Abstract: Metal acid salt complexes are provided comprising (1) a first metal ion consisting essentially of bismuth, and optionally, at least one second metal ion selected from the group consisting of barium, calcium, strontium, lead, titanium, tantalum, and niobium, and (2) a polyether acid. The metal acid salt complexes are prepared by combining (1) bismuth ion, and optionally, at least one second metal ion and (2) at least one of a polyether acid and a polyether acid anhydride prepared from the polyether acid. In particular, the use of a mixture of bismuth, strontium, and niobium and/or tantalum salts of the hydrophilic acid 3,6-dioxaheptanoic acid salt is described for production of ceramic thin films, such as for use in ferroelectric devices, using non-toxic solvents. As a consequence, improved electronic devices are formed from less toxic and easier handled precursors and solvents.

Abstract: A hydrogen getter comprising a thin film having a layer of inert material, and a hydrogen reactive material disposed in or attached to the layer of inert material. The hydrogen reactive material may comprise palladium oxide powder, and the layer of inert material may comprise an epoxy resin. Various forms of the hydrogen reactive material may be used including porous composite, or a solid composite comprising a powder coated organic thin film, for example. An alternative gettering system that is operative in an oxygen environment uses a thin film of hydrogen reactive material that catalyzes the reaction of hydrogen and oxygen to form water. Improved sealed microelectronic packages are also disclosed along with methods of fabricating same.

Abstract: Novel metal acid salt complexes are provided comprising (1) a metal selected from Group IV and Group V metals and (2) a polyether acid, along with a process for making the salt complexes. The process comprises: (a) preparing a polyether acid anhydride from the corresponding polyether acid; and (b) combining a metal alkoxide containing the Group IV or Group V metal with the polyether acid anhydride to form the metal acid salt complex. The resulting Group IV and Group V metal acid salt complexes enable the production of improved thin film, thick film, and bulk ceramic metal oxides and mixed metal oxides for a number of applications, including ferroelectric, electrooptic, paraelectric, and piezoelectric devices, using liquid soluble precursors which are soluble in far less toxic solvents than in the prior art. The soluble ceramic precursors may also be used as reactive binders and shape-forming aids in conventional ceramic processing.

Abstract: A method of packaging hybrid wafers or die that are interconnected using soft metal bumps, such as indium, in a sealed ceramic package. The present invention passivates the hybrid die that are to be interconnected by way of the bumps, so that the metal in the bumps (indium) does not wet the surface of the hybrid die when the ceramic package is sealed at high temperature. Vias are formed in the passivated surfaces to expose underlying contact areas. Bumps are then formed on the contact areas, and the bumped and passivated hybrid die are electrically interconnected. The ceramic package containing the electrically interconnected hybrid die is processed at a temperature above the melting temperature of the bumps to attach a ceramic cover to the ceramic package. The method is performed at a temperature well in excess of the melting temperature of the bumps (.about.155.degree. Celsius for indium), typically on the order of 325.degree. Celsius.

Abstract: A memory includes a bitline data signal input (24), at least one memory unit (20), a writing circuit (128) which writes a polarization state into each memory unit (20) responsive to the bitline data signal input, and a sensing circuit (130) that senses a polarization state of each memory unit (20). Each memory unit (20) includes a ferroelectric capacitor (22) and a buffer amplifier (26) in electrical series relationship with the ferroelectric capacitor (22) and the bitline data signal input (24). The buffer amplifier (26) capacitively isolates the ferroelectric capacitor (22) from the bitline data signal input (24) so that the ferroelectric capacitor (22) may be made smaller in size than would otherwise be the case.

Abstract: A process is provided for preparing mixed metal oxide materials having improved leakage characteristics when formed into a capacitor. The process comprises: (a) preparing a solution of a liquid precursor of the mixed metal oxide materials having a given composition in a water-immiscible solvent; (b) adding a small amount of water to the solution to form a two-phase mixture; (c) refluxing the two-phase mixture for a period of time; and (d) removing the water. Optionally, an additional amount of the water-immiscible solvent may be added prior to removing the water. In this case, both the added amount of the water-immiscible solvent and the water are removed simultaneously. The treated metal organic acid salt solutions provide ceramic thin films having improved leakage characteristics as compared to the prior art thin films prepared from untreated prior art solutions.

Abstract: Oxide materials having a composition described by the formula SrBi.sub.2.00- Ta.sub.2.00-x Nb.sub.x O.sub.9, where x ranges from 0.00 to 2.00 and is controlled to within about 1%, are provided having improved high temperature performance. A batch of the desired composition is initially prepared by conventional processes to provide a nominal composition that may be close to the desired composition, but not the exact desired composition. A portion of the batch is processed to form a thin film, the stoichiometry of which is then analyzed. The batch composition is then modified by adding thereto a quantity of one or more of the constituents to bring the batch composition to the desired stoichiometry. Further improved high temperature performance is achieved with values of x within the range of about 0.10 to 1.9, and more preferably, about 0.4 to 0.7, and most preferably about 0.56.

