Patents by Inventor Nuri Oh
Nuri Oh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11901178Abstract: A production method of a quantum dot comprising a Group IIIA-VA compound, the quantum dot as prepared, and an electronic device including the same, and the production method includes: supplying a Group VA element precursor including a halide of a Group VA element and a first ligand of a phosphine compound or a first amine compound; and performing a reaction between the Group VA element precursor and a Group IIIA metal precursor in the presence of a reducing agent in an organic reaction medium including a second amine compound.Type: GrantFiled: March 1, 2021Date of Patent: February 13, 2024Assignees: SAMSUNG ELECTRONICS CO., LTD., THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIAInventors: Tae Gon Kim, Nuri Oh, Tianshuo Zhao, Cherie Kagan, Eun Joo Jang, Christopher Murray
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Publication number: 20230200095Abstract: An electronic device and a production method thereof, wherein the electronic device includes: a semiconductor layer comprising a plurality of quantum dots; and a first electrode and a second electrode spaced apart from each other; wherein the plurality of quantum dots do not comprise cadmium, lead, or mercury; wherein the plurality of quantum dots comprise indium and optionally gallium; a Group VA element, wherein the Group VA element comprises antimony, arsenic, or a combination thereof, and a molar ratio of the Group VA element with respect to the Group IIIA metal (e.g., indium) is less than or equal to about 1.2:1, and wherein the semiconductor layer may be disposed between the first electrode and the second electrode.Type: ApplicationFiled: February 13, 2023Publication date: June 22, 2023Inventors: Tae Gon KIM, Tianshuo ZHAO, Nuri OH, Cherie KAGAN, Eun Joo JANG, Christopher MURRAY
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Patent number: 11581501Abstract: An electronic device and a production method thereof, wherein the electronic device includes: a semiconductor layer comprising a plurality of quantum dots; and a first electrode and a second electrode spaced apart from each other; wherein the plurality of quantum dots do not comprise cadmium, lead, or mercury; wherein the plurality of quantum dots comprise indium and optionally gallium; a Group VA element, wherein the Group VA element comprises antimony, arsenic, or a combination thereof, and a molar ratio of the Group VA element with respect to the Group IIIA metal (e.g., indium) is less than or equal to about 1.2:1, and wherein the semiconductor layer may be disposed between the first electrode and the second electrode.Type: GrantFiled: June 14, 2019Date of Patent: February 14, 2023Assignees: SAMSUNG ELECTRONICS CO., LTD., THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIAInventors: Tae Gon Kim, Tianshuo Zhao, Nuri Oh, Cherie Kagan, Eun Joo Jang, Christopher Murray
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Publication number: 20230043487Abstract: Disclosed are a surface-modified quantum dot surface-modified with a ligand complex having a specific structure on the surface of the semiconductor nanocrystal, a method for preparing the same, and a quantum dot-polymer composite or electronic device including the same.Type: ApplicationFiled: August 4, 2022Publication date: February 9, 2023Applicants: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY, IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)Inventors: Gyuweon HWANG, Taehwan PARK, Hyeri YOO, Sangtae KIM, Nuri OH, Seungki SHIN, Namyoung GWAK
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Patent number: 11121190Abstract: Provided is an optoelectronic device comprising an optoelectronic element and circuitry connected to the optoelectronic element, wherein the optoelectronic element comprises plural quantum dots or plural nanorods, and wherein the circuitry is configured to be capable of switching the optoelectronic element between a configuration in which the circuitry provides an effective forward bias voltage that causes the optoelectronic element to emit light and a configuration in which the circuitry provides an effective reverse bias voltage that causes the optoelectronic element to be capable of generating a photocurrent when light to which the optoelectronic element is sensitive strikes the optoelectronic element.Type: GrantFiled: March 23, 2017Date of Patent: September 14, 2021Assignees: Dow Global Technologies LLC, Rohm and Haas Company, The Board of Trustees of the University of Illinois, Rohm and Haas Electronic Materials LLCInventors: Peter Trefonas, III, Kishori Deshpande, Trevor Ewers, Edward Greer, Jaebum Joo, Bong Hoon Kim, Nuri Oh, Jong Keun Park, Moonsub Shim, Jieqian Zhang
