Patents by Inventor Nyles Cody
Nyles Cody has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9721790Abstract: A method for processing a semiconductor wafer in a single wafer processing chamber may include heating the single wafer processing chamber to a temperature in a range of 650-700° C., and forming at least one superlattice on the semiconductor wafer within the heated single wafer processing chamber by depositing silicon and oxygen to form a plurality of stacked groups of layers. Each group of layers may include a plurality of stacked base silicon monolayers defining a base silicon portion and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions. Depositing the oxygen may include depositing the oxygen using an N2O gas flow.Type: GrantFiled: June 1, 2016Date of Patent: August 1, 2017Assignee: ATOMERA INCORPORATEDInventors: Robert J. Mears, Nyles Cody, Robert John Stephenson
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Patent number: 9558939Abstract: A method for making a semiconductor device may include forming a plurality of spaced apart structures on a semiconductor substrate within a semiconductor processing chamber, with each structure including a plurality of stacked groups of layers. Each group of layers may include a plurality of stacked base silicon monolayers defining a base semiconductor portion and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions. Furthermore, the oxygen monolayers may be formed using N2O as an oxygen source.Type: GrantFiled: January 15, 2016Date of Patent: January 31, 2017Assignee: ATOMERA INCORPORATEDInventors: Robert Stephenson, Nyles Cody
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Publication number: 20160358773Abstract: A method for processing a semiconductor wafer in a single wafer processing chamber may include heating the single wafer processing chamber to a temperature in a range of 650-700° C., and forming at least one superlattice on the semiconductor wafer within the heated single wafer processing chamber by depositing silicon and oxygen to form a plurality of stacked groups of layers. Each group of layers may include a plurality of stacked base silicon monolayers defining a base silicon portion and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions. Depositing the oxygen may include depositing the oxygen using an N2O gas flow.Type: ApplicationFiled: June 1, 2016Publication date: December 8, 2016Inventors: Robert J. Mears, Nyles Cody, Robert John Stephenson
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Patent number: 7816236Abstract: Chemical vapor deposition methods use trisilane and a halogen-containing etchant source (such as chlorine) to selectively deposit Si-containing films over selected regions of mixed substrates. Dopant sources may be intermixed with the trisilane and the etchant source to selectively deposit doped Si-containing films. The selective deposition methods are useful in a variety of applications, such as semiconductor manufacturing.Type: GrantFiled: January 30, 2006Date of Patent: October 19, 2010Assignee: ASM America Inc.Inventors: Matthias Bauer, Chantal Arena, Ronald Bertram, Pierre Tomasini, Nyles Cody, Paul Brabant, Joseph Italiano, Paul Jacobson, Keith Doran Weeks
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Patent number: 7772097Abstract: An embodiment provides a method for selectively depositing a single crystalline film. The method includes providing a substrate, which includes a first surface having a first surface morphology and a second surface having a second surface morphology different from the first surface morphology. A silicon precursor and BCl3 are intermixed to thereby form a feed gas. The feed gas is introduced to the substrate under chemical vapor deposition conditions. A Si-containing layer is selectively deposited onto the first surface without depositing on the second surface by introducing the feed gas.Type: GrantFiled: November 5, 2007Date of Patent: August 10, 2010Assignee: ASM America, Inc.Inventors: Pierre Tomasini, Nyles Cody
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Patent number: 7666799Abstract: A relaxed silicon germanium structure comprises a silicon buffer layer produced using a chemical vapor deposition process with an operational pressure greater than approximately 1 torr. The relaxed silicon germanium structure further comprises a silicon germanium layer deposited over the silicon buffer layer. The silicon germanium layer has less than about 107 threading dislocations per square centimeter. By depositing the silicon buffer layer at a reduced deposition rate, the overlying silicon germanium layer can be provided with a “crosshatch free” surface.Type: GrantFiled: April 6, 2009Date of Patent: February 23, 2010Assignee: ASM America, Inc.Inventors: Chantal Arena, Pierre Tomasini, Nyles Cody, Matthias Bauer
