Patents by Inventor Nuh Gedik

Nuh Gedik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11837873
    Abstract: Rectification is a process that converts electromagnetic fields into direct current (DC). Such a process underlies a wide range of technologies, including wireless communication, wireless charging, energy harvesting, and infrared detection. Existing rectifiers are mostly based on semiconductor diodes, with limited applicability to small voltages or high frequency inputs. Here, we present an alternative approach to current rectification that uses the electronic properties of quantum crystals without semiconductor junctions. We identify a new mechanism for rectification from skew scattering due to the chirality of itinerant electrons in time-reversal-invariant but inversion-breaking materials. Our calculations reveal large, tunable rectification effects in graphene multilayers and transition metal dichalcogenides. These effects can be used in high-frequency rectifiers by rational material design and quantum wavefunction engineering.
    Type: Grant
    Filed: June 11, 2021
    Date of Patent: December 5, 2023
    Assignee: Massachusetts Institute of Technology
    Inventors: Hiroki Isobe, Qiong Ma, Liang Fu, Nuh Gedik, Suyang Xu, Pablo Jarillo-Herrero
  • Patent number: 11393976
    Abstract: An ultrathin, carbon-based memristor with a moiré superlattice potential shows prominent ferroelectric resistance switching. The memristor includes a bilayer material, such as Bernal-stacked bilayer graphene, encapsulated between two layers of a layered material, such as hexagonal boron nitride. At least one of the encapsulating layers is rotationally aligned with the bilayer to create the moiré superlattice potential. The memristor exhibits ultrafast and robust resistance switching between multiple resistance states at high temperatures. The memristor, which may be volatile or nonvolatile, may be suitable for neuromorphic computing.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: July 19, 2022
    Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    Inventors: Pablo Jarillo-Herrero, Qiong Ma, Nuh Gedik, Suyang Xu, Zhiren Zheng
  • Publication number: 20210384762
    Abstract: Rectification is a process that converts electromagnetic fields into direct current (DC). Such a process underlies a wide range of technologies, including wireless communication, wireless charging, energy harvesting, and infrared detection. Existing rectifiers are mostly based on semiconductor diodes, with limited applicability to small voltages or high frequency inputs. Here, we present an alternative approach to current rectification that uses the electronic properties of quantum crystals without semiconductor junctions. We identify a new mechanism for rectification from skew scattering due to the chirality of itinerant electrons in time-reversal-invariant but inversion-breaking materials. Our calculations reveal large, tunable rectification effects in graphene multilayers and transition metal dichalcogenides. These effects can be used in high-frequency rectifiers by rational material design and quantum wavefunction engineering.
    Type: Application
    Filed: June 11, 2021
    Publication date: December 9, 2021
    Applicant: Massachusetts Institute of Technology
    Inventors: Hiroki Isobe, Qiong MA, Liang FU, Nuh GEDIK, Suyang XU, Pablo Jarillo-Herrero
  • Publication number: 20210217952
    Abstract: An ultrathin, carbon-based memristor with a moiré superlattice potential shows prominent ferroelectric resistance switching. The memristor includes a bilayer material, such as Bernal-stacked bilayer graphene, encapsulated between two layers of a layered material, such as hexagonal boron nitride. At least one of the encapsulating layers is rotationally aligned with the bilayer to create the moiré superlattice potential. The memristor exhibits ultrafast and robust resistance switching between multiple resistance states at high temperatures. The memristor, which may be volatile or nonvolatile, may be suitable for neuromorphic computing.
    Type: Application
    Filed: November 10, 2020
    Publication date: July 15, 2021
    Inventors: Pablo Jarillo-Herrero, Qiong MA, Nuh GEDIK, Suyang XU, Zhiren ZHENG
  • Patent number: 10090466
    Abstract: The generation of photocurrent in an ideal two-dimensional Dirac spectrum is symmetry forbidden. In sharp contrast, a three-dimensional Weyl semimetal can generically support significant photocurrent due to the combination of inversion symmetry breaking and finite tilts of the Weyl spectrum. To realize this photocurrent, a noncentrosymmetric Weyl semimetal is coupled to a pair of electrodes and illuminated with circularly polarized light without any voltage applied to the Weyl semimetal. The wavelength of the incident light can range over tens of microns and can be adjusted by doping the Weyl semimetal to change its chemical potential.
    Type: Grant
    Filed: July 21, 2017
    Date of Patent: October 2, 2018
    Assignee: Massachusetts Institute of Technology
    Inventors: Ching-Kit Chan, Patrick A. Lee, Netanel Lindner, Gil Refael, Qiong Ma, Suyang Xu, Nuh Gedik
  • Publication number: 20180026185
    Abstract: The generation of photocurrent in an ideal two-dimensional Dirac spectrum is symmetry forbidden. In sharp contrast, a three-dimensional Weyl semimetal can generically support significant photocurrent due to the combination of inversion symmetry breaking and finite tilts of the Weyl spectrum. To realize this photocurrent, a noncentrosymmetric Weyl semimetal is coupled to a pair of electrodes and illuminated with circularly polarized light without any voltage applied to the Weyl semimetal. The wavelength of the incident light can range over tens of microns and can be adjusted by doping the Weyl semimetal to change its chemical potential.
