Patents by Inventor Oded Millo

Oded Millo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thermal doping by vacancy formation in nanocrystals
    Patent number: 9754802
    Abstract: The invention generally relates to methods of thermal doping by vacancy formation in nanocrystals, devices and uses thereof.
    Type: Grant
    Filed: July 10, 2014
    Date of Patent: September 5, 2017
    Assignee: YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD.
    Inventors: Uri Banin, Kathy Vinokurov, Oded Millo, Yehonadav Bekenstein
  • Heavily doped semiconductor nanoparticles
    Patent number: 9543385
    Abstract: Herein, provided are heavily doped colloidal semiconductor nanocrystals and a process for introducing an impurity to semiconductor nanoparticles, providing control of band gap, Fermi energy and presence of charge carriers. The method is demonstrated using InAs colloidal nanocrystals, which are initially undoped, and are metal-doped (Cu, Ag, Au) by adding a metal salt solution.
    Type: Grant
    Filed: February 14, 2012
    Date of Patent: January 10, 2017
    Assignees: YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD., RAMOT AT TEL-AVIV UNIVERSITY LTD.
    Inventors: Guy Cohen, Oded Millo, David Mocatta, Eran Rabani, Uri Banin
  • THERMAL DOPING BY VACANCY FORMATION IN NANOCRYSTALS
    Publication number: 20160133481
    Abstract: The invention generally relates to methods of thermal doping by vacancy formation in nanocrystals, devices and uses thereof.
    Type: Application
    Filed: July 10, 2014
    Publication date: May 12, 2016
    Applicant: YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD.
    Inventors: Uri BANIN, Kathy VINOKUROV, Oded MILLO, Yehonadav BEKENSTEIN
  • HEAVILY DOPED SEMICONDUCTOR NANOPARTICLES
    Publication number: 20130299772
    Abstract: Herein, provided are heavily doped colloidal semiconductor nanocrystals and a process for introducing an impurity to semiconductor nanoparticles, providing control of band gap, Fermi energy and presence of charge carriers. The method is demonstrated using InAs colloidal nanocrystals, which are initially undoped, and are metal-doped (Cu, Ag, Au) by adding a metal salt solution.
    Type: Application
    Filed: February 14, 2012
    Publication date: November 14, 2013
    Applicants: RAMOT AT TEL-AVIV UNIVERSITY LTD., YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD.
    Inventors: Guy Cohen, Oded Millo, David Mocatta, Eran Rabani, Uri Banin