Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an extreme ultraviolet (EUV) lithography mask and methods of manufacture. The EUV mask structure includes: a reflective layer; a capping material on the reflective layer; a buffer layer on the capping layer; alternating absorber layers on the buffer layer; and a capping layer on the top of the alternating absorber layers.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an extreme ultraviolet (EUV) lithography mask and methods of manufacture. The EUV mask structure includes: a reflective layer; a capping material on the reflective layer; a buffer layer on the capping layer; alternating absorber layers on the buffer layer; and a capping layer on the top of the alternating absorber layers.

Abstract: Disclosed herein are various pellicles for use during extreme ultraviolet (EUV) photolithography processes. An EUV radiation device disclosed herein includes a reticle, a substrate support stage, a pellicle positioned between the reticle and the substrate support stage, wherein the pellicle includes an aerogel grid and a membrane formed on the aerogel grid, and a radiation source that is adapted to generate radiation at a wavelength of about 20 nm or less that is to be directed through the pellicle toward the reticle.

Abstract: Disclosed herein are various pellicles for use during extreme ultraviolet (EUV) photolithography processes. An EUV radiation device disclosed herein includes a reticle, a substrate support stage, a pellicle positioned between the reticle and the substrate support stage, wherein the pellicle includes an aerogel grid and a membrane formed on the aerogel grid, and a radiation source that is adapted to generate radiation at a wavelength of about 20 nm or less that is to be directed through the pellicle toward the reticle.

Abstract: An alternating phase shift mask for use with extreme ultraviolet lithography is provided. A substrate with a planar top surface is used as a base for the phase shift mask. A spacer layer serves as a Fabry-Perot cavity for controlling the phase shift difference between two adjacent surfaces of the phase shift mask and controlling the reflectivity from the top of the second multilayer. A protective layer serves as an etch stop layer to protect a first multilayer region in certain regions of the phase shift mask, while other regions of the phase shift mask utilize a second multilayer region for achieving a phase shift difference. Some embodiments may further include an absorber layer region to provide areas with no reflectance, in addition to the areas of alternating phase shift. Embodiments of the present invention may be used to monitor the focus and aberration of a lithography tool.

Abstract: Carbon contamination of optical elements in an exposure tool is minimized by incorporating a hydrocarbon getter. Embodiments include EUV lithography tools provided with at least one hydrocarbon getter comprising a substrate and a high energy source, such as an electron gun or separate EUV source, positioned to direct an energy beam, having sufficient energy to crack heavy hydrocarbons and form carbon, on the substrate. Embodiments also include exposure tools equipped with a hydrocarbon getter comprising an energy source positioned to impinge a beam of energy on a quartz crystal thickness monitor, a residual gas analyzer, and a controller to control the electron-current and maintain the amount of hydrocarbons in the system at a predetermined low level.

Abstract: Precise and repeatable alignment performance using asymmetric illumination is achieved by properly structuring, as by segmenting, an alignment mark on a reticle of a photolithographic exposure apparatus as a function of the type of asymmetric illumination, thereby improving resolution and repeatability of an alignment mark formed on a target substrate. Embodiments include double exposure techniques using dipole illumination with an angularly segmented alignment mark, e.g., at 45°, such that the first-order diffracted light is sent at 45° from the initial position of the dipole illumination.

Abstract: Carbon contamination of optical elements in an exposure tool is minimized by incorporating a hydrocarbon getter. Embodiments include EUV lithography tools provided with at least one hydrocarbon getter comprising a substrate and a high energy source, such as an electron gun or separate EUV source, positioned to direct an energy beam, having sufficient energy to crack heavy hydrocarbons and form carbon, on the substrate. Embodiments also include exposure tools equipped with a hydrocarbon getter comprising an energy source positioned to impinge a beam of energy on a quartz crystal thickness monitor, a residual gas analyzer, and a controller to control the electron-current and maintain the amount of hydrocarbons in the system at a predetermined low level.

Abstract: The operating principle of the attenuated phase mask is incorporated in a reflecting structure for use with extreme ultraviolet radiation. A working projection-reduction system for use with 0.18 .mu.m and smaller features combines the mask with all-reflecting optics.

Abstract: The fabrication of integrated circuit devices built to design rules of 0.18 .mu.m and below uses patterning radiation in the EUV spectrum. Optimized processing conditions take advantage of independently developed EUV characteristics such as short resist absorption lengths.

