Patents by Inventor NUNO YEN-CHU CHEN
NUNO YEN-CHU CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11929260Abstract: Embodiments of methods and apparatus for reducing warpage of a substrate are provided herein. In some embodiments, a method for reducing warpage of a substrate includes: applying an epoxy mold over a plurality of dies on the substrate in a dispenser tool; placing the substrate on a pedestal in a curing chamber, wherein the substrate has an expected post-cure deflection in a first direction; inducing a curvature on the substrate in a direction opposite the first direction; and curing the substrate by heating the substrate in the curing chamber.Type: GrantFiled: August 24, 2021Date of Patent: March 12, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Fang Jie Lim, Chin Wei Tan, Jun-Liang Su, Felix Deng, Sai Kumar Kodumuri, Ananthkrishna Jupudi, Nuno Yen-Chu Chen
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Patent number: 11610807Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.Type: GrantFiled: April 11, 2021Date of Patent: March 21, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Felix Deng, Yueh Sheng Ow, Tuck Foong Koh, Nuno Yen-Chu Chen, Yuichi Wada, Sree Rangasai V. Kesapragada, Clinton Goh
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Publication number: 20230061379Abstract: Embodiments of methods and apparatus for reducing warpage of a substrate are provided herein. In some embodiments, a method for reducing warpage of a substrate includes: applying an epoxy mold over a plurality of dies on the substrate in a dispenser tool; placing the substrate on a pedestal in a curing chamber, wherein the substrate has an expected post-cure deflection in a first direction; inducing a curvature on the substrate in a direction opposite the first direction; and curing the substrate by heating the substrate in the curing chamber.Type: ApplicationFiled: August 24, 2021Publication date: March 2, 2023Inventors: Fang Jie LIM, Chin Wei TAN, Jun-Liang SU, Felix DENG, Sai Kumar KODUMURI, Ananthkrishna JUPUDI, Nuno Yen-Chu CHEN
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Patent number: 11569122Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.Type: GrantFiled: March 30, 2021Date of Patent: January 31, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Felix Deng, Yueh Sheng Ow, Tuck Foong Koh, Nuno Yen-Chu Chen, Yuichi Wada, Sree Rangasai V. Kesapragada, Clinton Goh
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Patent number: 11375584Abstract: Methods and apparatus for processing a substrate are provided herein. The apparatus can include, for example, a microwave energy source configured to provide microwave energy from beneath a substrate support provided in an inner volume of the process chamber; a first microwave reflector positioned on the substrate support above a substrate supporting position of the substrate support; and a second microwave reflector positioned on the substrate support beneath the substrate supporting position, wherein the first microwave reflector and the second microwave reflector are positioned and configured such that microwave energy passes through the second microwave reflector and some of the microwave energy is reflected from a bottom surface of the first microwave reflector back to the substrate during operation.Type: GrantFiled: August 20, 2019Date of Patent: June 28, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Tuck Foong Koh, Yueh Sheng Ow, Nuno Yen-Chu Chen, Ananthkrishna Jupudi, Preetham P. Rao
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Publication number: 20210233802Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.Type: ApplicationFiled: April 11, 2021Publication date: July 29, 2021Inventors: Felix DENG, Yueh Sheng OW, Tuck Foong KOH, Nuno Yen-Chu CHEN, Yuichi WADA, Sree Rangasai V. KESAPRAGADA, Clinton GOH
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Publication number: 20210217656Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.Type: ApplicationFiled: March 30, 2021Publication date: July 15, 2021Inventors: Felix DENG, Yueh Sheng OW, Tuck Foong KOH, Nuno Yen-Chu CHEN, Yuichi WADA, Sree Rangasai V. KESAPRAGADA, Clinton GOH
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Patent number: 10991617Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.Type: GrantFiled: May 6, 2019Date of Patent: April 27, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Felix Deng, Yueh Sheng Ow, Tuck Foong Koh, Nuno Yen-Chu Chen, Yuichi Wada, Sree Rangasai V Kesapragada, Clinton Goh
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Publication number: 20210059017Abstract: Methods and apparatus for processing a substrate are provided herein. The apparatus can include, for example, a microwave energy source configured to provide microwave energy from beneath a substrate support provided in an inner volume of the process chamber; a first microwave reflector positioned on the substrate support above a substrate supporting position of the substrate support; and a second microwave reflector positioned on the substrate support beneath the substrate supporting position, wherein the first microwave reflector and the second microwave reflector are positioned and configured such that microwave energy passes through the second microwave reflector and some of the microwave energy is reflected from a bottom surface of the first microwave reflector back to the substrate during operation.Type: ApplicationFiled: August 20, 2019Publication date: February 25, 2021Inventors: TUCK FOONG KOH, YUEH SHENG OW, NUNO YEN-CHU CHEN, ANANTHKRISHNA JUPUDI, PREETHAM P. RAO
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Publication number: 20210001520Abstract: Methods and apparatus for curing a substrate or polymer using variable microwave frequency are provided herein. In some embodiments, a method of curing a substrate or polymer using variable microwave frequency includes: contacting a substrate or polymer with a plurality of predetermined discontinuous microwave energy bandwidths or a plurality of predetermined discontinuous microwave energy frequencies to cure the substrate or polymer.Type: ApplicationFiled: July 2, 2020Publication date: January 7, 2021Inventors: Tuck Foong KOH, Chien-Kang HSIUNG, Yueh Sheng OW, Felix DENG, Yue CUI, Nuno Yen-Chu CHEN, Ananthkrishna JUPUDI, Clinton GOH, Vinodh RAMACHANDRAN
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Publication number: 20200206775Abstract: Methods of curing a polymer layer on a substrate using variable microwave frequency are provided herein. In some embodiments, methods of curing a polymer layer on a substrate using variable microwave frequency include (a) forming a first thin-film polymer layer on a substrate, the first thin-film polymer layer including at least one first base dielectric material and at least one microwave tunable material, (b) applying a variable frequency microwave energy to the substrate and the first thin-film polymer layer to heat the substrate and the first thin-film polymer layer to a first temperature, and (c) adjusting the variable frequency microwave energy applied to the substrate and the first thin-film polymer layer to tune at least one material property of the first thin-film polymer layer.Type: ApplicationFiled: May 31, 2019Publication date: July 2, 2020Inventors: Yueh Sheng Ow, Yue Cui, Arvind Sundarrajan, Nuno Yen-Chu Chen, Guan Huei See, Felix Deng
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Publication number: 20190355616Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.Type: ApplicationFiled: May 6, 2019Publication date: November 21, 2019Inventors: FELIX DENG, YUEH SHENG OW, TUCK FOONG KOH, NUNO YEN-CHU CHEN, YUICHI WADA, SREE RANGASAI V KESAPRAGADA, CLINTON GOH
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Patent number: D1007449Type: GrantFiled: May 7, 2021Date of Patent: December 12, 2023Assignee: APPLIED MATERIALS, INC.Inventors: David Gunther, Kirankumar Neelasandra Savandaiah, Jiao Song, Madan Kumar Shimoga Mylarappa, Yue Cui, Nuno Yen-Chu Chen, Mengxue Wu