Patents by Inventor NXP B. V.

NXP B. V. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140125235
    Abstract: A circuit is disclosed for driving a plurality of LED strings from an AC supply and arranged to, in use, drive current through a series arrangement of a plurality N of the LED strings when the AC voltage is sufficient to drive the plurality N of the LED strings: the circuit comprising a first current source configured to be switchably connected to a one end of said series arrangement of N LED strings; a series combination of a second current source and a heat dissipater, wherein the series combination of the second current source and the heat dissipater is arranged in parallel with the first current source; and a current balancer for balancing the current through the first current source and the second current source. A driver for such a circuit is also disclosed.
    Type: Application
    Filed: March 21, 2013
    Publication date: May 8, 2014
    Applicant: NXP B. V.
    Inventor: NXP B. V.
  • Publication number: 20130214274
    Abstract: Disclosed is an integrated circuit comprising a substrate (10) including semiconductor devices and a metallization stack (20) over said substrate for interconnecting said devices, the metallization stack comprising a cavity (36), and a thermal conductivity sensor comprising at least one conductive portion (16, 18) of said metallization stack suspended in said cavity. A method of manufacturing such an IC is also disclosed.
    Type: Application
    Filed: January 28, 2013
    Publication date: August 22, 2013
    Applicant: NXP B. V.
    Inventor: NXP B. V.
  • Publication number: 20130193417
    Abstract: Disclosed is an integrated circuit comprising a substrate including at least one light sensor; an interconnect structure over the substrate; at least one passivation layer over the interconnect structure, said passivation layer including a first area over the at least one light sensor; and a gas sensor such as a moisture sensor at least partially on a further area of the at least one passivation layer, wherein the gas sensor comprises a gas sensitive layer in between a first electrode and a second electrode, the gas sensitive layer further comprising a portion over the first area. A method of manufacturing such an IC is also disclosed.
    Type: Application
    Filed: January 21, 2013
    Publication date: August 1, 2013
    Applicant: NXP B. V.
    Inventor: NXP B. V.
  • Publication number: 20130187713
    Abstract: A power amplifier circuit uses an output transistor and a cascode transistor. First and second drive circuits apply gate control signals to the two transistors, which rise and fall in synchronism, and this is such that the voltage drop across the cascode transistor is reduced (compared to a constant gate voltage being applied to the output transistor).
    Type: Application
    Filed: January 16, 2013
    Publication date: July 25, 2013
    Applicant: NXP B. V.
    Inventor: NXP B. V.
  • Publication number: 20130181336
    Abstract: A semiconductor package, comprises an encapsulant which contains a semiconductor substrate, the package lower side being mountable on a surface. The semiconductor substrate backside is in close proximity of the semiconductor package lower side for improved thermal conductivity to the surface. The active side of the semiconductor substrate, facing the upper side of the semiconductor package, has a plurality of die contacts. A plurality of electrically conductive interconnects are connected to the die contacts and extend to the lower side of the semiconductor package for connecting the die contacts to the surface.
    Type: Application
    Filed: December 18, 2012
    Publication date: July 18, 2013
    Applicant: NXP B. V.
    Inventor: NXP B. V.
  • Publication number: 20130156642
    Abstract: A optical detection system for used as a bio sensor is disclosed, comprising a card or cartridge and a reader. The cartridge comprises at least a detection chamber and an optical detector, and the reader includes means to urge a fluid into the detection chamber to initiate the analysis. The optical coupling may be enhanced by including optical elements in the card; conversely the system may be simplified by reducing or eliminating the number of moving parts in the card. In embodiments, additional elements such as a light source which may be an LED, flow restrictors or mixers, and electronic elements such as NFC functionality, may be included on the card. The card may be compatible with smart-cards.
    Type: Application
    Filed: November 21, 2012
    Publication date: June 20, 2013
    Applicant: NXP B. V.
    Inventor: NXP B. V.
  • Publication number: 20130157414
    Abstract: Consistent with an example embodiment, there is a semiconductor device comprised of a combination of device die. The semiconductor device comprises a package substrate having groups of pad landings. A first device die is anchored to the package substrate, the first device die having been wire-bonded to a first group of pad landings. At least one subsequent device die is anchored to the first device die. The at least one subsequent device die has an underside profile with recesses defined therein, the recesses of a size are defined to accommodate wires bonded to the first device die; the at least one subsequent device is wire bonded to a second group of pad landings.
    Type: Application
    Filed: September 26, 2012
    Publication date: June 20, 2013
    Applicant: NXP B. V.
    Inventor: NXP B. V.
  • Publication number: 20130153968
    Abstract: A semiconductor device and a method of making the same. The device includes a semiconductor substrate having an AlGaN layer on a GaN layer. The device also includes first contact and a second contact. The average thickness of the AlGaN layer varies between the first contact and the second contact, for modulating the density of an electron gas in the GaN layer between the first contact and the second contact.
    Type: Application
    Filed: November 14, 2012
    Publication date: June 20, 2013
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., NXP B. V.
    Inventors: NXP B. V., Taiwan Semiconductor Manufacturing Company lt
  • Publication number: 20130077354
    Abstract: A controller (210) for a switched mode power supply (100), the switched mode power supply (100) comprising one or more windings (104, 108, 108). The controller (210) comprising a fixed speed timer (236); a threshold setter configured to a set a threshold for the timer (236) in accordance with a peak value of a current (304) through one of the one or more windings (106); a secondary stroke detector (252) configured to start the fixed speed timer (236) upon detection of the start of a secondary stroke of the switched mode power supply; a sampler (232, 234) configured to sample a voltage across one of the one or more windings (108) when a count of the fixed speed timer (236) reaches the threshold.
    Type: Application
    Filed: September 24, 2012
    Publication date: March 28, 2013
    Applicant: NXP B. V.
    Inventor: NXP B. V.