Abstract: The specification describes an analytical technique for determining trace levels of copper in a background matrix of titanium by dissolving the titanium and the copper impurity in HF, then selectively depositing the copper on a clean silicon surface. The silicon surface is then analyzed for the trace level of copper.

Abstract: Integrated-circuit devices are provided with conductive paths or links which, by laser irradiation or electric current pulsing, can be severed or fused. In the interest of ease of fusing, preferred links have locally reduced thickness as achieved, e.g., by employing two steps of layer deposition and etching as follows: first, a layer of conductor material is deposited on a dielectric surface, and locally reduced in thickness by etching at one or several points selected for fusing, and, second, a further layer of conductor material is deposited, and then etched to produce a desired conductive path passing through such points.

Abstract: Integrated-circuit devices are provided with conductive paths or links which, by laser irradiation or electric current pulsing, can be severed or fused. In the interest of ease of fusing, preferred links have locally reduced thickness as achieved, e.g., by employing two steps of layer deposition and etching as follows: first, a layer of conductor material is deposited on a dielectric surface, and locally reduced in thickness by etching at one or several points selected for fusing, and, second, a further layer of conductor material is deposited, and then etched to produce a desired conductive path passing through such points.

Abstract: A method for etching metal layers including aluminum to create tapered sidewalls is disclosed. The method features the use of trifluoromethane and chlorine in controlled amounts to create a tapered metal layer profile.