Abstract: A manufacturing method of a positive electrode for a lithium secondary battery includes: a step of preparing a positive electrode in which a positive electrode active material layer including a lithium iron phosphate formed on a current collector; and a step of adsorbing an organic solvent to the positive electrode active material layer, the organic solvent including one or more of N-methyl-2-pyrrolidone (NMP), acetone, ethanol, propylene carbonate, ethylmethyl carbonate, ethylene carbonate, and dimethyl carbonate.

Abstract: An electrode including a current collector; and an electrode active material layer disposed on at least one surface of the current collector is disclosed. The electrode active material layer includes a lower layer region facing the current collector, and an upper layer region facing the lower layer region and extended to the surface of the electrode active material layer. The lower layer region includes a first active material and a first non-rubbery binder and is free from a rubbery binder. The upper layer region includes a second active material, a second non-rubbery binder, and a rubbery binder. The rubbery binder is a hydrogenated nitrile butadiene rubber (H-NBR). Each of the first non-rubbery binder and the second non-rubbery binder includes a polyvinylidene fluoride (PVDF)-based polymer, and the weight ratio of the second non-rubbery binder to the rubbery binder in the upper layer region is 1:0.03-1:0.07.

Abstract: An electrode including a current collector; and an electrode active material layer disposed on at least one surface of the current collector is disclosed. The electrode active material layer includes a lower layer region facing the current collector, and an upper layer region facing the lower layer region and extended to the surface of the electrode active material layer. The lower layer region includes a first active material and a first non-rubbery binder and is free from a rubbery binder. The upper layer region includes a second active material, a second non-rubbery binder, and a rubbery binder. The rubbery binder is a hydrogenated nitrile butadiene rubber (H-NBR). Each of the first non-rubbery binder and the second non-rubbery binder includes a polyvinylidene fluoride (PVDF)-based polymer, and the weight ratio of the second non-rubbery binder to the rubbery binder in the upper layer region is 1:0.03-1:0.07.

Abstract: A positive electrode slurry composition includes a positive electrode active material, a conductive material, a binder, a dispersant, and a solvent, wherein the positive electrode active material includes lithium iron phosphate, the lithium iron phosphate has an average particle diameter D50 of 1.5 ?m or more, and the dispersant is included in an amount of 0.2 parts by weight to 0.9 parts by weight with respect to 100 parts by weight of solids in the positive electrode slurry composition.

Abstract: A positive electrode slurry composition includes a positive electrode active material, a binder, a dispersant, and a solvent, wherein the positive electrode active material includes lithium iron phosphate including a carbon coating layer on the surface thereof, and the binder includes polyvinylidene fluoride satisfying the following Expression 1 0?{(2A+B)/(C+D)}×100<0.2??[Expression 1] wherein A, B, C, and D are the integrated areas of respective peaks exhibited at 11.5 ppm to 12.8 ppm, 3.9 ppm to 4.2 ppm, 2.6 ppm to 3.2 ppm, and 2.1 ppm to 2.35 ppm as measured by 1H-NMR of the polyvinylidene fluoride.

Abstract: A positive electrode slurry composition includes a positive electrode active material, a dispersant, a conductive material, a binder, and a solvent, wherein the positive electrode active material includes lithium iron phosphate, and the dispersant has a weight-average molecular weight of 10,000 g/mol to 150,000 g/mol.

Abstract: The present invention relates to a secondary battery in which a temperature sensor is used to trace temperatures in real-time at several positions within the secondary battery and specify a time and point at which abnormal heat generation starts, to prevent deterioration due to transfer of heat to the whole system and improve safety of a product and stability of the whole system, and a detecting system. The secondary battery according to the present invention includes an electrode assembly, in which a plurality of unit cells including a positive electrode, a negative electrode, and a separator are stacked, and a case in which the electrode assembly is accommodated. The electrode assembly further includes a temperature sensor that measures a temperature therein.

