Abstract: A method of driving a crack detector of an organic light emitting display device according to example embodiments includes: determining an image load of a display panel with respect to image data corresponding to an emission period of the organic light emitting display device when it is driven according to a simultaneous emission driving method, calculating a first sensing value corresponding to a power current that flows into a power supply during the emission period, determining a first crack reference value based on the image load, and determining whether the display panel is cracked by comparing the first crack reference value with the first sensing value.

Abstract: A method of driving a crack detector of an organic light emitting display device according to example embodiments includes: determining an image load of a display panel with respect to image data corresponding to an emission period of the organic light emitting display device when it is driven according to a simultaneous emission driving method, calculating a first sensing value corresponding to a power current that flows into a power supply during the emission period, determining a first crack reference value based on the image load, and determining whether the display panel is cracked by comparing the first crack reference value with the first sensing value.

Abstract: Disclosed is a light-emitting device using a transistor structure, including a substrate, a first gate electrode, a first insulating layer, a source electrode, a drain electrode, and a light-emitting layer formed between the source electrode and the drain electrode in a direction parallel to these electrodes. In the light-emitting device using the transistor structure, it is possible to adjust the mobility of electrons or holes and to selectively set a light-emitting region through the control of the magnitude of voltage applied to the gate electrode, thus increasing the lifespan of the light-emitting device, facilitating the manufacturing process thereof, and realizing light-emitting or light-receiving properties having high efficiency and high purity.

Abstract: A method of fabricating a one-way transparent optical system by which external light is effectively intercepted and internal light passes nearly without loss is provided. The method includes: forming a silver halide on a transparent substrate; aligning a mask in which a predetermined pattern is formed, on the transparent substrate and exposing the silver halide using the mask; developing and fixing the exposed silver halide and forming a plurality of light-absorbing materials on the transparent substrate; and forming protrusion structures having a shape of a convex lens shape for refracting incident light toward a corresponding light-absorbing material of the light-absorbing materials, on the transparent substrate on which the light-absorbing materials are formed.

Abstract: Disclosed is a light-emitting device using a transistor structure, including a substrate, a first gate electrode, a first insulating layer, a source electrode, a drain electrode, and a light-emitting layer formed between the source electrode and the drain electrode in a direction parallel to these electrodes. In the light-emitting device using the transistor structure, it is possible to adjust the mobility of electrons or holes and to selectively set a light-emitting region through the control of the magnitude of voltage applied to the gate electrode, thus increasing the lifespan of the light-emitting device, facilitating the manufacturing process thereof, and realizing light-emitting or light-receiving properties having high efficiency and high purity.

Abstract: Provided is a method of fabricating a low temperature ZnO polycrystalline film and a thin film transistor (TFT) adopting the low temperature ZnO polycrystalline film. The method includes growing ZnO on a substrate at a first temperature for a first time using Metal Organic Chemical Vapor Deposition (MOCVD) to form a ZnO buffer layer, and heating the substrate at a temperature lower than the first temperature to grow ZnO on the ZnO buffer layer for a second time longer than the first time so as to form a ZnO film.

Abstract: A film bulk acoustic resonator (FBAR) includes a resistance layer deposited on the upper surface of a semiconductor substrate and having a recess therein, a membrane layer on the upper surfaces of the resistance layer and the recess, thereby forming an air gap between the membrane layer and the semiconductor substrate, and a resonator having a lower electrode, a piezoelectric layer, and an upper electrode deposited on the membrane layer. The resistance layer may include first and second resistance layers, the first resistance layer having the recess therein and the second resistance layer being deposited on the upper surfaces of the recess. Thus, the air gap is formed without etching the semiconductor substrate, enhancing the resonant characteristics of the FBAR. Active and/or passive devices can be formed underneath the air gap to be integrated with the FBAR.

Abstract: A method of fabricating a one-way transparent optical system by which external light is effectively intercepted and internal light passes nearly without loss is provided. The method includes: forming a silver halide on a transparent substrate; aligning a mask in which a predetermined pattern is formed, on the transparent substrate and exposing the silver halide using the mask; developing and fixing the exposed silver halide and forming a plurality of light-absorbing materials on the transparent substrate; and forming protrusion structures having a shape of a convex lens shape for refracting incident light toward a corresponding light-absorbing material of the light-absorbing materials, on the transparent substrate on which the light-absorbing materials are formed.

