Abstract: An electrode including a current collector; and an electrode active material layer disposed on at least one surface of the current collector is disclosed. The electrode active material layer includes a lower layer region facing the current collector, and an upper layer region facing the lower layer region and extended to the surface of the electrode active material layer. The lower layer region includes a first active material and a first non-rubbery binder and is free from a rubbery binder. The upper layer region includes a second active material, a second non-rubbery binder, and a rubbery binder. The rubbery binder is a hydrogenated nitrile butadiene rubber (H-NBR). Each of the first non-rubbery binder and the second non-rubbery binder includes a polyvinylidene fluoride (PVDF)-based polymer, and the weight ratio of the second non-rubbery binder to the rubbery binder in the upper layer region is 1:0.03-1:0.07.

Abstract: An electrode including a current collector; and an electrode active material layer disposed on at least one surface of the current collector is disclosed. The electrode active material layer includes a lower layer region facing the current collector, and an upper layer region facing the lower layer region and extended to the surface of the electrode active material layer. The lower layer region includes a first active material and a first non-rubbery binder and is free from a rubbery binder. The upper layer region includes a second active material, a second non-rubbery binder, and a rubbery binder. The rubbery binder is a hydrogenated nitrile butadiene rubber (H-NBR). Each of the first non-rubbery binder and the second non-rubbery binder includes a polyvinylidene fluoride (PVDF)-based polymer, and the weight ratio of the second non-rubbery binder to the rubbery binder in the upper layer region is 1:0.03-1:0.07.

Abstract: In the present disclosure, disclosed are a novel compound semiconductor which can be used as a thermoelectric material or the like, and applications thereof. A compound semiconductor according to the present disclosure can be represented by the following chemical formula 1: <Chemical formula 1>[Bi1-xMxCuu-wTwOa-yQ1yTebSez]Ac, where, in the chemical formula 1, M is one or more elements selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb; Q1 is one or more elements selected from the group consisting of S, Se, As and Sb; T is one or more elements selected from transition metal elements; A is one or more elements selected from the group consisting of transition metal elements and compounds of transition metal elements and group VI elements; and 0?x<1, 0.5?u?1.5, 0?w?1, 0.2<a<1.5, 0?y<1.5, 0?b<1.5, 0?z<1.5 and 0<c<0.2.

Abstract: Provided are: a compound semiconductor thermoelectric material, having excellent thermoelectric conversion performance by having an excellent power factor and ZT value, and in particular, having excellent thermoelectric conversion performance at a low temperature; a method for manufacturing the same; and a thermoelectric module, a thermoelectric generator, or a thermoelectric cooling device, etc. using the same. The compound semiconductor thermoelectric material according to the present invention comprises: an n-type compound semiconductor matrix; and n-type particles which are dispersed in the matrix, are compound semiconductors which are different from the matrix, and have an average particle size of 1 ?m to 100 ?m.

Abstract: In the present disclosure, disclosed are a novel compound semiconductor which can be used as a thermoelectric material or the like, and applications thereof. A compound semiconductor according to the present disclosure can be represented by the following chemical formula 1: <Chemical formula 1>[Bi1?xMxCuu?wTwOa?yQ1yTebSez]Ac, where, in the chemical formula 1, M is one or more elements selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb; Q1 is one or more elements selected from the group consisting of S, Se, As and Sb; T is one or more elements selected from transition metal elements; A is one or more elements selected from the group consisting of transition metal elements and compounds of transition metal elements and group VI elements; and 0?x<1, 0.5?u?1.5, 0<w?1, 0.2<a<1.5, 0?y<1.5, 0?b<1.5, 0?z<1.5 and 0<c<0.2.

Abstract: Disclosed is a new compound semiconductor material which may be used for thermoelectric material or the like, and its applications. The compound semiconductor may be represented by Chemical Formula 1 below: Chemical Formula 1 Bi1-xMxCu1-wTwOa-yQ1yTebSez where, in Chemical Formula 1, M is at least one selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb, Q1 is at least one selected from the group consisting of S, Se, As and Sb, T is at least one selected from the group consisting of transition metal elements, 0?x<1, 0<w<1, 0.2<a<1.5, 0?y<1.5, 0?b<1.5 and 0?z<1.5.

Abstract: Disclosed is a new compound semiconductor material which may be used for thermoelectric material or the like, and its applications. The compound semiconductor may be represented by Chemical Formula 1 below: Chemical Formula 1 <Chemical Formula 1> Bi2TexSea-xInyMz where, in Chemical Formula 1, M is at least one selected from the group consisting of Cu, Fe, Co, Ag and Ni, 2.5<x<3.0, 3.0?a<3.5, 0<y and 0?z.

Abstract: Disclosed is a new compound semiconductor material which may be used for thermoelectric material or the like, and its applications. The compound semiconductor may be represented by Chemical Formula 1 below: Chemical Formula 1 Bi1-xMxCu1-wTwOa-yQ1yTebSez where, in Chemical Formula 1, M is at least one selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb, Q1 is at least one selected from the group consisting of S, Se, As and Sb, T is at least one selected from the group consisting of transition metal elements, 0?x<1, 0<w<1, 0.2<a<1.5, 0?y<1.5, 0?b<1.5 and 0?z<1.5.

Abstract: Disclosed is a new compound semiconductor material which may be used for thermoelectric material or the like, and its applications. The compound semiconductor may be represented by Chemical Formula 1 below: Chemical Formula 1 <Chemical Formula 1> Bi2TexSen?xInyMz where in Chemical Formula 1, M is at least one selected from the group consisting of Cu, Fe, Co, Ag and Ni, 2.5<x<3.0, 3.0?a<3.5, 0<y and 0?z.

Abstract: Provided is a method of fabricating polycrystalline ceramic for thermoelectric devices. The method includes preparing calcined ceramic powders, forming a ceramic sheet by uni-axially pressing the calcined ceramic powders, stacking a plurality of the ceramic sheets in a uni-axial direction, and cofiring the stacked the plurality of the ceramic sheets.