Abstract: There is provided a dry film photoresist including a substrate layer constituted by a certain substrate, a resist layer disposed over the substrate layer, the resist layer including a plurality of layers, and a protective film layer disposed over the resist layer, the protective film layer protecting the resist layer. A photosensitive layer is positioned on a side of the substrate layer of the resist layer, the photosensitive layer having a dissolution rate to a certain developer that decreases by being exposed to light, and a non-photosensitive layer is positioned on a side of the protective film layer of the resist layer, the non-photosensitive layer being soluble to the developer. A dissolution rate of the non-photosensitive layer to the developer is higher than a dissolution rate of an unexposed portion in the photosensitive layer to the developer.

Abstract: AlGaInP system laser device (24) and AlGaAs system laser device (26) are arranged so that respective stripes (28, 30) are parallel to each other. The AlGaInP system laser device (24) is placed to (011) plane (22b) side from the centerline of the substrate and the AlGaAs system laser device (26) is placed to the (0{overscore (1)}{overscore (1)}) plane (22a) side from the centerline of the substrate when viewed from the main emitting plane (01{overscore (1)}) (22c) side of laser light. Substrate (22) is an off substrate and inclines from the (0{overscore (1)}{overscore (1)}) plane (22a) toward the (011) plane (22b) with respect to the (100) plane at a certain angle (? off) within the range of 2 degrees and 15 degrees. Optical axis L1 of the AlGaInP system laser device (24) is parallel to optical axis L2 of the AlGaAs system laser device (26) and approaches at an angle of about 0.5 degrees.

Abstract: AlGaInP system laser device (24) and AlGaAs system laser device (26) are arranged so that respective stripes (28, 30) are parallel to each other. The AlGaInP system laser device (24) is placed to (011) plane (22b) side from the centerline of the substrate and the AlGaAs system laser device (26) is placed to the (0{overscore (1)}{overscore (1)}) plane (22a) side from the centerline of the substrate when viewed from the main emitting plane (01{overscore (1)}) (22c) side of laser light. Substrate (22) is an off substrate and inclines from the (0{overscore (1)}{overscore (1)}) plane (22a) toward the (011) plane (22b) with respect to the (100) plane at a certain angle (? off) within the range of 2 degrees and 15 degrees. Optical axis L1 of the AlGaInP system laser device (24) is parallel to optical axis L2 of the AlGaAs system laser device (26) and approaches at an angle of about 0.5 degrees.

Abstract: AlGaInP system laser device (24) and AlGaAs system laser device (26) are arranged so that respective stripes (28, 30) are parallel to each other. The AlGaInP system laser device (24) is placed to (011) plane (22b) side from the centerline of the substrate and the AlGaAs system laser device (26) is placed to the (0{overscore (1)}{overscore (1)}) plane (22a) side from the centerline of the substrate when viewed from the main emitting plane (01{overscore (1)}) (22c) side of laser light. Substrate (22) is an off substrate and inclines from the (0{overscore (1)}{overscore (1)}) plane (22a) toward the (011) plane (22b) with respect to the (100) plane at a certain angle (? off) within the range of 2 degrees and 15 degrees. Optical axis L1 of the AlGaInP system laser device (24) is parallel to optical axis L2 of the AlGaAs system laser device (26) and approaches at an angle of about 0.5 degrees.

Abstract: A semiconductor laser device has on a compound semiconductor substrate at least a lower cladding layer, an active layer, an upper cladding layer and a contact layer. An upper part of the upper cladding layer and the contact layer are formed as a mesa-structured portion having a ridge stripe pattern, and the both sides of the mesa structured portion are buried with a current blocking layer. The laser device includes the current blocking layer having a pit-like recess penetrating thereof and extending towards the compound semiconductor substrate, and a portion of the recess other than that penetrating the current blocking layer being covered or buried with an insulating film or a compound semiconductor layer with a high resistivity. The compound semiconductor substrate and the electrode layer thus can be kept insulated in an area other than a current injection area, thereby non-emissive failure due to short-circuit is prevented.

Abstract: A semiconductor laser device having on a compound semiconductor substrate at least a lower cladding layer, an active layer, an upper cladding layer and a contact layer is provided. An upper part of the upper cladding layer and the contact layer are formed as a mesa-structured portion having a ridge stripe pattern, and the both sides of the mesa structured portion are buried with a current blocking layer. The laser device comprises the current blocking layer having a pit-like recess penetrating thereof and extending towards the compound semiconductor substrate, and a portion of the recess other than that penetrating the current blocking layer being covered or buried with an insulating film or a compound semiconductor layer with a high resistivity. The compound semiconductor substrate and the electrode layer thus can be kept insulated in an area other than a current injection area, thereby non-emissive failure due to short-circuit is prevented.

Abstract: AlGaInP system laser device (24) and AlGaAs system laser device (26) are arranged so that respective stripes (28, 30) are parallel to each other. The AlGaInP system laser device (24) is placed to (011) plane (22b) side from the centerline of the substrate and the AlGaAs system laser device (26) is placed to the (0{overscore (1)}{overscore (1)}) plane (22a) side from the centerline of the substrate when viewed from the main emitting plane (01{overscore (1)}) (22c) side of laser light. Substrate (22) is an off substrate and inclines from the (0{overscore (1)}{overscore (1)}) plane (22a) toward the (011) plane (22b) with respect to the (100) plane at a certain angle (&thgr; off) within the range of 2 degrees and 15 degrees. Optical axis L1 of the AlGaInP system laser device (24) is parallel to optical axis L2 of the AlGaAs system laser device (26) and approaches at an angle of about 0.5 degrees.

Abstract: A semiconductor laser device has on a compound semiconductor substrate at least a lower cladding layer, an active layer, an upper cladding layer and a contact layer. An upper part of the upper cladding layer and the contact layer are formed as a mesa-structured portion having a ridge stripe pattern, and both sides of the mesa structured portion are buried with a current blocking layer. The laser device includes the current blocking layer having a pit-like recess penetrating thereof and extending towards the compound semiconductor substrate, and a portion of the recess other than that penetrating the current blocking layer being covered or buried with an insulating film or a compound semiconductor layer with a high resistivity. The compound semiconductor substrate and the electrode layer thus can be kept insulated in an area other than a current injection area, thereby non-emissive failure due to short-circuit is prevented.