Abstract: A film bulk acoustic resonator (FBAR) includes a resistance layer deposited on the upper surface of a semiconductor substrate and having a recess therein, a membrane layer on the upper surfaces of the resistance layer and the recess, thereby forming an air gap between the membrane layer and the semiconductor substrate, and a resonator having a lower electrode, a piezoelectric layer, and an upper electrode deposited on the membrane layer. The resistance layer may include first and second resistance layers, the first resistance layer having the recess therein and the second resistance layer being deposited on the upper surfaces of the recess. Thus, the air gap is formed without etching the semiconductor substrate, enhancing the resonant characteristics of the FBAR. Active and/or passive devices can be formed underneath the air gap to be integrated with the FBAR.

Abstract: Provided is a DNA chip having a multi-layer structure of thin films. The DNA chip comprises: a substrate; a high reflection region, having a higher refractive index than that of the substrate and including a thin film having a relatively low refractive index and a thin film having a relatively high refractive index sequentially stacked on a predetermined region of the substrate; a low reflection region, having a lower reflectance than that of the substrate and including a thin film having a relatively low refractive index stacked around the high reflection region on the substrate; a DNA probe fixed at least on the high reflection region. A hybridization reaction between the DNA probe and a target DNA labeled with a fluorescent dye occurs on the high reflection region.

Abstract: A thin-film bandpass filter is provided. The thin-film bandpass filter includes a substrate, a plurality of first capacitors formed on the substrate, each being electrically connected in series, at least one second capacitor electrically connected to branch terminals positioned between the plurality of first capacitors, an inductor electrically connected in parallel to the second capacitor, and a plurality of supports for propping up the inductor so that the inductor is separated a predetermined space above the substrate and/or the second capacitor. The first and second capacitors, respectively, include a first metal layer, a dielectric layer, and a second metal layer, all of which are sequentially formed on the substrate. The inductor is comprised of a predetermined pattern of a thin-film metal layer propped by the plurality of supports, to both ends of which are electrically connected to the first and second metal layers of the second capacitor, and suspended by the substrate and/or the second capacitor.

Abstract: A method of fabricating an air gap type Film Bulk Acoustic Resonator (FBAR) is provided. The FBAR fabrication method includes: (a) depositing and patterning a sub-electrode on a semiconductor substrate; (b) depositing and patterning a piezoelectric material layer on the sub-electrode; (c) depositing and patterning an upper electrode on the piezoelectric material layer; (d) forming a hole which passes through the upper electrode, the piezoelectric material layer and the sub-electrode; and (e) injecting a fluorine compound into the hole so that an air gap can be formed on the semiconductor substrate, and non-plasma etching the semiconductor substrate. Since the FBAR fabrication method does not include forming and eliminating the sacrificial layer in the fabrication process, the fabrication process is simplified. In addition, the air gap having the limitless frequency selectivity can be formed and the performance of the FBAR can be enhanced.

Abstract: An apparatus for jetting ink utilizing a lamb wave and a method for producing the same, the apparatus including an ink chamber having nozzles, and an ejecting force source for supplying an ejecting force to eject the ink out of the nozzles. The ejecting force source includes inter-digital transducer electrodes for applying a voltage of a predetermined voltage, a piezoelectric element for generating the lamb wave by means of the voltage applied from the inter-digital transducer electrodes. Thus, as the voltage is applied to the inter-digital transducer electrodes, the lamb wave is generated from the lamb wave generating board, and the ink reserved in the ink chamber is ejected out of the nozzles.

Abstract: The present invention relates to an apparatus for simultaneous plating with which arc ion plating and hollow cathode discharge (HCD) ion plating can be concurrently carried out in one chamber, and sputtering plating can also be performed in the other chamber while the former two types of platings are being performed. Since only one type of plating can be performed in one chamber with a conventional apparatus, there have been problems such as excessive installation cost and inferior plating quality. According to the present invention, simultaneous arc ion plating and HCD ion plating in one chamber and sputtering plating in the other one is possible, which may lower the installation cost and improve the plating quality.