Abstract: A single crystal fluorescent material is used in the conversion of a short wavelength image. Conversion to a long wavelength image in the visible spectrum permits use of conventional glass optics for visual observation of UV and x-ray images. An illustrative use is in inspection of masks designed for use in fabrication of large scale integrated circuitry built to submicron design rules.

Abstract: A laser surgical instrument uses a CO.sub.2 laser source and an articulated arm structure to maintain single mode transmission of a 10.6 .mu.m beam to probe. In one configuration, high power is maintained for photo-transection and/or photocauterization. A second probe embodiment introduces other degrees of functionality such as aspiration, irrigation and internal viewing. Internal illumination is achieved by using the sheaths of quartz waveguides to transmit visible light while the laser beam is propagated internally in the waveguide structure.

Abstract: In an arc discharge device, a thin film bridges the gap(s) between adjacent electrodes, thereby enabling the arc discharge to be initiated and sustained by a low voltage D.C. supply. Application of the invention to both light source (e.g., laser) and material working (e.g., metal deposition) embodiments is described. One of the light source embodiments utilizes a cathode electrode which includes a pool of liquid Hg to generate a Hg ion plasma.

Abstract: Continuous wave laser oscillation has been achieved in a segmented plasma excitation and recombination device in the presence of a low-pressure background gas which rapidly flows across the segmented electrodes. Laser action has been observed in Cd I at 1.40, 1.43, 1.44, and 1.64 .mu.m. Also disclosed are techniques for allowing the background gas to flow between the electrodes and for confining the expanding plasmas with shields in the vicinity of the gaps between electrodes.

Abstract: Numerous laser transitions in the visible and near-infrared in four metal vapors (Li, Al, Ca, and Cu) have been observed in the recombination phase of the expanding plasmas produced by a segmented plasma device employing foil electrodes. Also described is a segmented vapor plasma discharge in using Ni foil electrodes.

Abstract: A segmented plasma excitation and recombination (SPER) device is employed in a deposition scheme in which the plasma generated in the gap between adjacent electrodes is formed into a beam of ions/atoms by flowing a background gas through the gap. The beam strikes a workpiece and deposits a layer of the vaporized electrode material thereon. Also described are techniques where the ions react with workpiece or the background gas to form a layer, as well as where the ions bombard the workpiece to etch away a layer.

Abstract: An electrical signal, such as a high current pulse, is applied to a series of two or more conducting strips (101-110) installed in series in a laser cavity (150, 151) containing either a buffer gas or a vacuum. The strips are separated by small gaps. When the electrical signal is applied to the strips, plasmas (141-149) are formed in the gap regions. The plasmas are comprised of ions from the strip material. Once formed, these plasmas expand hemispherically, cool and recombine to generate radiation. The composition of the plasmas depends on the strip material, the electric field in the gaps, the gap size and the background gas type and pressure.

Abstract: The present invention comprises an apparatus which provides a combination of excitation pulses or a signle shaped excitation pulse to a plasma-recombination laser which both creates the plasma and controls the electron-ion collisional recombination rate therein. The application of the single shaped excitation pulse or combination of excitation pulses keeps the electron temperature of the plasma at a temperature unfavorable to recombination until the electron density has fallen into the optimum range for laser action. The termination of the excitation pulse or pulses results in immediate laser action having power at least several orders of magnitude over that achieved in the prior art.

Abstract: An efficient recombination laser comprises a resonant laser cavity, a gaseous laser material disposed in the cavity, and means for providing a plasma discharge in said laser material, which plasma discharge is confined to a cylindrical region along the axis of the laser cavity. The plasma in the gaseous laser material expands outward radially from the cylindrical region at the axis of the cavity and cools by interacting with the adjacent unexcited gas. The maximum laser gain is provided in an annular region, which annular region is adjacent to and surrounds the initial discharge cylindrical region. In one embodiment of the present invention, the means for providing the plasma discharge comprises two pin-type electrodes which extend into the cavity along the cavity axis.

Abstract: A high-voltage, high current pulse is applied to a series of two or more conducting strips (101-110) installed in series in a laser cavity (150-151) containing either a buffer gas or a vacuum. The strips are separated by small gaps. When the high-voltage, high-current pulse is applied to the strips, plasmas (141-149) are formed in the gap regions. The plasmas are comprised of ions from the strip material. Once formed, these plasmas expand hemispherically, cool and recombine to provide laser action. The composition of the plasmas depends on the strip material, the electric field in the gaps, the gap size and the background gas type and pressure.