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Publication number: 20210225641Abstract: A production method of a quantum dot comprising a Group IIIA-VA compound, the quantum dot as prepared, and an electronic device including the same, and the production method includes: supplying a Group VA element precursor including a halide of a Group VA element and a first ligand of a phosphine compound or a first amine compound; and performing a reaction between the Group VA element precursor and a Group IIIA metal precursor in the presence of a reducing agent in an organic reaction medium including a second amine compound.Type: ApplicationFiled: March 1, 2021Publication date: July 22, 2021Inventors: Tae Gon KIM, Nuri OH, Tianshuo ZHAO, Cherie KAGAN, Eun Joo JANG, Christopher MURRAY
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Patent number: 10950427Abstract: A production method of a quantum dot comprising a Group IIIA-VA compound, the quantum dot as prepared, and an electronic device including the same, and the production method includes: supplying a Group VA element precursor including a halide of a Group VA element and a first ligand of a phosphine compound or a first amine compound; and performing a reaction between the Group VA element precursor and a Group IIIA metal precursor in the presence of a reducing agent in an organic reaction medium including a second amine compound.Type: GrantFiled: June 14, 2019Date of Patent: March 16, 2021Assignees: SAMSUNG ELECTRONICS CO., LTD., THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIAInventors: Tae Gon Kim, Nuri Oh, Tianshuo Zhao, Cherie Kagan, Eun Joo Jang, Christopher Murray
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Patent number: 10949026Abstract: Provided is a method of creating an image on an array of optoelectronic elements comprising (a) providing a device comprising an array of optoelectronic elements and circuitry connected to each optoelectronic element, wherein the optoelectronic element comprises plural quantum dots or plural nanorods, and wherein the circuitry is configured to be capable of switching each optoelectronic element independently between an effective forward bias configuration and a reverse-bias configuration, (b) imposing an effective reverse bias on two or more of the optoelectronic elements, (c) providing circuitry that will detect the onset of photocurrent from an individual effective reverse biased optoelectronic element and that will respond to the photocurrent by changing the bias on the individual optoelectronic element to an effective forward bias.Type: GrantFiled: March 23, 2017Date of Patent: March 16, 2021Assignees: Dow Global Technologies LLC, Rohm and Haas Company, The Board of Trustees of the University of Illinois, Rohm and Haas Electronic Materials LLCInventors: Peter Trefonas, III, Seongyong Cho, Kishori Deshpande, Trevor Ewers, Jaebum Joo, Edward Greer, Bong Hoon Kim, Nuri Oh, Jong Keun Park, Moonsub Shim, Jieqian Zhang
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Publication number: 20210005668Abstract: Provided is a device comprising a light-emitting optoelectronic element and a photocurrent-generating optoelectronic element, wherein the device further comprises an opaque element that prevents light emitted by the light-emitting optoelectronic element from reaching the photocurrent-generating optoelectronic element via a pathway within the device.Type: ApplicationFiled: March 23, 2017Publication date: January 7, 2021Inventors: Peter Trefonas, III, Seongyong Cho, Kishori Deshpande, Trevor Ewers, Edward Greer, Jaebum Joo, Nuri Oh, Jong Keun Park, Moonsub Shim, Jieqian Zhang
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Publication number: 20190393435Abstract: An electronic device and a production method thereof, wherein the electronic device includes: a semiconductor layer comprising a plurality of quantum dots; and a first electrode and a second electrode spaced apart from each other; wherein the plurality of quantum dots do not comprise cadmium, lead, or mercury; wherein the plurality of quantum dots comprise indium and optionally gallium; a Group VA element, wherein the Group VA element comprises antimony, arsenic, or a combination thereof, and a molar ratio of the Group VA element with respect to the Group IIIA metal (e.g., indium) is less than or equal to about 1.2:1, and wherein the semiconductor layer may be disposed between the first electrode and the second electrode.Type: ApplicationFiled: June 14, 2019Publication date: December 26, 2019Inventors: Tae Gon KIM, Tianshuo ZHAO, Nuri OH, Cherie KAGAN, Eun Joo JANG, Christopher MURRAY
