Abstract: The invention relates to an semi-conductor device comprising a first surface and neighboring first and second electric elements arranged on the first surface, in which each of the first and second elements extends from the first surface in a first direction, the first element having a cross section substantially perpendicular to the first direction and a sidewall surface extending at least partially in the first direction, wherein the sidewall surface comprises a first section and a second section adjoining the first section along a line extending substantially parallel to the first direction, wherein the first and second sections are placed at an angle with respect to each other for providing an inner corner wherein the sidewall surface at the inner corner is, at least partially, arranged at a constant distance R from a facing part of the second element for providing a mechanical reinforcement structure at the inner corner.

Abstract: The invention relates to a tamper-resistant semiconductor device comprising a substrate (5) comprising an electronic circuit arranged on a first side thereof. An electrically-conductive protection layer (50, 50a, 50b) is arranged on a second side of the substrate (5) opposite to the first side. At least three through-substrate electrically-conductive connections (45) extend from the first side of the substrate (5) into the substrate (5) and in electrical contact with the electrically-conductive protection layer (50, 50a, 50b) on the second side of the substrate (5). A security circuit is arranged on the first side connected to the through-substrate electrically-conductive connections (45) and is arranged for measuring at least two resistance values (R12, R23, R34, R14, R13, R24) of the electrically-conductive protection layer (50, 50a, 50b) through the through-substrate electrically-conductive connections (45).

Abstract: An energy storage device (300), the device (300) comprising a substrate (102), a steric structure (104) formed on and/or in a main surface (106) of the substrate (102), a current collector stack (202) formed on the steric structure (104), and an electric storage stack (302) formed on the current collector stack (202), wherein side walls (108) of the steric structure (104) and the main surface (106) of the substrate (102) enclose an acute angle of more than 80 degrees.

Abstract: The invention relates to an semi-conductor device comprising a first surface and neighboring first and second electric elements arranged on the first surface, in which each of the first and second elements extends from the first surface in a first direction, the first element having a cross section substantially perpendicular to the first direction and a sidewall surface extending at least partially in the first direction, wherein the sidewall surface comprises a first section and a second section adjoining the first section along a line extending substantially parallel to the first direction, wherein the first and second sections are placed at an angle with respect to each other for providing an inner corner wherein the sidewall surface at the inner corner is, at least partially, arranged at a constant distance R from a facing part of the second element for providing a mechanical reinforcement structure at the inner corner.

Abstract: The present invention relates to a method of manufacturing a solid-state battery with a high flexibility. The method comprises the steps of: forming an arrangement of battery cells (2) on a first substrate layer and providing a barrier layer (5) between the battery cells and the first substrate layer, applying on the arrangement of battery cells on the side not covered by the first substrate layer a second substrate layer (13), and removing the first substrate layer completely from the barrier layer, applying on the barrier layer a third substrate layer (14). The present invention further refers to the solid-state battery manufactured according to the method, as well as to a device, including the solid-state battery.

Abstract: The present invention relates to particles comprising a core and a shell, a method of producing said particle, various uses of said particle as well as various products comprising said particle. The particle according to the invention may be used as photocatalyst, as antibacterial agent, as cleaning agent, as anti-fogging agent and as decomposing agent. Furthermore the particle is applicable as solar cells.

Abstract: The invention relates to a tamper-resistant semiconductor device comprising a substrate (5) comprising an electronic circuit arranged on a first side thereof. An electrically-conductive protection layer (50, 50a, 50b) is arranged on a second side of the substrate (5) opposite to the first side. At least three through-substrate electrically-conductive connections (45) extend from the first side of the substrate (5) into the substrate (5) and in electrical contact with the electrically-conductive protection layer (50, 50a, 50b) on the second side of the substrate (5). A security circuit is arranged on the first side connected to the through-substrate electrically-conductive connections (45) and is arranged for measuring at least two resistance values (R12, R23, R34, R14, R13, R24) of the electrically-conductive protection layer (50, 50a, 50b) through the through-substrate electrically-conductive connections (45).

