Patents by Inventor Nung-Che Cheng

Nung-Che Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Germanium hump reduction
    Patent number: 11854819
    Abstract: The present disclosure provides methods of forming semiconductor devices. A method according to the present disclosure includes receiving a workpiece that includes a stack of semiconductor layers, depositing a first pad oxide layer on a germanium-containing top layer of the stack, depositing a second pad oxide layer on the first pad oxide layer, depositing a pad nitride layer on the second pad oxide layer, and patterning the stack using the first pad oxide layer, the second pad oxide layer, and the pad nitride layer as a hard mask layer. The depositing of the first pad oxide layer includes a first oxygen plasma power and the depositing of the second pad oxide layer includes a second oxygen plasma power greater than the first oxygen plasma power.
    Type: Grant
    Filed: July 22, 2022
    Date of Patent: December 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Hao Fu, Hung-Ju Chou, Che-Lun Chang, Jiun-Ming Kuo, Yuan-Ching Peng, Sung-En Lin, Nung-Che Cheng, Chunyao Wang
  • Germanium Hump Reduction
    Publication number: 20220375756
    Abstract: The present disclosure provides methods of forming semiconductor devices. A method according to the present disclosure includes receiving a workpiece that includes a stack of semiconductor layers, depositing a first pad oxide layer on a germanium-containing top layer of the stack, depositing a second pad oxide layer on the first pad oxide layer, depositing a pad nitride layer on the second pad oxide layer, and patterning the stack using the first pad oxide layer, the second pad oxide layer, and the pad nitride layer as a hard mask layer. The depositing of the first pad oxide layer includes a first oxygen plasma power and the depositing of the second pad oxide layer includes a second oxygen plasma power greater than the first oxygen plasma power.
    Type: Application
    Filed: July 22, 2022
    Publication date: November 24, 2022
    Inventors: Shih-Hao Fu, Hung-Ju Chou, Che-Lun Chang, Jiun-Ming Kuo, Yuan-Ching Peng, Sung-En Lin, Nung-Che Cheng, Chunyao Wang
  • Germanium hump reduction
    Patent number: 11437245
    Abstract: The present disclosure provides methods of forming semiconductor devices. A method according to the present disclosure includes receiving a workpiece that includes a stack of semiconductor layers, depositing a first pad oxide layer on a germanium-containing top layer of the stack, depositing a second pad oxide layer on the first pad oxide layer, depositing a pad nitride layer on the second pad oxide layer, and patterning the stack using the first pad oxide layer, the second pad oxide layer, and the pad nitride layer as a hard mask layer. The depositing of the first pad oxide layer includes a first oxygen plasma power and the depositing of the second pad oxide layer includes a second oxygen plasma power greater than the first oxygen plasma power.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: September 6, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Hao Fu, Hung-Ju Chou, Che-Lun Chang, Jiun-Ming Kuo, Yuan-Ching Peng, Sung-En Lin, Nung-Che Cheng, Chunyao Wang
  • Germanium Hump Reduction
    Publication number: 20220102151
    Abstract: The present disclosure provides methods of forming semiconductor devices. A method according to the present disclosure includes receiving a workpiece that includes a stack of semiconductor layers, depositing a first pad oxide layer on a germanium-containing top layer of the stack, depositing a second pad oxide layer on the first pad oxide layer, depositing a pad nitride layer on the second pad oxide layer, and patterning the stack using the first pad oxide layer, the second pad oxide layer, and the pad nitride layer as a hard mask layer. The depositing of the first pad oxide layer includes a first oxygen plasma power and the depositing of the second pad oxide layer includes a second oxygen plasma power greater than the first oxygen plasma power.
    Type: Application
    Filed: September 30, 2020
    Publication date: March 31, 2022
    Inventors: Shih-Hao Fu, Hung-Ju Chou, Che-Lun Chang, Jiun-Ming Kuo, Yuan-Ching Peng, Sung-En Lin, Nung-Che Cheng, Chunyao Wang