Abstract: Provided is an automatic rotating interdental brush that automatically rotates a brush to efficiently clear away extraneous substances, plaque and the like trapped in between teeth by pushing and pulling a grip body while causing the brush to be in contact with the teeth. The automatic rotating interdental brush includes a body, a rotor that protrudes from and retracts into the body to rotate a brush, a brush coupled to the rotor, and a rotating unit for causing the rotor to protrude and retract while being rotated. The rotating unit includes a screw provided at a rear end of the rotor and having a spiral rotation guide groove longitudinally formed thereon, and a rotating guide hole formed in the body and having a shape corresponding to a cross-section of the screw so as to cause the screw disposed therein to be linearly moved while being rotated.

Abstract: Disclosed herein is an automatic rotating interdental brush that automatically rotates a brush to efficiently clear away extraneous substances, plaque and the like trapped in between teeth by pushing and pulling a grip body while causing the brush to be in contact with the teeth. The automatic rotating interdental brush includes a body, a rotor that protrudes from and retracts into the body to rotate a brush, a brush coupled to the rotor, and a rotating unit for causing the rotor to protrude and retract while being rotated. The rotating unit includes a screw provided at a rear end of the rotor and having a spiral rotation guide groove longitudinally formed thereon, and a rotating guide hole formed in the body and having a shape corresponding to a cross-section of the screw so as to cause the screw disposed therein to be linearly moved while being rotated.

Abstract: A photonic quantum ring (PQR) laser includes an active layer having a multi-quantum-well (MQW) structure and etched lateral face. The active layer is formed to be sandwiched between p-GaN and n-GaN layers epitaxially grown on a reflector disposed over a support substrate. A coating layer is formed over an outside of the lateral faces of the active layer, and upper electrode is electrically connected to an upper portion of the n-GaN layer, and a distributed Bragg reflector (DBR) is formed over the n-GaN layer and the upper electrode. Accordingly, the PQR laser is capable of oscillating a power-saving vertically dominant 3D multi-mode laser suitable for a low power display device, prevent the light speckle phenomenon, and generate focus-adjusted 3D soft light.

Abstract: A photonic quantum ring (PQR) laser includes an active layer having a multi-quantum-well (MQW) structure and etched lateral face. The active layer is formed to be sandwiched between p-GaN and n-GaN layers epitaxially grown on a reflector disposed over a support substrate. A coating layer is formed over an outside of the lateral faces of the active alyer, and upper electrode is electrically connected to an upper portion of the n-GaN layer, and a distributed Bragg reflector (DBR) is formed over the n-GaN layer and the upper electrode. Accordingly, the PQR laser is capable of oscillating a power-saving vertically dominant 3D multi-mode laser suitable for a low power display device, prevent the light speckle phenomenon, and generate focus-adjusted 3D soft light.

Abstract: Provided are a semiconductor laser diode, and a printhead and an image forming apparatus including the semiconductor laser diode. The semiconductor laser diode includes a concave-convex pattern, and emits light having a Gaussian light intensity distribution. High quality images are provided by applying the semiconductor laser diode to a printhead and an image forming apparatus.

Abstract: A photonic quantum ring (PQR) laser includes an active layer having a multi-quantum-well (MQW) structure and etched lateral face. The active layer is formed to be sandwitched between p-GaN and n-GaN layers epitaxially grown on a reflector disposed over a support substrate. A coating layer is formed over an outside of the lateral faces of the active layer, an upper electrode is electrically connected to an upper portion of the n-GaN layer, and a distributed Bragg reflector (DBR) is formed over the n-GaN layer and the upper electrode. Accordingly, the PQR laser is capable of oscillating a power-saving vertically dominant 3D multi-mode laser suitable for a low power display device, prevent the light speckle phenomenon, and generate focus-adjusted 3D soft light.

Abstract: An optical coupling structure includes a PQR hole emitter having a PQR hole, and an optical fiber whose one side is tapered into the PQR hole. An index-matching solution such as a photo-resist or a photo-resist diluted solution is injected into the PQR hole to adhere the optical fiber and the PQR hole.

Abstract: An optical coupling structure includes a PQR hole emitter having a PQR hole, and an optical fiber whose one side is tapered into the PQR hole. An index-matching solution such as a photo-resist or a photo-resist diluted solution is injected into the PQR hole to adhere the optical fiber and the PQR hole.

Abstract: A light-emitting device is capable of oscillating in a convex-whispering gallery mode. The lighting-emitting device includes a PIN-type semiconductor including a p-type distributed Bragg reflector, an active region and an n-type distributed Bragg reflector formed on a substrate by an epitaxial growth, wherein the PIN-type semiconductor having a hole with a predetermined diameter formed thereon, and an electrode connected to a region around the hole for applying a current to the hole. Further disclosed are a method for manufacturing the light-emitting device and an array of light-emitting devices.

