Abstract: A metal oxide heterostructure includes mixing a first precursor and a second precursor to form a precursor aqueous mixture, adding at least one constituent to the precursor aqueous mixture to form a first solution, adding a nanostructuring reagent to the first solution to form a second solution, sonochemically treating the second solution to provide a metal oxide powder, filtering, washing, and drying the metal oxide powder to provide a metal oxide nanocomposite heterostructure for a sensing layer of a hydrogen sulfide sensor. A method for forming a hydrogen sulfide sensor includes the metal oxide heterostructure, forming a sensing material, contacting the sensing material with interdigitated electrodes to form a sensing layer, and thermally consolidating the sensing layer to form the hydrogen sulfide sensor.

Abstract: A battery balancing system includes an energy balancing circuit. Multiple battery cells are coupled to the energy balancing circuit. A health assessment circuit is coupled to the multiple battery cells and configured to sense a state of health and a charge of each of the multiple battery cells. The balancing circuit switches energy between the multiple battery cells as a function of the sensed state of health and state of charge of each of the multiple battery cells to balance charge there between.

Abstract: A hydrogen sulfide sensor is disclosed. The hydrogen sulfide sensor includes a substrate, a pair of interdigitated electrodes supported by the substrate, and a nanocomposite based sensing layer deposited on the interdigitated electrodes and configured to interact with hydrogen sulfide.

Abstract: In an embodiment, a benzene sensor comprises a substrate having an iodine complex disposed thereon, a radiation source configured to project UV radiation onto the complex, and a UV detector configured to detect a UV reflection off of the substrate having the iodine complex. The iodine complex can include a cyclodextrine-iodine complex such as an alpha-cyclodextrine-iodine complex, a ?-cyclodextrine iodine complex, or any combination thereof.

Abstract: An illustrative humidity sensor may include a substrate having a source and a drain, wherein the drain is laterally spaced from the source. A gate stack is provided in the space between the source and the drain to form a transistor. The gate stack may include a gate insulator situated on the substrate to form a gate insulator/substrate interface. The gate stack may further include a barrier layer above the gate insulator. The barrier layer may be configured to act as a barrier to mobile charge, humidity and/or other contaminates, and may help prevent such contaminates from reaching the gate insulator/substrate interface. The gate stack may further include a humidity sensing layer above the barrier layer. The humidity sensing layer, when exposed to humidity, may modulate the conduction channel in the substrate under the gate insulator and between the source and the drain. In some cases, the humidity level may be determined by monitoring the current flowing between the source and drain.

Abstract: An illustrative humidity sensor may include a substrate and a sensing field effect transistor. The sensing field effect transistor may comprise a source formed on the substrate, a drain formed on the substrate, a gate, and a piezoelectric layer disposed over the gate. Another illustrative humidity sensor may comprise a substrate, a semi-conductor layer disposed over the substrate, a piezoelectric layer disposed over the semi-conductor layer, a first electrode disposed on the piezoelectric layer, and a second electrode disposed on the piezoelectric layer. In some instances, the piezoelectric layer may comprise aluminum nitride.

Abstract: A diamond based oxygen sensor is able to function in harsh environment conditions. The oxygen sensor includes a gateless field effect transistor including a synthetic, quasi-intrinsic, hydrogen-passivated, monocrystalline diamond layer exhibiting a 2-dimension hole gas effect. The oxygen sensor also includes a sensing layer comprising yttrium-stabilized zirconia deposited onto a surface of the gateless field effect transistor.

Abstract: Various embodiments disclosed relate to anti-static compositions and gloves made from the same. In various embodiments, the present invention provides a doped polyaniline comprising a dopant that is a polyacrylic acid; a polymethacrylic acid; a sulfonatocalixarene; a cyclodextrin sulfate; a compound having the structure: wherein R2 is chosen from substituted or unsubstituted (C1-C10)hydrocarbyl- and substituted or unsubstituted (C1-C10)hydrocarbyl-O—. L1 is substituted or unsubstituted (C1-C10)hydrocarbylene. L2 is chosen from a bond, —O—, —O—C(O)—, and —NH—C(O)—, and n is about 1 to about 100,000; a salt thereof; or a combination thereof.

Abstract: An inner indicator glove formed of multiple layers including a protective layer having a top surface and a bottom surface, the bottom surface facing a hand of a user when wearing the inner indicator glove, and an indicator layer supported by the top surface of the protective layer and positioned to contact protective glove when the inner indicator glove is inserted into the protective glove, wherein the indicator layer is formed of a material that changes color when exposed to a solution penetrating the protective glove.

