Abstract: A radio-frequency module has radio-frequency input and outputs and a radio-frequency core connected between them and configured to transition between operational states.

Abstract: A method for fabricating a semiconductor die is provided. The method can include providing a semiconductor substrate, forming a set of field-effect transistors on the semiconductor substrate, each field-effect transistor in the set of field-effect transistors having a respective source, drain, gate, and body, forming a compensation circuit on the semiconductor substrate, and connecting the compensation circuit to the set of field-effect transistors in parallel, the compensation circuit configured to compensate a non-linearity effect generated by the set of field-effect transistors.

Abstract: Disclosed is silicon on insulator (SOI) radio frequency (RF) module with noise reduction shielding to mitigate radio frequency interference (RFI) between active circuit devices within the module. The RF module includes various semiconductor active devices disposed upon an insulating substrate. The RF module can be a front-end module (FEM) with one or more charge pumps as active devices. A polysilicon web extends between and underneath the devices to create a network of ground paths across a surface of the insulating substrate. The ground paths effectively conduct RF noise to a circuit ground, causing the polysilicon ground web to eliminate or substantially attenuate RFI produced by the active devices without altering signal characteristics of the RF module. The disclosed solution also reduces RF noise leakage into the substrate, and can reduce RFI between neighboring RF modules.

Abstract: Disclosed is a silicon on insulator (SOI) radio frequency (RF) module with noise reduction shielding to mitigate radio frequency interference (RFI) between active circuit devices within the module. The RF module includes various semiconductor active devices disposed upon an insulating substrate. The RF module can be a front-end module (FEM) with one or more charge pumps as active devices. A polysilicon web extends between and underneath the devices to create a network of ground paths across a surface of the insulating substrate. The ground paths effectively conduct RF noise to a circuit ground, causing the polysilicon ground web to eliminate or substantially attenuate RFI produced by the active devices without altering signal characteristics of the RF module. The disclosed solution also reduces RF noise leakage into the substrate, and can reduce RFI between neighboring RF modules.

Abstract: Devices and methods for switch body connections to achieve soft breakdown. In some embodiments, a method of implementing a radio-frequency switching device can include providing an assembly of source, gate, and drain implemented on an active region; providing a first body contact implemented at a first end of the assembly; and providing a second body contact implemented at a second end of the assembly, the second end distal from the first end along a width of the radio-frequency switching device.

Abstract: Devices and methods for switch body connections to achieve soft breakdown. In some embodiments, a field-effect transistor (FET) can include an assembly of source, gate, and drain implemented on an active region, a first body contact implemented at a first end of the assembly, and a second body contact implemented at a second end of the assembly. The second end can be distal from the first end along a width of the field-effect transistor.

Abstract: According to some aspects of this disclosure a radio frequency signal coupler is provided. The radio frequency coupler includes an input port, an output port, a main transmission line extending between the input port and the output port, a coupled transmission line electromagnetically coupled to the main transmission line, at least one coupled port coupled to the coupled transmission line, and a plurality of termination ports connected to the coupled transmission line, each termination port of the plurality of termination ports being connected to the coupled transmission line at a different location to provide a plurality of coupling factors corresponding to a plurality of signal frequencies.

Abstract: Radio-frequency switch having improved linearity. In some embodiments, a radio-frequency switch circuit can include first and second switch arms, with each switch arm including a plurality of transistors arranged in series to form a stack between a first node and a second node. The first node of the first switch arm can be coupled to the first node of the second switch arm. The radio-frequency switch circuit can further include an amplitude-phase cancelling block implemented across one or more transistors of each switch arm, and configured such that a third harmonic resulting from an ON state of the first switch arm is substantially canceled by a third harmonic resulting from an OFF state of the second switch arm.

Abstract: Examples of the disclosure include a coupler comprising an input port, an output port, a coupled port, an isolated port, a main line coupled between the input port and the output port, a coupled line coupled between the coupled port and the isolated port, and at least one capacitive element switchably coupled between at least one of the input port or the main line and at least one of the coupled port or the coupled line.

Abstract: Examples of the disclosure include a coupler comprising an input port, an output port, a coupled port, an isolated port, a main line coupled between the input port and the output port, a coupled line coupled between the coupled port and isolated port, and one or more elements switchably coupled between the coupled port and the isolated port, the one or more elements including at least one of an inductive, capacitive, or resistive element.