Abstract: An electro-optical suspended particle cell comprises a liquid acting as a suspending medium. First particles (3) and second particles (4), which are anisometrically shaped, are dispersed in the liquid and have different optical properties. A driver is coupled between electrodes for generating an electrical field in the cell. The first particles (3) and the second particles (4) have at least one further different property to obtain different amounts of rotation of the first particles (3) and the second particles (4) as a function of a strength of the electrical field, or as a function of a duration the electrical field (E) is applied.

Abstract: A switchable transflector (1) comprises a suspended particle device (SPD). The transflector (1) may be switched into transmissive, reflective or intermediate states by applying one or more electric fields to a particle suspension (2). An enhanced reflectivity state may be achieved by applying two mutually orthogonal electric fields simultaneously. An intermediate state may be achieved by applying a non-saturating electric field or by applying two or more electric fields alternately according to a timing scheme. The transflector (1) may be maintained in a given state by applying voltage pulses at intervals less than a relaxation time associated with the SPD 1. The transmittance and reflectance properties of the transflector (1) may be tuned in accordance with the output of a light sensor (14). The transflector (1) may be incorporated in a transflective display (15)which comprises a display device, such as an LCD (16).

Abstract: A suspended particle device (SPD) 4 comprises at least one compartment for housing a particle suspension 1Oa, 1Ob, means for applying a first electric field to the particle suspension IOa, 1 Ob and means for applying a second electric field to the particle suspension 10a, 10b, the first and second electric fields having different field directions. A plurality of pixels are defined by a plurality of compartments, each housing a separate particle suspension 10a, 10b and/or regions of a particle suspension 10 within a compartment in which means for applying an inhomogeneous second electric field are provided (FIG. 11). Each pixel may be tuned to a transmissive state, a reflective state or an intermediate state or “grey value”, so that the SPD 4 may be used to display imaging or text. The SPD 4 may be reset by bringing the pixels into the same state by applying an appropriate electric field to one or more pixels.

Abstract: The invention relates to an electro-optical cell (1) comprising a first (2) and a second (3) support member, an electro-optical medium (5) between the support members and an electrode arrangement (11, 12) on the support members such that an electric field can be applied, in the electro-optical medium, perpendicular to the support members, aligned with the support members or at an oblique angle (7) with respect to the support members. The electro-optical cell further comprises layers (14) of material with different dielectric constant between the support members in order to reduce the inhomogeneity of the electric field lines in the electro-optical medium. By having a layer of cholesteric liquid crystals between the support members, the electro-optical cell will function as a colour filter for varying applied fields.

Abstract: A display (1) comprises a display device (2), such as an LC cell and a switchable transflector (7). The transflector 7 comprises a plurality of discrete portions and is configured so that the transmittance and reflectance properties of at least one of said portions can be tuned independently of other portions. Where the transflector is a suspended particle device (SPD), the portions may comprise individual particle suspensions (8a, 8b, 8c) and/or regions within a cell containing a particle suspension (8a, 8b, 8c). In normal operation, images etc. are displayed using the display device (2). In some embodiments, the transflector (7) may be used in the provision of illumination for the display device (2) using backlighting 9 from light source (3) and/or reflected ambient light (10), in dependence on the light level detected by a light sensor (22).

Abstract: The semiconductor device has a security coating with embedded magnetic particles and magnetoresistive sensors. This renders possible a measurement of the impedance of security elements defined by magnetoresistive sensors and security coating. If initial values of the impedance are stored, actual values can be compared therewith to see if the device has not been electrically probed or modified. Such a comparison can be used to check the authenticity of the device.

Abstract: The semiconductor device has a security coating with embedded magnetic particles and magnetoresistive sensors. This renders possible a measurement of the impedance of security elements defined by magnetoresistive sensors and security coating. If initial values of the impedance arc stored, actual values can be compared therewith to see if the device has not been electrically probed or modified. Such a comparison can be used to check the authenticity of the device.