Abstract: Extreme ultraviolet mirrors and masks used in lithography and methods for manufacturing an extreme ultraviolet mirror or mask. Initial data is obtained that includes materials and optical properties for a first intermixed layer, a second intermixed layer, a first pure layer, and a second pure layer in each of a plurality of periods of a multi-layer stack for an optical element. For multiple thicknesses for the first pure layer and multiple thicknesses for the second pure layer, a reflectivity of the multi-layer stack is determined based on the initial data, a thickness received for the first intermixed layer, and a thickness received for the second intermixed layer. One of the thicknesses for the first pure layer and one of the thicknesses for the second pure layer are selected that maximize the reflectivity of the multi-layer stack.

Abstract: Extreme ultraviolet mirrors and masks used in lithography and methods for manufacturing an extreme ultraviolet mirror or mask. Initial data is obtained that includes materials and optical properties for a first intermixed layer, a second intermixed layer, a first pure layer, and a second pure layer in each of a plurality of periods of a multi-layer stack for an optical element. For multiple thicknesses for the first pure layer and multiple thicknesses for the second pure layer, a reflectivity of the multi-layer stack is determined based on the initial data, a thickness received for the first intermixed layer, and a thickness received for the second intermixed layer. One of the thicknesses for the first pure layer and one of the thicknesses for the second pure layer are selected that maximize the reflectivity of the multi-layer stack.

Abstract: Methods for creating a EUV photolithography mask with a thinner highly EUV absorbing absorber layer and the resulting device are disclosed. Embodiments include forming a multilayer reflector (MLR); forming first and second layers of a first EUV absorbing material over the MLR, the second layer being between the first layer and the MLR; and implanting the first layer with particles of a second EUV absorbing material, wherein the first EUV absorbing material is etchable and has a lower EUV absorption coefficient than the second EUV absorbing material, and wherein the implanted particles are substantially separated from each other.

Abstract: A novel blazed grating spectral filter disclosed herein includes a multilayer stack of materials that is formed on a wedge-shaped substrate wherein the upper surface of the substrate is oriented at an angle relative the bottom surface of the substrate and wherein the angle corresponds to the blaze angle of the blazed grating filter. Various methods of forming such a filter are also disclosed such as, for example, performing a planarization process in a CMP tool to define the wedge-shaped substrate, thereafter forming the multilayer stack of materials above the upper planarized surface of the substrate and etching recesses into the multilayer stack.

Abstract: Methods for creating a EUV photolithography mask with a thinner highly EUV absorbing absorber layer and the resulting device are disclosed. Embodiments include forming a multilayer reflector (MLR); forming first and second layers of a first EUV absorbing material over the MLR, the second layer being between the first layer and the MLR; and implanting the first layer with particles of a second EUV absorbing material, wherein the first EUV absorbing material is etchable and has a lower EUV absorption coefficient than the second EUV absorbing material, and wherein the implanted particles are substantially separated from each other.

Abstract: A scattering enhanced thin absorber for a EUV reticle and a method of making thereof is disclosed. Embodiments include forming a multilayer on the upper surface of a substrate, forming a capping layer over the multilayer, forming one or more diffuse scattering layers over the capping layer, and etching the diffuse scattering layers to form a stack.

Abstract: A method of determining a dose-to-clear of a photoresist on a wafer includes providing an image of the wafer after the photoresist was exposed to a dose of energy and was developed, transforming the image of the wafer into frequency spectrum data, calculating an average frequency spectrum component of the frequency spectrum data, calculating a difference between the average frequency spectrum component and a noise average frequency spectrum component of a noise average frequency spectrum, and determining a dose-to-clear of the photoresist based on the difference between the average frequency spectrum component and the noise average frequency spectrum component.

Abstract: Methods and controllers for controlling focus of ultraviolet light produced by a lithographic imaging system, and apparatuses for forming an integrated circuit employing the same are provided. In an embodiment, a method includes providing a wafer having a resist film disposed thereon. The resist film is patterned through illumination of a lithography mask with ultraviolet light at an off-normal incidence angle with a first test pattern formed at a first pitch and a second test pattern formed at a second pitch different from the first pitch. Non-telecentricity induced shift of the first and second test patterns is measured to produce relative shift data using a measurement device. Focus of the ultraviolet light is adjusted based upon comparison of the relative shift data to a pre-determined correlation between the non-telecentricity induced shift of the first and second test patterns as a function of focus error.