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Patent number: 7648690Abstract: Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 atomic % or greater substitutional carbon. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.Type: GrantFiled: October 2, 2008Date of Patent: January 19, 2010Assignee: ASM America Inc.Inventors: Matthias Bauer, Keith Doran Weeks, Pierre Tomasini, Nyles Cody
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Publication number: 20090189185Abstract: A relaxed silicon germanium structure comprises a silicon buffer layer produced using a chemical vapor deposition process with an operational pressure greater than approximately 1 torr. The relaxed silicon germanium structure further comprises a silicon germanium layer deposited over the silicon buffer layer. The silicon germanium layer has less than about 10 threading dislocations per square centimeter. By depositing the silicon buffer layer at a reduced deposition rate, the overlying silicon germanium layer can be provided with a “crosshatch free” surface.Type: ApplicationFiled: April 6, 2009Publication date: July 30, 2009Applicant: ASM AMERICA, INC.Inventors: Chantal ARENA, Pierre TOMASINI, Nyles CODY, Matthias BAUER
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Publication number: 20090117717Abstract: An embodiment provides a method for selectively depositing a single crystalline film. The method includes providing a substrate, which includes a first surface having a first surface morphology and a second surface having a second surface morphology different from the first surface morphology. A silicon precursor and BCl3 are intermixed to thereby form a feed gas. The feed gas is introduced to the substrate under chemical vapor deposition conditions. A Si-containing layer is selectively deposited onto the first surface without depositing on the second surface by introducing the feed gas.Type: ApplicationFiled: November 5, 2007Publication date: May 7, 2009Applicant: ASM America, Inc.Inventors: Pierre Tomasini, Nyles Cody
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Patent number: 7514372Abstract: A relaxed silicon germanium structure comprises a silicon buffer layer produced using a chemical vapor deposition process with an operational pressure greater than approximately 1 torr. The relaxed silicon germanium structure further comprises a silicon germanium layer deposited over the silicon buffer layer. The silicon germanium layer has less than about 107 threading dislocations per square centimeter. By depositing the silicon buffer layer at a reduced deposition rate, the overlying silicon germanium layer can be provided with a “crosshatch free” surface.Type: GrantFiled: July 23, 2004Date of Patent: April 7, 2009Assignee: ASM America, Inc.Inventors: Chantal Arena, Pierre Tomasini, Nyles Cody, Matthias Bauer
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Publication number: 20090026496Abstract: Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 atomic % or greater substitutional carbon. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.Type: ApplicationFiled: October 2, 2008Publication date: January 29, 2009Applicant: ASM America, Inc.Inventors: Matthias Bauer, Keith Doran Weeks, Pierre Tomasini, Nyles Cody
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Patent number: 7438760Abstract: Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 atomic % or greater substitutional carbon. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.Type: GrantFiled: January 30, 2006Date of Patent: October 21, 2008Assignee: ASM America, Inc.Inventors: Matthias Bauer, Keith Doran Weeks, Pierre Tomasini, Nyles Cody
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Patent number: 7427556Abstract: A method for blanket depositing a SiGe film comprises intermixing a silicon source, a germanium source and an etchant to form a gaseous precursor mixture. The method further comprises flowing the gaseous precursor mixture over a substrate under chemical vapor deposition conditions to deposit a blanket layer of epitaxial SiGe onto the substrate, whether patterned or un-patterned.Type: GrantFiled: March 12, 2004Date of Patent: September 23, 2008Assignee: ASM America, Inc.Inventors: Pierre Tomasini, Nyles Cody, Chantal Arena
