Abstract: A material is manufactured from a transformative process of heating a structure comprising a transparent conductive oxide disposed over a semiconductor material. The heating process causes a p-type dopant from the semiconductor material diffuses into the transparent conductive oxide, and causes the semiconductor material to transform into an intrinsic semiconductor layer over a bulk layer. The material manufactured exhibits photovoltaic properties because the layers formed during the transformative process create a p-i-n or a p-n junction having a band-gap difference between the top layer and the bulk layer.