Abstract: An insulated gate semiconductor device (30) includes a gate (34), a source terminal (36), a drain terminal (38) and a variable input capacitance at the gate. A ratio between the input capacitance (Cfiss) when the device is on and the input capacitance Ciiss when the device is off is less than two and preferably substantially equal to one. This is achieved in one embodiment of the invention by an insulation layer 32 at the gate having an effective thickness dins larger than a minimum thickness.

Abstract: A distributed low noise amplifier (DLNA) comprises at least a first amplifier part 30.1 providing a first path 36.1 form an input of the amplifier to an output of the amplifier and a second amplifier part 30.2 providing a second path 36.2 from the input to the output. Each of the first and second paths being associated with a respective and different change in phase. The difference being larger than degrees in a noise suppression band to cause a phase difference between noise generated by the amplifier arrangement propagating along the first and second paths and destructive interference of the noise before the output of the DLNA, thereby to suppress noise in the noise suppression band. The respective gains of the amplifier parts 30.1 to 30.n may decrease in a direction from the input of the amplifier to the output thereof.

Abstract: A hardware random number generator (RNG) has a source of entropy for providing a bit stream (DIS) comprising successive bits of a first state and a second state. The RNG includes a first digital corrector circuit configured to provide from two successive bits in the bit stream an output bit of an output bit stream according to a first scheme to ensure that bits in the output bit stream are independent from one another. A serially connected second digital corrector circuit ensures that the bits in the output bit stream are also unbiased, so that the output bit stream is truly random. A Gaussian generator connected to an output of either the first corrector or the second corrector generates from the output bit stream words having standard Gaussian deviates.

Abstract: An insulated gate semiconductor device (30) includes a gate (34), a source terminal (36), a drain terminal (38) and a variable input capacitance at the gate. A ratio between the input capacitance (Cfiss) when the device is on and the input capacitance Ciiss when the device is off is less than two and preferably substantially equal to one. This is achieved in one embodiment of the invention by an insulation layer 32 at the gate having an effective thickness dins larger than a minimum thickness.

Abstract: An amplifier arrangement (10) comprises an input node (24) and an output node (26). A plurality of amplifiers (20.1) to 20.4) are connected in respective parallel paths (28.1 to 28.4) extending between the input node and the output node. The input node divides an input signal Si(t) into signal S1(t) to S4(t) and feeds the signal parts along respective paths to the output node. The paths have equal propagation delays for the signal parts, to provide at the output node an output signal So(t) comprising a coherent summation of the signal parts and an incoherent summation of noise.