    Type: Application
    Filed: July 21, 2017
    Publication date: January 25, 2018
    Applicants: Massachusetts Institute of Technology, California Institute of Technology, Technion R&D Foundation
    Inventors: Ching-Kit CHAN, Patrick A. LEE, Netanel LINDNER, Gil REFAEL, Qiong MA, Suyang XU, Nuh GEDIK
  • Patent number: 9842721
    Abstract: Methods and apparatus for modulating a particle pulse include a succession of Hermite-Gaussian optical modes that effectively construct a three-dimensional optical trap in the particle pulse's rest frame. Optical incidence angles between the propagation of the particle pulse and the optical pulse are tuned for improved compression. Particles pulses that can be modulated by these methods and apparatus include charged particles and particles with non-zero polarizability in the Rayleigh regime. Exact solutions to Maxwell's equations for first-order Hermite-Gaussian beams demonstrate single-electron pulse compression factors of more than 100 in both longitudinal and transverse dimensions. The methods and apparatus are useful in ultrafast electron imaging for both single- and multi-electron pulse compression, and as a means of circumventing temporal distortions in magnetic lenses when focusing ultra-short electron pulses.
    Type: Grant
    Filed: August 23, 2016
    Date of Patent: December 12, 2017
    Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    Inventors: Liang Jie Wong, Byron Freelon, Timm Rohwer, Nuh Gedik, Steven Glenn Johnson
  • Patent number: 9536698
    Abstract: Methods and apparatus for modulating a particle pulse include a succession of Hermite-Gaussian optical modes that effectively construct a three-dimensional optical trap in the particle pulse's rest frame. Optical incidence angles between the propagation of the particle pulse and the optical pulse are tuned for improved compression. Particles pulses that can be modulated by these methods and apparatus include charged particles and particles with non-zero polarizability in the Rayleigh regime. Exact solutions to Maxwell's equations for first-order Hermite-Gaussian beams demonstrate single-electron pulse compression factors of more than 100 in both longitudinal and transverse dimensions. The methods and apparatus are useful in ultrafast electron imaging for both single- and multi-electron pulse compression, and as a means of circumventing temporal distortions in magnetic lenses when focusing ultra-short electron pulses.
    Type: Grant
    Filed: August 21, 2015
    Date of Patent: January 3, 2017
    Assignee: Massachusetts Institute of Technology
    Inventors: Liang Jie Wong, Byron Freelon, Timm Rohwer, Nuh Gedik, Steven Glenn Johnson
  • Publication number: 20160372300
    Abstract: Methods and apparatus for modulating a particle pulse include a succession of Hermite-Gaussian optical modes that effectively construct a three-dimensional optical trap in the particle pulse's rest frame. Optical incidence angles between the propagation of the particle pulse and the optical pulse are tuned for improved compression. Particles pulses that can be modulated by these methods and apparatus include charged particles and particles with non-zero polarizability in the Rayleigh regime. Exact solutions to Maxwell's equations for first-order Hermite-Gaussian beams demonstrate single-electron pulse compression factors of more than 100 in both longitudinal and transverse dimensions. The methods and apparatus are useful in ultrafast electron imaging for both single- and multi-electron pulse compression, and as a means of circumventing temporal distortions in magnetic lenses when focusing ultra-short electron pulses.
    Type: Application
    Filed: August 23, 2016
    Publication date: December 22, 2016
    Inventors: Liang Jie Wong, Byron Freelon, Timm Rohwer, Nuh Gedik, Steven Glenn Johnson
  • Patent number: 9455114
    Abstract: Methods and apparatus for modulating a particle pulse include a succession of Hermite-Gaussian optical modes that effectively construct a three-dimensional optical trap in the particle pulse's rest frame. Optical incidence angles between the propagation of the particle pulse and the optical pulse are tuned for improved compression. Particles pulses that can be modulated by these methods and apparatus include charged particles and particles with non-zero polarizability in the Rayleigh regime. Exact solutions to Maxwell's equations for first-order Hermite-Gaussian beams demonstrate single-electron pulse compression factors of more than 100 in both longitudinal and transverse dimensions. The methods and apparatus are useful in ultrafast electron imaging for both single- and multi-electron pulse compression, and as a means of circumventing temporal distortions in magnetic lenses when focusing ultra-short electron pulses.
    Type: Grant
    Filed: August 21, 2015
    Date of Patent: September 27, 2016
    Assignee: Massachusetts Institute of Technology
    Inventors: Liang Jie Wong, Byron Freelon, Timm Rohwer, Nuh Gedik, Steven Glenn Johnson
  • Publication number: 20160056010
    Abstract: Methods and apparatus for modulating a particle pulse include a succession of Hermite-Gaussian optical modes that effectively construct a three-dimensional optical trap in the particle pulse's rest frame. Optical incidence angles between the propagation of the particle pulse and the optical pulse are tuned for improved compression. Particles pulses that can be modulated by these methods and apparatus include charged particles and particles with non-zero polarizability in the Rayleigh regime. Exact solutions to Maxwell's equations for first-order Hermite-Gaussian beams demonstrate single-electron pulse compression factors of more than 100 in both longitudinal and transverse dimensions. The methods and apparatus are useful in ultrafast electron imaging for both single- and multi-electron pulse compression, and as a means of circumventing temporal distortions in magnetic lenses when focusing ultra-short electron pulses.
    Type: Application
    Filed: August 21, 2015
    Publication date: February 25, 2016
    Inventors: Liang Jie Wong, Byron Freelon, Timm Rohwer, Nuh Gedik, Steven Glenn Johnson