffer tanks, i.e., a buffer tank A (152a) and buffer tank B (152b), a fill valve A (153a) and supply valve A (154a) of the buffer tank A (152a), a fill valve B (153b) and supply valve B (154b) of the buffer tank B (152b), an injection control valve (155), and a control unit (156) which controls the opening/closing of each valve.
    Type: Grant
    Filed: March 28, 2007
    Date of Patent: June 19, 2012
    Assignee: Mitsui Engineering & Shipbuilding Co., Ltd.
    Inventors: Hiroyuki Tachibana, Kazutoshi Murata, Nozomu Hattori
  • Publication number: 20110000554
    Abstract: A raw material supply device (105) includes an introduction pipe (152a) which introduces a carrier gas into a raw material vessel (151), a transport pipe (152b) which transports a source gas fed out from the raw material vessel, a supply pipe (155a) which is branched from the transport pipe and supplies the source gas to a film forming chamber (101), a circulation pipe (155b) which is branched from the transport pipe (152b) and returns the source gas to the introduction pipe (152a), an introduction valve (156a) which is attached to the introduction pipe, a supply valve (156b) which is attached to the supply pipe, a circulation valve (156c) which is attached to the circulation pipe, and a controller (157) which controls opening/closing of the valves. The controller controls the supply valve and the circulation valve to be in opposite open/closed states. The source gas can be supplied more stably while suppressing the waste of the raw material.
    Type: Application
    Filed: February 26, 2009
    Publication date: January 6, 2011
    Applicant: MITSUI ENGEINNEERING & SHIPBUILDINGS G., LTD
    Inventor: Nozomu Hattori
  • Publication number: 20090291232
    Abstract: Oxygen gas, for example, is introduced into a film forming chamber, and high-frequency power is supplied to a plurality of monopole antennas arranged above a silicon substrate (101) in the film forming chamber to generate a plasma of the introduced oxygen gas, thereby supplying atomic oxygen (123) onto the surface of an aminosilane molecular layer (102). This plasma generation is performed for about 1 sec. With this operation, the adsorption layer (102) adsorbed onto the surface of the silicon substrate (101) is oxidized, thereby forming a silicon oxide layer (112) corresponding to one atomic layer of silicon on the surface of the silicon substrate (101).
    Type: Application
    Filed: March 28, 2007
    Publication date: November 26, 2009
    Applicant: MITSUI ENGINEERING & SHIPBUILDING CO., LTD.
    Inventors: Keisuki Washio, Kazutoshi Murata, Naomasa Miyatake, Hiroyuki Tachibana, Nozomu Hattori
  • Publication number: 20090266296
    Abstract: An atomic layer growing apparatus includes a film forming chamber (101) in which the vapor phase growth of a film is performed, a substrate table (102) having a heating mechanism accommodated in the film forming chamber (101), and an exhaust mechanism (104). The atomic layer growing apparatus also includes a material supply unit (105) including a material vaporizer (151), two buffer tanks, i.e., a buffer tank A (152a) and buffer tank B (152b), a fill valve A (153a) and supply valve A (154a) of the buffer tank A (152a), a fill valve B (153b) and supply valve B (154b) of the buffer tank B (152b), an injection control valve (155), and a control unit (156) which controls the opening/closing of each valve.
    Type: Application
    Filed: March 28, 2007
    Publication date: October 29, 2009
    Inventors: Hiroyuki Tachibana, Kazutoshi Murata, Nozomu Hattori