Abstract: In the present disclosure, disclosed are a novel compound semiconductor which can be used as a thermoelectric material or the like, and applications thereof. A compound semiconductor according to the present disclosure can be represented by the following chemical formula 1: <Chemical formula 1>[Bi1-xMxCuu-wTwOa-yQ1yTebSez]Ac, where, in the chemical formula 1, M is one or more elements selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb; Q1 is one or more elements selected from the group consisting of S, Se, As and Sb; T is one or more elements selected from transition metal elements; A is one or more elements selected from the group consisting of transition metal elements and compounds of transition metal elements and group VI elements; and 0?x<1, 0.5?u?1.5, 0?w?1, 0.2<a<1.5, 0?y<1.5, 0?b<1.5, 0?z<1.5 and 0<c<0.2.

Abstract: Provided are: a compound semiconductor thermoelectric material, having excellent thermoelectric conversion performance by having an excellent power factor and ZT value, and in particular, having excellent thermoelectric conversion performance at a low temperature; a method for manufacturing the same; and a thermoelectric module, a thermoelectric generator, or a thermoelectric cooling device, etc. using the same. The compound semiconductor thermoelectric material according to the present invention comprises: an n-type compound semiconductor matrix; and n-type particles which are dispersed in the matrix, are compound semiconductors which are different from the matrix, and have an average particle size of 1 ?m to 100 ?m.

Abstract: In the present disclosure, disclosed are a novel compound semiconductor which can be used as a thermoelectric material or the like, and applications thereof. A compound semiconductor according to the present disclosure can be represented by the following chemical formula 1: <Chemical formula 1>[Bi1?xMxCuu?wTwOa?yQ1yTebSez]Ac, where, in the chemical formula 1, M is one or more elements selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb; Q1 is one or more elements selected from the group consisting of S, Se, As and Sb; T is one or more elements selected from transition metal elements; A is one or more elements selected from the group consisting of transition metal elements and compounds of transition metal elements and group VI elements; and 0?x<1, 0.5?u?1.5, 0<w?1, 0.2<a<1.5, 0?y<1.5, 0?b<1.5, 0?z<1.5 and 0<c<0.2.

Abstract: Disclosed is a new compound semiconductor material which may be used for thermoelectric material or the like, and its applications. The compound semiconductor may be represented by Chemical Formula 1 below: Chemical Formula 1 Bi1-xMxCu1-wTwOa-yQ1yTebSez where, in Chemical Formula 1, M is at least one selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb, Q1 is at least one selected from the group consisting of S, Se, As and Sb, T is at least one selected from the group consisting of transition metal elements, 0?x<1, 0<w<1, 0.2<a<1.5, 0?y<1.5, 0?b<1.5 and 0?z<1.5.

Abstract: Disclosed is a new compound semiconductor material which may be used for thermoelectric material or the like, and its applications. The compound semiconductor may be represented by Chemical Formula 1 below: Chemical Formula 1 <Chemical Formula 1> Bi2TexSea-xInyMz where, in Chemical Formula 1, M is at least one selected from the group consisting of Cu, Fe, Co, Ag and Ni, 2.5<x<3.0, 3.0?a<3.5, 0<y and 0?z.

Abstract: Disclosed is a new compound semiconductor material which may be used for thermoelectric material or the like, and its applications. The compound semiconductor may be represented by Chemical Formula 1 below: Chemical Formula 1 Bi1-xMxCu1-wTwOa-yQ1yTebSez where, in Chemical Formula 1, M is at least one selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb, Q1 is at least one selected from the group consisting of S, Se, As and Sb, T is at least one selected from the group consisting of transition metal elements, 0?x<1, 0<w<1, 0.2<a<1.5, 0?y<1.5, 0?b<1.5 and 0?z<1.5.

Abstract: Disclosed is a new compound semiconductor material which may be used for thermoelectric material or the like, and its applications. The compound semiconductor may be represented by Chemical Formula 1 below: Chemical Formula 1 <Chemical Formula 1> Bi2TexSen?xInyMz where in Chemical Formula 1, M is at least one selected from the group consisting of Cu, Fe, Co, Ag and Ni, 2.5<x<3.0, 3.0?a<3.5, 0<y and 0?z.

Abstract: Provided is a method of fabricating polycrystalline ceramic for thermoelectric devices. The method includes preparing calcined ceramic powders, forming a ceramic sheet by uni-axially pressing the calcined ceramic powders, stacking a plurality of the ceramic sheets in a uni-axial direction, and cofiring the stacked the plurality of the ceramic sheets.