Abstract: A relative humidity sensor is disclosed. The relative humidity sensor includes a first electrode and a second electrode disposed above a dielectric substrate. A sensitive layer is disposed above the first electrode and the second electrode, where the sensitive layer is formed from a doped conductive polymer.

Abstract: The present disclosure relates to a nanostructured palladium-based flammable gas detector synthesized using sonochemistry. The nanostructured palladium-based flammable gas detectors may use nanostructured sensing materials to allow reduction of power consumption, where the nanostructures reduce power consumption due to their large specific area and increased porosity.

Abstract: A gas sensor includes a field effect transistor supported on an oxide layer of a substrate, the field effect transistor having a doped source (p+ doped for T-FET and n+ doped for FET) and an n+ doped drain separated by an channel region (intrinsic for T-FET or slightly p-doped for FET), and a floating gate separated from the channel region by a gate oxide, a passivation layer covering the floating gate, and a sensing layer supported by the passivation layer, the sensing layer comprising nanofibers.

Abstract: A relative humidity sensor is disclosed. The relative humidity sensor includes a first electrode and a second electrode disposed above a dielectric substrate. A sensitive layer is disposed above at least one of the first electrode and the second electrode, where the sensitive layer is formed from a composition including a polyimide and a hydrophobic filler. A dust protection layer is disposed above the sensitive layer.

Abstract: A diamond based oxygen sensor is able to function in harsh environment conditions. The oxygen sensor includes a gateless field effect transistor including a synthetic, quasi-intrinsic, hydrogen-passivated, monocrystalline diamond layer exhibiting a 2-dimension hole gas effect. The oxygen sensor also includes a sensing layer comprising yttrium-stabilized zirconia deposited onto a surface of the gateless field effect transistor.

Abstract: A humidity sensor having a sensing component and a reference component. Each component may indicate humidity by using a transistor that has an upper gate dielectric layer with a dielectric constant which varies according to exposure to a change of moisture. The sensing component may have its upper gate dielectric layer exposed to an ambient environment. The reference component may have its upper gate dielectric layer with an absence of exposure to any environment. Sensing and reference transistor outputs may be processed with differential electronics to provide an output to indicate humidity in the ambient environment. Differential processing may reflect an output having a high common mode rejection ratio. An example of an upper gate dielectric layer deposited over a thin gate dielectric layer may be a hydrophobic polymer material. Other materials may instead be used. The components and processing electronics may be transistor circuits fabricated with integrated circuit technology.

Abstract: A diamond based oxygen sensor is able to function in harsh environment conditions. The oxygen sensor includes a gateless field effect transistor including a synthetic, quasi-intrinsic, hydrogen-passivated, monocrystalline diamond layer exhibiting a 2-dimension hole gas effect. The oxygen sensor also includes a sensing layer comprising yttrium-stabilized zirconia deposited onto a surface of the gateless field effect transistor.

Abstract: The present disclosure relates to a carbon dioxide sensor able to function in harsh environment, conditions. The carbon dioxide sensor can include a gate-less field effect transistor including a synthetic, quasi-intrinsic, hydrogen-passivated, single-crystal diamond layer exhibiting a 2-dimension hole gas effect, and a sensing layer comprising both a polymer and a hygroscopic material deposited onto a surface of the gate-less field effect transistor.

Abstract: A diamond based oxygen sensor is able to function in harsh environment conditions. The oxygen sensor includes a gateless field effect transistor including a synthetic, quasi-intrinsic, hydrogen-passivated, monocrystalline diamond layer exhibiting a 2-dimension hole gas effect. The oxygen sensor also includes a sensing layer comprising yttrium-stabilized zirconia deposited onto a surface of the gateless field effect transistor.

Abstract: The present disclosure relates to a nanostructured palladium-based flammable gas detector synthesized using sonochemistry. The nanostructured palladium-based flammable gas detectors may use nanostructured sensing materials to allow reduction of power consumption, where the nanostructures reduce power consumption due to their large specific area and increased porosity.

Abstract: A hydrogen sulfide sensor is disclosed. The hydrogen sulfide sensor includes a substrate, a pair of interdigitated electrodes supported by the substrate, and a nanocomposite based sensing layer deposited on the interdigitated electrodes and configured to interact with hydrogen sulfide.