Abstract: A novel blazed grating spectral filter disclosed herein includes a multilayer stack of materials that is formed on a wedge-shaped substrate wherein the upper surface of the substrate is oriented at an angle relative the bottom surface of the substrate and wherein the angle corresponds to the blaze angle of the blazed grating filter. Various methods of forming such a filter are also disclosed such as, for example, performing a planarization process in a CMP tool to define the wedge-shaped substrate, thereafter forming the multilayer stack of materials above the upper planarized surface of the substrate and etching recesses into the multilayer stack.

Abstract: A scattering enhanced thin absorber for a EUV reticle and a method of making thereof is disclosed. Embodiments include forming a multilayer on the upper surface of a substrate, forming a capping layer over the multilayer, forming one or more diffuse scattering layers over the capping layer, and etching the diffuse scattering layers to form a stack.

Abstract: A Fabry-Perot thin absorber for an extreme ultraviolet (EUV) reticle and a method of making is disclosed. Embodiments include forming a molybdenum/silicon (Mo/Si) multilayer on an upper surface of a substrate; forming a ruthenium (Ru) capping layer over the Mo/Si multilayer; forming an absorber cavity layer over the Ru layer; forming two or more pairs of a silicon (Si) layer and an absorbing layer over the absorber cavity layer; and etching the Si layers, absorbing layers, and the absorber cavity layer to form a stack.

Abstract: According to one exemplary embodiment, a laser beam formatting module for use in a lithographic system to fabricate a semiconductor wafer comprises an aperture plate having, for example, a circular aperture and capable of being situated between a laser source and a target, and a lens assembly, in a light path between the aperture plate and the target. The laser beam formatting module can produce a substantially uniform laser beam intensity across a target during fabrication of a semiconductor wafer in a laser-produced plasma (LPP) lithographic process using, for example, extreme ultraviolet light (EUV). In one embodiment, a laser beam formatting module improves energy conversion efficiency, reduces out-of-band radiation emission, avoids heating of reflective optics, and eliminates the need for an out-of-band radiation filter.

Abstract: One exemplary embodiment is a method for detecting existence of an undesirable particle between a planar lithographic object, such as a semiconductor wafer or a lithographic mask, and a chuck during semiconductor fabrication. The exemplary method in this embodiment includes placing the planar lithographic object, such as the semiconductor wafer, over the chuck. The method further includes measuring a change in at least one electrical characteristic formed by and between the chuck and the planar lithographic object, such as measuring a change in capacitance between the chuck and semiconductor wafer, caused by the undesirable particle.

Abstract: According to one exemplary embodiment, an extreme ultraviolet (EUV) pellicle for protecting a lithographic mask includes an aerogel film. The pellicle further includes a frame for mounting the aerogel film over the lithographic mask. The aerogel film causes the pellicle to have increased EUV light transmittance.

Abstract: According to one exemplary embodiment, an extreme ultraviolet (EUV) source collector module for use in a lithographic tool comprises an EUV debris mitigation filter. The EUV debris mitigation filter can be in the form of an aerogel film, and can be used in combination with an EUV debris mitigation module comprising a combination of conventional debris mitigation techniques. The EUV debris mitigation filter protects collector optics from contamination by undesirable debris produced during EUV light emission, while advantageously providing a high level of EUV light transmittance. One disclosed embodiment comprises implementation of an EUV debris mitigation filter in an EUV source collector module utilizing a discharge-produced plasma (DPP) light source. One disclosed embodiment comprises implementation of an EUV debris mitigation filter in an EUV source collector module utilizing a laser-produced plasma (LPP) light source.

Abstract: A deformable holder, system, and process where long range errors (any of lithography, metrology, or overlay errors) between the image of a mask and an existing pattern on a wafer from a number of potential sources are corrected. The long range errors are determined using either a through-the-lens alignment metrology system or an around-the-lens metrology system. Deformation values are determined to compensate for the longe range errors. The deformation values are determined by either solving simultaneous equations or by finite-element linear-stress-analysis (FEA). The mask or wafer is then distorted, in-plane, by an amount related to the determined deformation values using an actuator such an a piezoelectric ceramic to push or pull the mask or wafer to substantially realign the projected image of the mask and the existing pattern on the wafer.

Abstract: Preionization is achieved in transverse-discharge gaseous lasers by means of the Malter effect. In two embodiments, the preionization is achieved either with a metal electrode which is the cathode during preionization and then is the anode during the subsequent pumping phase, or by means of a separate set of preionization electrodes. These preionization cathodes are metal electrodes, such as aluminum or tantalum electrodes, exhibiting high secondary electron emission by the Malter effect. High-field electron emission from these preionization cathodes is inherently possible because of a thin insulating layer on the surface. This layer separates positive ions attracted to the surface from the conducting metal and thereby creates a very high field gradient over a very short distance.