Abstract: A light-emitting device is capable of oscillating in a convex-whispering gallery mode. The lighting-emitting device includes a PIN-type semiconductor including a p-type distributed Bragg reflector, an active region and an n-type distributed Bragg reflector formed on a substrate by an epitaxial growth, wherein the PIN-type semiconductor having a hole with a predetermined diameter formed thereon, and an electrode connected to a region around the hole for applying a current to the hole. Further disclosed are a method for manufacturing the light-emitting device and an array of light-emitting devices.

Abstract: A three-dimensional (3D) photonic quantum ring (PQR) laser for a low power consumption display, wherein the PQR laser has a sufficient small radius to adjust an inter-mode spacing (IMS) of oscillation modes discretely multi-wavelength-oscillating in an envelope wavelength range within the gain profile of a given semiconductor material of the PQR laser so that the IMS has a maximal value and the number of the oscillation modes is minimized. The PQR laser exhibits multi-wavelength oscillation characteristics according to a 3D toroidal cavity structure, and is designed to exhibit a threshold current lower than those of LEDs and to have multi-wavelength modes in an envelope wavelength range of several nm to several tens of nm. The PQR laser consumes reduced power while maintaining desired color and high brightness equal to those of the LEDs, through an adjustment of the multi-wavelength oscillation characteristics and IMS of the PQR laser.

Abstract: The present invention relates to a method of mass fabricating a hyperboloid-drum element which is uniform in size and with the diameter of an active layer (active region or gain medium) ranging from tens of nm to less than a few ?m, and to an element fabricated thereby. According to the present invention, the fabrication method of the hyperboloid-drum element comprises forming an epitaxial layer which includes an n-type semiconductor joined with a p-type semiconductor on a substrate and an active region near a border region and a boundary between the n-type semiconductor and the p-type semiconductor; and etching the epitaxial layer into a shape of the hyperboloid-drum having the minimum diameter at the active region by an ion-beam etching method. The hyperboloid-drum element fabricated in accordance with the present invention has advantages of uniformity in size and good reproducibility.

Abstract: A sensor prevents automobile crashes by collecting information such as a distance between automobiles, speed, and acceleration by utilizing a phenomenon that a photonic quantum ring laser emits light rays having different wavelengths associated with varying angles of the radiation from the photonic quantum ring. The sensor for preventing automobile crashes includes a photonic quantum ring laser array emitting lasing light beams having different wavelengths according to the view angle, a reflection unit for reflecting the light beams oscillated from the photonic quantum ring laser array, and a detection unit for detecting the light beams reflected by the reflection unit.

Abstract: A photonic quantum ring (PQR) laser diode with a plurality of laterally extending layers, one on top of another in an axial stack, comprises an active region sandwiched between an n type multi-layer distributed Bragg reflector (DBR) stack and a p type multi-layer DBR stack, wherein, along the circumference of said active region, 3 dimensional radiations are emitted with various wavelengths over a predetermined tuning range, as a function of slanted view angle with respect to the stack axis. The PQR laser shows an ultra-low threshold current of &mgr;A range, T½ dependence of the spectral peak shift and a square law behavior of threshold currents.

Abstract: A surface emitting laser diode comprises a circular grating defined on the top surface of the diode for emitting a laser therethrough, an active layer for generating the laser in the region thereof under the circular grating, a reflection layer for preventing the laser from emitting through the bottom surface of the diode and a first contact, which includes a plurality of electrodes, for providing the active layer with carriers of a first conduction type and a second contact for providing the active layer with carriers of a second conduction type.

Abstract: Disclosed herein is a novel process for the manufacture of optical bistable switching device including multiple quantum wells. The process is carried out by: supplying a first organo-metallic compound as the source of a first metallic element and a reaction gas continuously while supplying a second organo-metallic compound as the source of a second metallic element in a discrete mode into a reactor and cultivating a semiconductor multiple quantum wells region having multiple pairs of intrinsic semiconductor-layer/semiconductor-layer(GaAs/AlGaAs), one of the layer containing said second metallic element(Al), while controlling the mole fraction of said second metallic element(Al) to be in the range of 0.01 to 0.25 of the total first and second metal contents existing in the layer containing the second metallic element, thereby lowering the impurity concentration and optimizing the negative resistance.

Abstract: Composites of coercive particles and superparamagnetic particles comprise an intimate admixture of said particles in a dielectric matrix. The particles are admixed in such a fashion as to provide a composite which exhibits a coercivity which behaves as if the coercive particles and the superparamagnetic particles interact. Composites exhibiting such controlled coercivity are useful in the manufacture of transformers, magnets and magnetic tapes.