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Publication number: 20190385839Abstract: A production method of a quantum dot comprising a Group IIIA-VA compound, the quantum dot as prepared, and an electronic device including the same, and the production method includes: supplying a Group VA element precursor including a halide of a Group VA element and a first ligand of a phosphine compound or a first amine compound; and performing a reaction between the Group VA element precursor and a Group IIIA metal precursor in the presence of a reducing agent in an organic reaction medium including a second amine compound.Type: ApplicationFiled: June 14, 2019Publication date: December 19, 2019Inventors: Tae Gon KIM, Nuri OH, Tianshuo ZHAO, Cherie KAGAN, Eun Joo JANG, Christopher MURRAY
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Patent number: 10510924Abstract: Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; and two first endcaps, one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction; where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction; and where the first semiconductor and the second semiconductor are chemically different from each other.Type: GrantFiled: January 16, 2015Date of Patent: December 17, 2019Assignees: The Board of Trustees of the University of Illinois, Rohm and Haas Electronic Materials LLC, Dow Global Technologies LLCInventors: Moonsub Shim, Nuri Oh, You Zhai, Sooji Nam, Peter Trefonas, III, Kishori Deshpande, Jake Joo
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Publication number: 20190172878Abstract: Provided is an optoelectronic device comprising an optoelectronic element and circuitry connected to the optoelectronic element, wherein the optoelectronic element comprises plural quantum dots or plural nanorods, and wherein the circuitry is configured to be capable of switching the optoelectronic element between a configuration in which the circuitry provides an effective forward bias voltage that causes the optoelectronic element to emit light and a configuration in which the circuitry provides an effective reverse bias voltage that causes the optoelectronic element to be capable of generating a photocurrent when light to which the optoelectronic element is sensitive strikes the optoelectronic element.Type: ApplicationFiled: March 23, 2017Publication date: June 6, 2019Inventors: Peter Trefonas, III, Kishori Deshpande, Trevor Ewers, Edward Greer, Jaebum Joo, Bong Hoon Kim, Nuri Oh, Jong Keun Park, Moonsub Shim, Jieqian Zhang
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Publication number: 20190114032Abstract: Provided is a method of creating an image on an array of optoelectronic elements comprising (a) providing a device comprising an array of optoelectronic elements and circuitry connected to each optoelectronic element, wherein the optoelectronic element comprises plural quantum dots or plural nanorods, and wherein the circuitry is configured to be capable of switching each optoelectronic element independently between an effective forward bias configuration and a reverse-bias configuration, (b) imposing an effective reverse bias on two or more of the optoelectronic elements, (c) providing circuitry that will detect the onset of photocurrent from an individual effective reverse biased optoelectronic element and that will respond to the photocurrent by changing the bias on the individual optoelectronic element to an effective forward bias.Type: ApplicationFiled: March 23, 2017Publication date: April 18, 2019Inventors: Peter Trefonas, III, Seongyong Cho, Kishori Deshpande, Trevor Ewers, Jaebum Joo, Edward Greer, Bong Hoon Kim, Nuri Oh, Jong Keun Park, Moonsub Shim, Jieqian Zhang
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Publication number: 20190109290Abstract: Provided is a method of detecting the presence of an object in proximity to an optoelectronic device comprising (a) providing an optoelectronic device comprising a light-emitting optoelectronic element and a photocurrent-generating optoelectronic element, (b) imposing an effective forward bias voltage on the light-emitting optoelectronic element and an effective reverse bias voltage on the photocurrent-generating optoelectronic element, (c) bringing an object capable of scattering or reflecting light or a combination thereof to a distance of 0.1 to 5 mm from a point on the surface of the optoelectronic device from which light emerges, causing light that is emitted by the light-emitting optoelectronic element to be reflected or scattered so that the light falls upon the photocurrent-generating optoelectronic element.Type: ApplicationFiled: March 23, 2017Publication date: April 11, 2019Applicants: Dow Global Technologies LLC, Rohm And Haas Company, The Board of Trustees of the University of Illinois, Rohm and Haas Electronic MaterialsInventors: Peter Trefonas, III, Kishori Deshpande, Trevor Ewers, Edward Greer, Jaebum Joo, Bong Hoon Kim, Nuri Oh, John Rogers, Moonsub Shim, Jieqian Zhang