Abstract: A radio frequency signal coupler includes an input port, an output port, a main transmission line coupled between the input port and the output port, and a coupled transmission line electromagnetically coupled to the main transmission line. The coupled transmission line includes a first transmission line, a second transmission line, and a switch configured to couple the first and second transmission lines during a first mode of operation and to decouple the first and second transmission lines during a second mode of operation. The radio frequency couple can be used in a front end module of a communications device, such as a mobile phone.

Abstract: A method for fabricating a semiconductor die is provided. The method can include providing a semiconductor substrate, forming a set of field-effect transistors on the semiconductor substrate, each field-effect transistor in the set of field-effect transistors having a respective source, drain, gate, and body, forming a compensation circuit on the semiconductor substrate, and connecting the compensation circuit to the set of field-effect transistors in parallel, the compensation circuit configured to compensate a non-linearity effect generated by the set of field-effect transistors.

Abstract: Radio-frequency switch having improved linearity. In some embodiments, a radio-frequency switch circuit can include first and second switch arms, with each switch arm including a plurality of transistors arranged in series to form a stack between a first node and a second node. The first node of the first switch arm can be coupled to the first node of the second switch arm. The radio-frequency switch circuit can further include an amplitude-phase cancelling block implemented across one or more transistors of each switch arm, and configured such that a third harmonic resulting from an ON state of the first switch arm is substantially canceled by a third harmonic resulting from an OFF state of the second switch arm.

Abstract: A radio-frequency switch is disclosed, comprising a set of field-effect transistors disposed between a first node and a second node. In some embodiments, each field-effect transistor of the set of field-effect transistors has a respective source, drain, gate, and body. In some embodiments, the radio-frequency switch includes a compensation circuit coupled in parallel with the set of field-effect transistors, the compensation circuit configured to compensate a non-linearity effect generated by the set of field-effect transistors.

Abstract: Amplitude-phase canceling circuit for switch linearity. In some embodiments, a radio-frequency switch circuit can include first and second switch arms, with each switch arm including a plurality of transistors arranged in series to form a stack between a first node and a second node. The first node of the first switch arm can be coupled to the first node of the second switch arm. The radio-frequency switch circuit can further include an amplitude-phase cancelling block implemented across one or more transistors of each switch arm, and configured such that a third harmonic resulting from an ON state of the first switch arm is substantially canceled by a third harmonic resulting from an OFF state of the second switch arm.

Abstract: Devices and methods for switch body connections to achieve soft breakdown. In some embodiments, a field-effect transistor (FET) can include an assembly of source, gate, and drain implemented on an active region, a first body contact implemented at a first end of the assembly, and a second body contact implemented at a second end of the assembly. The second end can be distal from the first end along a width of the field-effect transistor.

Abstract: A signal switch includes a first transistor coupled between first and second nodes, a plurality of second transistors coupled in series between the first and second nodes and in parallel with the first transistor, and a first shunt path including a first shunt transistor and a first inductor connected in series between a reference node and a first connection point between two of the plurality of second transistors.

Abstract: Radio-frequency core circuitry includes a first switch arm associated with a first signal band and coupled to a common node, a second switch arm associated with a second signal band and coupled to the common node, a first shunt arm connected to a first shunt node in the first switch arm, and a first transmission line disposed in the first switch arm between the common node and the shunt node and having a length configured present an open circuit at a fundamental frequency associated with the second signal band and to present a short circuit at a harmonic of the fundamental frequency associated with the second signal band.

Abstract: An example of a signal switch includes a first transistor coupled between first and second nodes, a plurality of second transistors coupled in series between the first and second nodes, in parallel with the first transistor, a third transistor coupled between the first node and a third node, and a plurality of fourth transistors coupled in series between the first and third nodes, in parallel with the third transistor. The signal switch further includes a first shunt path including a first shunt transistor and a first inductor connected in series between a reference node and a first connection point between two of the plurality of second transistors, and a second shunt path including a second shunt transistor and a second inductor connected in series between the reference node and a second connection point between two of the plurality of fourth transistors.

Abstract: A coupling methodology and circuit arrangements to provide multi-frequency simultaneous power measurement. In one example, a wireless device front-end apparatus includes a plurality of antenna swap switches each connected to first and second antenna contacts, and a plurality of electromagnetic couplers each having an input port to receive a input signal of a unique frequency, a coupled port that provides a coupled signal based on the input signal, an output port connected to one of the plurality of antenna swap switches, and an isolation port. The apparatus further includes a termination network including a plurality of termination loads, and an output switch network configured to selectively connect the coupled port of each electromagnetic coupler to a coupler output bank to provide the coupled signals at the coupler output bank, and to selectively connect the isolation port of each electromagnetic coupler to one of the plurality of termination loads.