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Publication number: 20080026149Abstract: Chloropolysilanes are utilized in methods and systems for selectively depositing thin films useful for the fabrication of various devices such as microelectronic and/or microelectromechanical systems (MEMS).Type: ApplicationFiled: May 24, 2007Publication date: January 31, 2008Applicant: ASM America, Inc.Inventors: Pierre Tomasini, Chantal Arena, Matthias Bauer, Nyles Cody, Ronald Bertram, Jianqing Wen, Matthew Stephens
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Publication number: 20070264801Abstract: Pile ups of threading dislocations in thick graded buffer layer are reduced by enhancing dislocation gliding. During formation of a graded SiGe buffer layer, deposition of SiGe from a silicon precursor and a germanium precursor is interrupted one or more times with periods in which the flow of the silicon precursor to the substrate is stopped while the flow of the germanium precursor to the substrate is maintained.Type: ApplicationFiled: May 9, 2006Publication date: November 15, 2007Inventors: Nyles Cody, Chantal Arena, Pierre Tomasini, Carlos Mazure
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Publication number: 20070155138Abstract: A new model is provided for the CVD growth of silicon germanium from silicon-containing and germanium-containing precursors. According to the new model, the germanium concentration x is related to the gas phase ratio according to the equation [x/(1?x)]2=mPGe/PSi, and m=Ae?E/(RT), where PSi is the partial pressure of the silicon-containing precursor, PGe is the partial pressure of the germanium-containing precursor, A is a constant, R is the universal gas constant, and T is the temperature. Methods and apparatuses are described for controlling CVD process parameters, associated with a series of reactions at constant or varied temperature, to achieve targeted germanium concentrations in silicon germanium films deposited onto semiconductor substrates. In particular, the new model can be used to calculate the resultant germanium concentration for selected precursor flow rates. The new model can also be used to control a precursor injection apparatus to achieve a desired germanium concentration.Type: ApplicationFiled: May 23, 2006Publication date: July 5, 2007Inventors: Pierre Tomasini, Matthias Bauer, Nyles Cody
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Publication number: 20060240630Abstract: Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 atomic % or greater substitutional carbon. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.Type: ApplicationFiled: January 30, 2006Publication date: October 26, 2006Inventors: Matthias Bauer, Keith Weeks, Pierre Tomasini, Nyles Cody
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Publication number: 20060234504Abstract: Chemical vapor deposition methods use trisilane and a halogen-containing etchant source (such as chlorine) to selectively deposit Si-containing films over selected regions of mixed substrates. Dopant sources may be intermixed with the trisilane and the etchant source to selectively deposit doped Si-containing films. The selective deposition methods are useful in a variety of applications, such as semiconductor manufacturing.Type: ApplicationFiled: January 30, 2006Publication date: October 19, 2006Inventors: Matthias Bauer, Chantal Arena, Ronald Bertram, Pierre Tomasini, Nyles Cody, Paul Brabant, Joseph Italiano, Paul Jacobson, Keith Weeks
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Publication number: 20050051795Abstract: A relaxed silicon germanium structure comprises a silicon buffer layer produced using a chemical vapor deposition process with an operational pressure greater than approximately 1 torr. The relaxed silicon germanium structure further comprises a silicon germanium layer deposited over the silicon buffer layer. The silicon germanium layer has less than about 107 threading dislocations per square centimeter. By depositing the silicon buffer layer at a reduced deposition rate, the overlying silicon germanium layer can be provided with a “crosshatch free” surface.Type: ApplicationFiled: July 23, 2004Publication date: March 10, 2005Inventors: Chantal Arena, Pierre Tomasini, Nyles Cody, Matthias Bauer
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Publication number: 20040259333Abstract: A method for blanket depositing a SiGe film comprises intermixing a silicon source, a germanium source and an etchant to form a gaseous precursor mixture. The method further comprises flowing the gaseous precursor mixture over a substrate under chemical vapor deposition conditions to deposit a blanket layer of epitaxial SiGe onto the substrate, whether patterned or un-patterned.Type: ApplicationFiled: March 12, 2004Publication date: December 23, 2004Inventors: Pierre Tomasini, Nyles Cody, Chantal Arena