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Publication number: 20180273844Abstract: Methods and systems for producing nanostructure materials are provided. In one aspect, a process is provided that comprises a) heating one or more nanostructure material reagents by 100° C. or more within 5 seconds or less; and b) reacting the nanostructure material reagents to form a nanostructure material reaction product. In a further aspect, a process is provided comprising a) flowing a fluid composition comprising one or more nanostructure material reagents through a reactor system; and b) reacting the nanostructure material reagents to form a nanostructure material reaction product comprising Cd, In or Zn. In a yet further aspect, methods are provided that include flowing one or more nanostructure material reagents through a first reaction unit; cooling the one or more nanostructure material reagents or reaction product thereof that have flowed through the first reaction unit; and flowing the cooled one or more nanostructure material reagents or reaction product thereof through a second reaction unit.Type: ApplicationFiled: February 13, 2016Publication date: September 27, 2018Inventors: Kishori Deshpande, Peter Trefonas, III, Jieqian Zhang, Vivek Kumar, Nuri Oh, Andy You Zhai, Paul Kenis, Moonsub Shim
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Publication number: 20160365478Abstract: In one aspect, methods are provided for fabrication of multiple layers of a nanostructure material composite, and devices produced by such methods. In another aspect, methods are provided that include use of an overcoating fluoro-containing layer that can facilitate transfer of a nanostructure material layer, and devices produced by such methods.Type: ApplicationFiled: December 19, 2014Publication date: December 15, 2016Inventors: Moonsub Shim, Nuri Oh, You Zhai, Sooji Nam, John A. Rogers, Bong Hoon Kim, Sang Y. Yang, Peter Trefonas, III, Kishori Deshpande, Jaebum Joo, Jieqian J. Zhang, Jong Keun Park
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Publication number: 20160225946Abstract: Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; a first node that comprises a first semiconductor; where the first node contacts a radial surface of the one-dimensional semiconducting nanoparticle producing a first heterojunction at the point of contact; and a second node that comprises a second semiconductor; where the second node contacts the radial surface of the one-dimensional semiconducting nanoparticle producing a second heterojunction at the point of contact; where the first heterojunction is compositionally different from the second heterojunction.Type: ApplicationFiled: August 31, 2015Publication date: August 4, 2016Inventors: Moonsub Shim, Nuri Oh, You Zhai, Sooji Nam, Peter Trefonas, III, Kishori Deshpande, Jake Joo
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Publication number: 20150364645Abstract: Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; and two first endcaps, one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction; where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction; and where the first semiconductor and the second semiconductor are chemically different from each other.Type: ApplicationFiled: January 16, 2015Publication date: December 17, 2015Inventors: Moonsub Shim, Nuri Oh, You Zhai, Sooji Nam, Peter Trefonas, Kishori Deshpande, Jake Joo
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Patent number: 9123638Abstract: Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; a first node that comprises a first semiconductor; where the first node contacts a radial surface of the one-dimensional semiconducting nanoparticle producing a first heterojunction at the point of contact; and a second node that comprises a second semiconductor; where the second node contacts the radial surface of the one-dimensional semiconducting nanoparticle producing a second heterojunction at the point of contact; where the first heterojunction is compositionally different from the second heterojunction.Type: GrantFiled: March 15, 2013Date of Patent: September 1, 2015Assignees: Rohm and Haas Electronic Materials, LLC, The University of Illinois, The Office of Technology Management, Dow Global Technologies LLCInventors: Moonsub Shim, Nuri Oh, You Zhai, Sooji Nam, Peter Trefonas, Kishori Deshpande, Jake Joo