Patents by Inventor Odette Turmel
Odette Turmel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8222155Abstract: A method in a plasma processing system for etching a feature through a given layer on a semiconductor substrate. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method also includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the given layer. The method additionally includes striking a plasma from the etchant source gas. Furthermore, the method includes etching the feature at least partially through the given layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 45 MHz and about 75 MHz. The bias RF signal further has a bias RF power component that is configured to cause the etch feature to be etched with an etch selectivity to a second layer of the substrate that is higher than a predefined selectivity threshold.Type: GrantFiled: January 4, 2008Date of Patent: July 17, 2012Assignee: Lam Research CorporationInventors: Kenji Takeshita, Odette Turmel, Felix Kozakevich, Eric Hudson
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Publication number: 20110244600Abstract: A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si—(R)x(OR?)y, where y?1 and x+y=4, and wherein R is an alkyl or aryl group and R? is an alkyl or aryl group and a second repair agent represented as Si—(R)x(OR?)yR?, where y?1 and x+y=3, and wherein R is an alkyl or aryl group and R? is an alkyl or aryl group, and R? is of a group that reduces interfacial surface tension between a wet clean chemical and the low-k dielectric. Some of the first repair agent and second repair agent are bonded to the low-k dielectric to form a monolayer of the first repair agent and the second repair agent.Type: ApplicationFiled: June 10, 2011Publication date: October 6, 2011Applicant: LAM RESEARCH CORPORATIONInventors: Stephen M. Sirard, James DeYoung, Odette Turmel
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Patent number: 7981699Abstract: A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si—(R)x(OR?)y, where y?1 and x+y=4, and wherein R is an alkyl or aryl group and R? is an alkyl or aryl group and a second repair agent represented as Si—(R)x(OR?)yR?, where y?1 and x+y=3, and wherein R is an alkyl or aryl group and R? is an alkyl or aryl group, and R? is of a group that reduces interfacial surface tension between a wet clean chemical and the low-k dielectric. Some of the first repair agent and second repair agent are bonded to the low-k dielectric to form a monolayer of the first repair agent and the second repair agent.Type: GrantFiled: October 22, 2009Date of Patent: July 19, 2011Assignee: Lam Research CorporationInventors: Stephen M. Sirard, James DeYoung, Odette Turmel
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Publication number: 20110097821Abstract: A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si—(R)x(OR?)y, where y?1 and x+y=4, and wherein R is an alkyl or aryl group and R? is an alkyl or aryl group and a second repair agent represented as Si—(R)x(OR?)yR?, where y?1 and x+y=3, and wherein R is an alkyl or aryl group and R? is an alkyl or aryl group, and R? is of a group that reduces interfacial surface tension between a wet clean chemical and the low-k dielectric. Some of the first repair agent and second repair agent are bonded to the low-k dielectric to form a monolayer of the first repair agent and the second repair agent.Type: ApplicationFiled: October 22, 2009Publication date: April 28, 2011Applicant: LAM RESEARCH CORPORATIONInventors: Stephen M. Sirard, James DeYoung, Odette Turmel
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Patent number: 7534363Abstract: A method for removing organic material over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to an outer zone of the plasma processing chamber, wherein the outer zone surrounds the inner zone and the second gas has a carbon containing component, wherein a concentration of the carbon containing component of the second gas is greater than a concentration of the carbon containing component in the first gas. Plasmas are simultaneously generated from the first gas and second gas. Some or all of the organic material is removed using the generated plasmas.Type: GrantFiled: June 25, 2004Date of Patent: May 19, 2009Assignee: Lam Research CorporationInventors: Rao V. Annapragada, Odette Turmel, Kenji Takeshita, Lily Zheng, Thomas S. Choi, David R. Pirkle
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Patent number: 7521362Abstract: A method in a plasma processing system for etching a feature through a dielectric layer of a dual damascene stack on a semiconductor substrate is disclosed. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method further includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the dielectric layer. The method additionally includes striking a plasma from the etchant source gas. The method also includes etching the feature through the dielectric layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 27 MHz and about 90 MHz. The bias RF signal further has a bias RF power component that is configured to cause the feature to be etched in accordance to predefined etch rate parameters and etch profile parameters at the bias RF frequency.Type: GrantFiled: December 23, 2003Date of Patent: April 21, 2009Assignee: LAM Research CorporationInventors: Kenji Takeshita, Odette Turmel, Felix Kozakevich, Eric Hudson
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Publication number: 20080113516Abstract: A method in a plasma processing system for etching a feature through a given layer on a semiconductor substrate. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method also includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the given layer. The method additionally includes striking a plasma from the etchant source gas. Furthermore, the method includes etching the feature at least partially through the given layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 45 MHz and about 75 MHz. The bias RF signal further has a bias RF power component that is configured to cause the etch feature to be etched with an etch selectivity to a second layer of the substrate that is higher than a predefined selectivity threshold.Type: ApplicationFiled: January 4, 2008Publication date: May 15, 2008Inventors: Kenji Takeshita, Odette Turmel, Felix Kozakevich, Eric Hudson
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Publication number: 20060121729Abstract: A method in a plasma processing system for etching a feature through a dielectric layer of a dual damascene stack on a semiconductor substrate is disclosed. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method further includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the dielectric layer. The method additionally includes striking a plasma from the etchant source gas. The method also includes etching the feature through the dielectric layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 27 MHz and about 90 MHz. The bias RF signal further has a bias RF power component that is configured to cause the feature to be etched in accordance to predefined etch rate parameters and etch profile parameters at the bias RF frequency.Type: ApplicationFiled: December 23, 2003Publication date: June 8, 2006Inventors: Kenji Takeshita, Odette Turmel, Felix Kozakevich, Eric Hudson
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Publication number: 20050006346Abstract: A method for removing organic material over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to an outer zone of the plasma processing chamber, wherein the outer zone surrounds the inner zone and the second gas has a carbon containing component, wherein a concentration of the carbon containing component of the second gas is greater than a concentration of the carbon containing component in the first gas. Plasmas are simultaneously generated from the first gas and second gas. Some or all of the organic material is removed using the generated plasmas.Type: ApplicationFiled: June 25, 2004Publication date: January 13, 2005Inventors: Rao Annapragada, Odette Turmel, Kenji Takeshita, Lily Zheng, Thomas Choi, David Pirkle