Abstract: This invention teaches a method for fabricating an array (1) of pyroelectric detectors (10), and further teaches an array (1) of pyroelectric detectors (10) that include a bismuth layered compound. The array has a substrate (12) and a plurality of pyroelectric detector sites disposed over a surface of the substrate. Each of the pyroelectric detector sites is constructed to have a first electrode (16); a second electrode (20); and a thin layer (18) containing a bismuth layered compound that is interposed between and electrically coupled to the first and second electrodes. In one embodiment the thin layer is comprised of Y1 material (SrBi.sub.2 Ta.sub.2 O.sub.9), while in another embodiment the layer is comprised instead of YZ material (SrBi.sub.2 Nb.sub.2-x Ta.sub.x O.sub.9).

Abstract: A layer of sacrificial, chemically reactive material is formed as part of the fabrication process of an integrated circuit, and covers active circuitry to protect it from reaction with hydrogen. Integrated circuits and fabrication methods are provided by the present invention. The present invention is used to fabricate integrated circuits such as ferroelectric memories, and the like, using die or substrates containing one or more sacrificial layers of strontium bismuth niobate tantalate, for example. The sacrificial layers consume atmospheric hydrogen or other materials that otherwise would react with active circuitry of the integrated circuits and render them ineffective.

Abstract: A memory cell is constructed using a ferroelectric capacitor having an insulator formed of a ferroelectric material that has a zero field capacitance which is controllably dependent upon the electrical charging path by which the zero field capacitance is reached. Preferably, the material is characterized by a first zero field capacitance following saturation of the polarization by a first applied voltage applied in a first polarization direction, and a second zero field capacitance following saturation of the polarization by the first applied voltage applied in the first polarization direction followed by partial depolarization by a second voltage applied in a direction opposite to the first polarization direction. A second ferroelectric capacitor or a linear capacitor may be placed in parallel with the ferroelectric capacitor to form a two-capacitor memory cell. Data may be read to or from the capacitor cell without impairing the state of the stored data.

Abstract: Metal organic acid salt solutions for use as precursor materials for forming layered ferroelectric thin films are synthesized using an organic acid anhydride as the exchange reagent. The reaction is much faster than previous techniques, allows exact control of exchange with control of hydrolysis product, and may be used to control the solvent of the final solution. The reaction creates no water, and can be used to exactly control the extent of reaction of all metals. By using less than or equal to a stoichiometric amount of anhydride and then further reacting the remaining alkoxides, lower carbon content solutions with less decomposable organic can be formed. As such, the present invention discloses a much improved and faster synthesis technique giving improved solutions and corresponding thin film metal oxide compositions with improved and consistent electrical performance.

Abstract: A capacitor (20) is fabricated using a ferroelectric material (28) such as a layered perovskite material of the Aurivillius family. The capacitor (20) has a positive temperature coefficient (PTC) of capacitance. When used in an electrical device other than a memory device in place of a conventional capacitor, the PCT capacitor (20) provides inherent temperature compensation of the signal of the device when the device is operated at different temperatures below the Curie temperature of the ferroelectric material.

Abstract: A memory includes a first ferroelectric capacitor and a second ferroelectric capacitor electrically connected in a parallel arrangement, and writing circuitry that writes controllably different polarization states into the two ferroelectric capacitors using a single input signal. Read circuitry senses the difference in stored polarizations in the first ferroelectric capacitor and the second ferroelectric capacitor. This sensing circuit causes only a partial switching of the polarization state of the first ferroelectric capacitor and does not disturb the polarization state of the second ferroelectric capacitor. There is a restoration circuit to restore the original ferroelectric polarization of the ferroelectric capacitors following reading.

Abstract: The invention concerns an optical detection matrix (9) contained within a cryogenic chamber (3). Electrical image signals produced by the matrix (9) are converted into optical signals and transmitted out of the chamber (3) on lines 42A-42T. The optical signals on lines 42A-42T are converted into electrical signals carried on line 56.

Abstract: Fiber optic solderable bulkhead fitting has a plated-on built-up metal body of a material which minimizes local stresses thereby minimizing microbending losses in the optical fiber. The body is sealed by solder within an opening in a bulkhead to provide a sealed passthrough for the optical fiber. In another embodiment, two optical fibers have plated-on built-up bodies thereon which serve to align the optical fibers in a connector. The connector is then sealed in a bulkhead as was done in the first embodiment.

Abstract: An optical device, capable of being variously optimized so as to have the characteristics of a switch, modulator, and filter, is disclosed. The device is obtained by providing first and second optical channel waveguides generally parallel one another at a surface of an electro-optic substrate, the waveguides being optically coupled in first and third regions of the device and essentially optically separated in an interposed second region, first, second, and third electrode sets being associated with the waveguides in the first, second, and third regions, respectively, the first and third electrode sets being biased so as to each transfer light of a given frequency bandwidth between the first and second waveguides, the second electrode set being biased so as to provide a relative phase difference between light present in each of the waveguides within the second region.

Abstract: Optical fibers are clamped by a block onto a substrate. Thereupon, metal is plated over the fibers to hold them in place upon the substrate. The clamp block is removed and the opening, resulting from the clamp block's presence, is then plated in. The built-up metallic body is a coupling which holds the fibers in position so that the ends can be polished for coupling to an integrated optical chip upon a coupling fixture.