Abstract: A method for depositing a metal-containing layer includes a deposition cycle having a step of contacting a surface of a substrate with a vapor of a metal-containing compound for a first predetermined pulse time to form a modified surface. The metal-containing compound is described by formula 1.2: M(x)LmGn ??(1.1), wherein: M is a metal; M(x) is a metal in an oxidation state x that disproportionates at a temperature above 30° C.; x is the oxidation state: L is an anionic ligand; G is a neutral ligand; m is an integer (e.g., 1, 2, 3, 4 or 5) such that m is chosen to maintain charge neutrality of the compound having formula 1; and n is 0, 1, 2, 3, 4, 5, or 6. The modified surface is contacted with a vapor of a first co-reactant (e.g., an activating compound) to form a metal-containing layer on the substrate.

Abstract: Methods of bonding and structures with such bonding are disclosed. One such method includes providing a first substrate with a first electrical contact; providing a second substrate with a second electrical contact above the first electrical contact, wherein an upper surface of the first electrical contact is spaced apart from a lower surface of the second electrical contact by a gap; and depositing a layer of selective metal on the lower surface of the second electrical contact and on the upper surface of the first electrical contact by a thermal Atomic Layer Deposition (ALD) process until the gap is filled to create a bond between the first electrical contact and the second electrical contact.

Abstract: A method for depositing a metal layer includes a step of contacting a surface of an electrically conductive substrate with a vapor of a metal-containing compound for a first predetermined pulse time to form a modified surface on the electrically conductive substrate. The metal-containing compound is a metal diketonate or a structurally similar compound. The modified surface is contacted with a vapor of a reducing agent that is a hydrazine or a hydrazine derivative for a second predetermined pulse time to form a metal-containing film on the surface of the electrically conductive substrate. Characteristically, the metal-containing film includes the metal atom in a zero oxidation state in an amount greater than 80 mole percent.